• 제목/요약/키워드: High voltage gain

검색결과 468건 처리시간 0.036초

A Bidirectional Three-level DC-DC Converter with a Wide Voltage Conversion Range for Hybrid Energy Source Electric Vehicles

  • Wang, Ping;Zhao, Chendong;Zhang, Yun;Li, Jing;Gao, Yongping
    • Journal of Power Electronics
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    • 제17권2호
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    • pp.334-345
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    • 2017
  • In order to meet the increasing needs of the hybrid energy source system for electric vehicles, which demand bidirectional power flow capability with a wide-voltage-conversion range, a bidirectional three-level DC-DC converter and some control strategies for hybrid energy source electric vehicles are proposed. The proposed topology is synthesized from Buck and Boost three-level DC-DC topologies with a high voltage-gain and non-extreme duty cycles, and the bidirectional operation principle is analyzed. In addition, the inductor current ripple can be effectively reduced within the permitted duty cycle range by the coordinated control between the current fluctuation reduction and the non-extreme duty cycles. Furthermore, benefitting from duty cycle disturbance control, series-connected capacitor voltages can also be well balanced, even with the discrepant rise and fall time of power switches and the somewhat unequal capacitances of series-connected capacitors. Finally, experiment results of the bidirectional operations are given to verify the validity and feasibility of the proposed converter and control strategies. It is shown to be suitable for hybrid energy source electric vehicles.

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

  • Lee, Jong-Lam;Kim, Hae-Cheon;Mun, Jae-Kyung;Kwon, Oh-Seung;Lee, Jae-Jin;Hwang, In-Duk;Park, Hyung-Moo
    • ETRI Journal
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    • 제16권4호
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    • pp.1-11
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    • 1995
  • A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

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세라믹 적층공정을 이용한 강압용 압전변압기의 제작 및 특성 (Fabrication and Properties of Piezoelectric Transformer for Step-Down Voltage using Ceramic Stack Process)

  • 이창배;윤중락
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.164-164
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    • 2009
  • A multilayer piezoelectric transformer(MPT) for step-down voltage was made by ceramic stack process. And then, the characteristics of piezoelectric transformer, such as resonance frequency, matching impedance, electro-mechanical coupling coefficient, voltage gain, heat generation and efficiency, are analyzed. The piezoelectric transformer consists of a lead zirconate titanate ceramic with a high electromechanical quality factor. The piezoelectric transformer, with a multilayered construction in the thickness direction, was formed with dimensions 15mm long, 15mm wide and 5mm thick.

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Electrical Applications of OTFTs

  • Kim, Seong-Hyun;Koo, Jae-Bon;Lim, Sang-Chul;Ku, Chan-Hoi;Lee, Jung-Hun;Zyung, Tae-Hyoung
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.170-170
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    • 2006
  • [ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

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교번으로 영전압 스위칭 되는 다중공진형 컨버터 토폴로지 (Alternately Zero Voltage Switched Multi Resonant Converter Topology)

  • 김창선;박효식;오용승;김희준
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2002년도 전력전자학술대회 논문집
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    • pp.360-363
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    • 2002
  • In the resonant converters which can provide high efficiency and high power density, the resonant voltage stress is about $4\~5$ times the input voltage. It needs the power switch with high ratings. This is a reason why the conduction loss is increased. In this paper, it proposes the alternately zero voltage switched forward, flyback multi resonant converter topology for reducing the voltage stress using alternately zero voltage switching technique. And the proposed AT forward MRC Is experimentally considered about the loop gain with HP4194A network analyzer

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고속 동작을 위한 디지털 자동 이득 제어기 설계 (Design of Digital Automatic Gain Controller for the High-speed Processing)

  • 이봉근;이영호;강봉순
    • 융합신호처리학회논문지
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    • 제2권4호
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    • pp.71-76
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    • 2001
  • 본 논문에서는 5GHz 대역을 사용하는 고속 무선 LAN의 표준안의 IEEE 802.11a-1999 를 위한 디지털 자동 이득 제어기를 제언한다. 송수신간의 동기화를 위한 신호인 training symbol을 이용하여 수신기에 입력되는 신호의 이득을 측정한다. 측정된 이득을 이상적인 이득과 비교하여 갱신할 이득을 구한다. 갱신 이득은 신호를 증폭하는 GCA(Gain Controlled Amplifer)의 입력 전압으로 변환되어 신호의 증폭도를 제어하게 된다. 본 논문에서는 하드웨어 부담을 줄이기 위해 부분 선형 근사방법을 이용하여 갱신 이득을 본 논문에서 제안한 디지털 자동 이득 제어기는 VHDL을 이용하여 설계하였으며, Xilinx cAD tool을 이용하여 timing verification을 수행하였다.

