Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)

The Korean Institute of Power Electronics (전력전자학회)
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High Efficiency DC-DC Converter Using IGBT-MOSFET Parallel Swit

IGBT-MOSFET 병렬 스위치를 이용한 고효율 직류-직류 변환기

  • 장동렬 (단국대학교 전기공학과) ;
  • 서영민 (단국대학교 전기공학과) ;
  • 홍순찬 (단국대학교 전기공학과) ;
  • 윤덕용 (천안공업전문대학 제어계측과) ;
  • 황용하 (이화전기공업(주))
  • Published : 1998.07.01
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Abstract

Due to high power ratings and low conduction loss, the IGBT has become more attractive in switching power supplies. However, its turn-on and turn-off characteristics cause severe switching loss and switching frequency limitation. This paper proposes 2.4kW, 48V, high efficiency half-bridge DC-DC converter using paralleled IGBT-MOSFET switch concept, where each of IGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by using the linearized model and the opteration of the converter are investigated by simulation results.

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