• Title/Summary/Keyword: High voltage gain

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An internal multi-band antenna for mobile handset using two slots (두 개의 슬롯을 이용한 단말기용 다중대역 내장형 안테나)

  • Ahn, Sang-Kwon;Choi, Sunho;Kwak, Kyung-Sup
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.13 no.1
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    • pp.61-66
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    • 2014
  • This paper describes the design, fabrication, and measurement of a compact hexa-band coupling antenna for 4G mobile handset using a small element with two slots. In order to obtain sufficient bandwidth (LTE700, GSM850, GSM900, GSM1800, GSM1900, UMTS) with a Voltage Standing Wave Ratio $(VSWR){\leq}3:1$, two slots are inserted in the small element, and coupling patch is used. The measured result of the fabricated antenna provides 410MHz bandwidth form 0.688 to 1.098GHz and 643 MHz bandwidth form 1.607 to 2.250GHz (${\leq}VSWR 3:1$) with the gain ranging from -0.52 to 4.68 dBi. Also, a good radiation pattern is achieved within the hexa-band (0.698-0.960GHz and 1.710-2.170GHz) range.

Design of Programmable SC Filter (프로그램 가능한 SC Filter의 설계)

  • 이병수;이종악
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.11 no.3
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    • pp.172-178
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    • 1986
  • The recent interest in the design of filters is motivatied by the fact that such filter can be fully integrated using standard metal-oxide-semiconductor processing technology. This is due to replacing all the resistors in the active RC filter network by the switched capacitors. The voltage gain of a SC filter depends only on the rations of capacitance and these ratios can be obtained and maintained to high accuracy. Therefore, it is known that a switched capacitor is much better than a resistor in temperature and linearity characteristics. This paper proposed a programmable SC filter and proved the fact that ${omega}_0$ Q and G of this circuit can be controlled by digital signal. Experiments show that SC filter remains the low sensitivities but it can't avoid little influence of parasitic capacitance. As the transfer characteristic of the SC filter is varied with sampling frequency and resistor array, SC filtering technigue can be applied for digital processing, speech analysis and synthesis and so on.

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A 5-Gb/s CMOS Optical Receiver with Regulated-Cascode Input Stage for 1.2V Supply (1.2V 전원전압용 RGC 입력단을 갖는 5-Gb/s CMOS 광 수신기)

  • Tak, Ji-Young;Kim, Hye-Won;Shin, Ji-Hye;Lee, Jin-Ju;Park, Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.3
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    • pp.15-20
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    • 2012
  • This paper presents a 5-Gb/s optical receiver circuit realized in a $0.13-{\mu}m$ CMOS technologies for the applications of high-speed digital interface. Exploiting modified RGC input stage at the front-end transimpedance amplifier, interleaving active feedback and source degeneration techniques at the limiting amplifier, the proposed optical receiver chip demonstrates the measured results of $72-dB{\Omega}$ transimpedance gain, 4.7-GHz bandwidth, and $400-mV_{pp}$differential output voltage swings up to the data rate of 5-Gb/s. Also, the chip dissipates 66mW in total from a single 1.2-V supply, and occupies the area of $1.6{\times}0.8mm^2$.

A Design of Ultra-sonic Range Meter Front-end IC (초음파 거리 측정회로용 프론트-엔드 IC의 설계)

  • Lee, Jun-Sung
    • 전자공학회논문지 IE
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    • v.47 no.4
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    • pp.1-9
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    • 2010
  • This paper describes a ultrasonic signal processing front-end IC for distance range meter and body detector. The burst shaped ultrasonic signal is generated by a self oscillator and its frequency range is about 40[kHz]-300[kHz]. The generated ultrasonic signal transmit through piezo resonator. The another piezo device transduce from received ultrasonic signal to electrical signals. This front-end IC contained low noise amplifier, band pass filter, busrt detector and time pulse generator and so on. This IC has two type of new idea for improve function and performance, which are self frequency control (SFC) and Variable Gain Control amplifier (VGC) scheme. The dimensions and number of external parts are minimized in order to get a smaller hardware size. This device has been fabricated in a O.6[um] double poly, double metal 40[V] High Voltage CMOS process.

