• Title/Summary/Keyword: High-Bridge IGBT

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High Efficiency DC/DC converter using MOSFET and IGBT (MOSFET와 IGBT를 이용한 DC/DC 컨버터의 효율 증대)

  • Kwon H.N.;Jeon Y.S.;Ban H.S.;Choe G.H.;Bae J.H.
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.520-524
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    • 2001
  • Recently, the demand of large capacity SMPS for industrial area is increasing. Full-bridge dc-dc converter with IGBT is most widely used for large capacity SMPS because IGBT has a low-conduction loss and large current capacity, But most large capacity Full-bridge do-dc converter using IGBT has low operating frequency because of switching loss at IGBT especially at turn-off by current tail and it's cause of relatively big converter size. MOSFET has low switching losses has been widely used for high frequency SMPS but it has a problem to apply to large capacity SMPS because it has large conduction resistance causing large on-time losses. In this paper, for reduction losses at switching device, MOSFET is applied at parallel with IGBT in full-bridge dc/dc converter.

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High Efficiency DC-DC Converter Using IGBT-MOSFET Parallel Swit (IGBT-MOSFET 병렬 스위치를 이용한 고효율 직류-직류 변환기)

  • 장동렬;서영민;홍순찬;윤덕용;황용하
    • Proceedings of the KIPE Conference
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    • 1998.07a
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    • pp.460-465
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    • 1998
  • Due to high power ratings and low conduction loss, the IGBT has become more attractive in switching power supplies. However, its turn-on and turn-off characteristics cause severe switching loss and switching frequency limitation. This paper proposes 2.4kW, 48V, high efficiency half-bridge DC-DC converter using paralleled IGBT-MOSFET switch concept, where each of IGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by using the linearized model and the opteration of the converter are investigated by simulation results.

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High Repetitive Pulsed Power Supply Based on Semi-Conductor Switches (반도체 스위치 기반 고반복 펄스전원)

  • Jang, S.R.;Ahn, S.H.;Ryoo, H.J.;Kim, J.S.;Rim, G.H.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1023_1024
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    • 2009
  • In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

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High power gate driver design using 555 timer and photo coupler for electronic/hybrid car and electroplating rectifier (전기/하이브리드 자동차, 도금용 정류기 등에 적용이 가능한 555 timer와 Photo Coupler를 이용한 대용량 SCR/IGBT용 Gate Driver 설계)

  • Cho, Eun Seok;Ko, Jae Su;Lee, Yong Keun
    • Korea Science and Art Forum
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    • v.20
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    • pp.421-428
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    • 2015
  • Electronic/hybrid car and electroplating rectifier should have switching devices such as SCR, MOSFET, IGBT. And those switching devices should be operated by gate driver. In this paper, we propose high power gate driver that contains H-Bridge using 4 BJTs. H-Bridge and transformer generate isolate power. And gate control signal is transferred to isolated one by photo coupler and operate real switching device. We designed H-Bridge and 555-Timer by PSpice simulation and manufactured real product. Finally we succeed to operate 27V 50,000A electroplating rectifier using proposed gate driver.

A High Efficiency DC-DC Converter Using IGBT-MOSFET Parallel Switches (IGBT-MOSFET 병렬 스위치를 이용한 고효율 직류-직류 변환기)

  • 장동렬;서영민;홍순찬;윤덕용;황용하
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.2
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    • pp.152-158
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    • 1999
  • Due to high power ratings and low conduction loss, the TGBT has become more attractive in switching power supplies. However, its lower turn-on and turn-off characteristics than those of MOSFET cause severe switching loss and s switching frequency limitation. This paper proposes 2.4kW. 48V. high efficiency half-bridge DC-DC converter using p paralleled TGBT-MOSFET switch concept to use the merits of TGBTs and MOSFETs. Tn parallel switches. each of I TGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by l linearized modelling and the operation of the converter are investigated by simulation results.