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절연재에 따른 TEM 안테나의 방사패턴 및 이득 변화 (The Antenna Radiating Pattern and Gain's changes according to Insulating Material)

  • 이예나;최순호;허창수;최진수;박우철
    • 전기학회논문지
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    • 제63권5호
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    • pp.666-670
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    • 2014
  • TEM Horn antenna is typically used in HPEM area. It is necessary to apply a high voltage of the antenna for radiating HPEM. Then, it is necessary to insulate essentially of applying a high voltage to the antenna. At this time, radiation pattern and gain of the TEM Antenna is changed. For this reason, it is necessary to analyze changing characteristics by using simulation. In this paper, I analyzed the radiation pattern of the antenna in accordance with the lens and insulating material. As a result, it was observed that the value of the gain is changed in accordance with the frequency. The lens is used for the antenna, the gain characteristic is improved.

교번으로 영전압 스위칭 되는 포워드, 플라이백 다중공진형 컨버터의 제어기 (Alternately Zero Voltage Switched Forward, Flyback Multi-Resonant Converter Controller)

  • 김창선
    • 조명전기설비학회논문지
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    • 제16권5호
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    • pp.7-13
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    • 2002
  • 고효율 고전력 밀도를 제공하는 공진형 컨버터에 있어서 스위치에 걸리는 전압 스트레스는 입력전압의 4∼5배 정도여서, 높은 정격의 소자를 필요로 하기 때문에 전도손실을 증가시킨다. 본 논문에서는 이러한 문제점을 해결하기 위해 제안했던 교번으로 동작하는 포워드 다중공진형 컨버터에 적용한 회로 형태를 다른 컨버터에 적용한 예를 제시하였다. 그리고 제안한 AT포워드 다중공진형 컨버터의 루프 이득 특성을 알아보기 위해 HP4194A 네트워크 해석기를 이용해 실험적으로 측정한 결과에 대해 고찰하였다.

A Wide Voltage-Gain Range Asymmetric H-Bridge Bidirectional DC-DC Converter with a Common Ground for Energy Storage Systems

  • Zhang, Yun;Gao, Yongping;Li, Jing;Sumner, Mark
    • Journal of Power Electronics
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    • 제18권2호
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    • pp.343-355
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    • 2018
  • A wide-voltage-conversion range bidirectional DC-DC converter is proposed in this paper. The topology is comprised of one typical LC energy storage component and a special common grounded asymmetric H-bridge with four active power switches/anti-parallel diodes. The narrow output PWM voltage is generated from the voltage difference between two normal (wider) output PWM voltages from the asymmetric H-bridge with duty cycles close to 0.5. The equivalent switching frequency of the output PWM voltage is double the actual switching frequency, and a wide step-down/step-up ratio range is achieved. A 300W prototype has been constructed to validate the feasibility and effectiveness of the proposed bidirectional converter between the variable low voltage side (24V~48V) and the constant high voltage side (200V). The slave active power switches allow ZVS turn-on and turn-off without requiring any extra hardware. The maximum conversion efficiency is 94.7% in the step-down mode and 93.5% in the step-up mode. Therefore, the proposed bidirectional topology with a common ground is suitable for energy storage systems such as renewable power generation systems and electric vehicles with a hybrid energy source.

A 915-MHz RF CMOS Low Power High Gain Amplifier using Q-enhancement Technique for WPAN

  • Han, Dong-Ok;Kim, Eung-Ju;Park, Tah-Joon
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.501-502
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    • 2006
  • In this paper low power high gain amplifier is suitable for application in low power systems was designed and fabricated. The amplifier used both subthreshold bias for low power and positive feedback Q-enhancement technique for high gain. The amplifier used TSCM $0.18{\mu}m$ RF CMOS technology measures a power gain of 32.3dB, a quality factor of 366 and a power consumption of 3mW in a supply voltage of 1.8V.

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