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An Inherent Zero-Voltage and Zero-Current-Switching Full-Bridge Converter with No Additional Auxiliary Circuits

  • Wang, Jianhua;Ji, Baojian;Wang, Hongbo;Chen, Naifu;You, Jun
    • Journal of Power Electronics
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    • v.15 no.3
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    • pp.610-620
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    • 2015
  • An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

SOFT SWITCHING AND LOSS ANALYSIS OF A HALF-BRIDGE DC-DC CONVERTER WITH IGBT-MOSFET PARALLEL SWITCHES

  • Hong, Soon-Chan;Seo, Young-Min;Jang, Dong-Ryul;Yoon, Duck-Yong;Hwang, Yong-Ha
    • Proceedings of the KIPE Conference
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    • 1998.10a
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    • pp.713-718
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    • 1998
  • Due to high power ratings and low conduction loss, the IGBT has become more attractive in high power applications. However, its slower characteristics than those of MOSFET cause severe switching losses and switching frequency limitation. This paper proposes the IGBT's soft switching concept with the help of MOSFET, where each of the IGBT and MOSFET plays its role during on-periods and switching instants. Also, the switching losses are analyzed by using the linearized modeling and the modeling and the operations of a converter are investigated to confirm the soft switching of IGBT's.

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The Study on Parallel operation of IGBT for the Medium SE the Large capacity Inverter ($\cdot$ 대용량 인버터용 IGBT 병렬 운전 연구)

  • Park G.T.;Yoon J.H.;Jung M.K.;Kim D.S.
    • Proceedings of the KIPE Conference
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    • 2003.07a
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    • pp.430-433
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    • 2003
  • IGBTS are widely used for the industrial inverters in the mid power range at low voltage (440V$\~$660V) application. Advantageous features of the device are simple gate drive and high speed switching capability. Due to these advantages the application of IGBTS is enlarging into the high power application. However, to increase the power handling capacity at lower input voltage level, the current rating in each bridge arm must be enlarged. Therefore the parallel operation of IGBT devices is essentially needed. This paper describes the feasible parallel structures of the power circuit for the mid & the high power inverters and introduces the important design condition for the parallel operation of IGBT devices. To verify feasibility of the IGBT parallel operation, the feature of several IGBT devices (EUPEC, SEMIKRON's IGBT) are investigated and the power stacks are implemented and tested with these devices. The experimental results show the good characteristics for the parallel operation of IGBTS.

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A Study on AC/DC Full Bridge Converter With Single Stage Circuit (단일전력단으로 구성된 AC/DC 풀 브리지 컨버터에 관한 연구)

  • Ahn, Byung-Moo;Kim, Yong;Kim, Pil-Soo;Lim, Nam-Hyuk;Chang, Sung-Won
    • Proceedings of the KIEE Conference
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    • 2000.07b
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    • pp.1296-1299
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    • 2000
  • A single stage AC/DC converter based on a full bridge topology suitable for high frequency soft switching converter applications is proposed. The proposed converter has high power factor, zero voltage switching, low noise and high efficiency. A pulse width modulation control is employed to reduce the switching and rectification losses respectively. This proposal converter has simple structure and low cost, The modelling and detailed analysis are performed to derive the design equations, a prototype converter has been designed and experimented. The new converter is attractive for high-voltage, high-power applications where IGBT's are predominantly used as the power switches. The principle of operation, features, and design are verified on a 1.5kW, 30kHz, IGBT based experimental circuit.

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A Study on the Development of a Power Supply for Driving Magnetron (마그네트론 구동용 전원장치 설계에 관한 연구)

  • 김일권;한주섭;조성훈;이성근;길경석
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.744-748
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    • 2002
  • This paper describes a power supply of a CW magnetron for driving a electrodeless plasma lamp. The proposed power supply consists of a power factor controller, a series resonant ZVS half bridge inverter, a high voltage leakage transformer, and two IGBT drives. From the simulation results, it was confirmed that the proposed circuits can control the input power of the magnetron up to 33.3[%] linearly by adjust driving frequency of the inverter.

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