Phase Control Loop Design based on Second Order PLL Loop Filter for Solid Type High Q-factor Resonant Gyroscope (고체형 정밀 공진 자이로스코프를 위한 이차 PLL 루프필터 기반 위상제어루프 설계)

  • Park, Sang-Jun;Yong, Ki-Ryeok;Lee, Young-Jae;Sung, Sang-Kyung
    • Journal of Institute of Control, Robotics and Systems
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    • v.18 no.6
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    • pp.546-554
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    • 2012
  • This paper suggests a design method of an improved phase control loop for tracking resonant frequency of solid type precision resonant gyroscope. In general, a low cost MEMS gyroscope adapts the automatic gain control loops by taking a velocity feedback configuration. This control technique for controlling the resonance amplitude shows a stable performance. But in terms of resonant frequency tracking, this technique shows an unreliable performance due to phase errors because the AGC method cannot provide an active phase control capability. For the resonance control loop design of a solid type precision resonant gyroscope, this paper presents a phase domain control loop based on linear PLL (Phase Locked Loop). In particular, phase control loop is exploited using a higher order PLL loop filter by extending the first order active PI (Proportion-Integral) filter. For the verification of the proposed loop design, a hemispherical resonant gyroscope is considered. Numerical simulation result demonstrates that the control loop shows a robust performance against initial resonant frequency gap between resonator and voltage control oscillator. Also it is verified that the designed loop achieves a stable oscillation even under the initial frequency gap condition of about 25 Hz, which amounts to about 1% of the natural frequency of a conventional resonant gyroscope.

Wide-Band 6~10 GHz InGaAs 0.15μm pHEMT 27 dBm Power Amplifier (광대역 응용을 위한 6~10 GHz InGaAs 0.15μm pHEMT 27 dBm급 전력증폭기)

  • Ahn, Hyun-Jun;Sim, Sang-Hoon;Park, Myung-Cheol;Kim, Seung-Min;Park, Bok-Ju;Eo, Yun-Seong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.10
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    • pp.766-772
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    • 2018
  • A 6~10 GHz wide-band power amplifier was designed using an InGaAs enhancement-mode(E-mode) $0.15{\mu}m$ pseudomorphic high-electron-mobility transistor(pHEMT). The positive gate bias of the E-mode pHEMT device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic(3D EM) simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 dB, 8 dB, 27 dBm, and 35 %, respectively, in the 6~10 GHz band.

A Study on the Appropriate Selection of a Power System Stabilizer and Power Converters for HVDC Linked System (HVDC 연계 시스템의 전력계통 안정화 장치와 전력변환기의 적정 파라메터 선정에 관한 연구)

  • 김경철;문병희
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.2
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    • pp.45-53
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    • 2002
  • This paper presents an algorithm for the appropriate parameter selection of a power system stabilizer and power converters in two-area power systems with a series HVDC links. The method for PSS is one of the classical techniques by allocating properly poly-zero positions to fit as closely as desired the ideal phase lead and by changing the gain to produce a necessary damping torque. Proper parameter of power converters are obtained in order to have sufficient speed and stability margin to cope with changing reference values and disturbances based on the Root-locus technique. The small signal and transient stability studies using the PSS and power converters parameters obtained from these methods show that a natural oscillation frequency of the study case system is adequately damped. The simulation used in the paper was performed by the Power System Toolbox software program based on MATLAB.

A 5.8GHz SiGe Down-Conversion Mixer with On-Chip Active Batons for DSRC Receiver (DSRC수신기를 위한 능동발룬 내장형 5.8GHz SiGe 하향믹서 설계 및 제작)

  • 이상흥;이자열;이승윤;박찬우;강진영
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.4A
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    • pp.415-422
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    • 2004
  • DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system was designed and fabricated using 0.8 ${\mu}{\textrm}{m}$ SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits, and If output balun circuit were all integrated on chip. The chip size of fabricated mixer was 1.9 mm${\times}$1.3 mm and the measured performance was 7.5 ㏈ conversion gain, -2.5 ㏈m input IP3, 46 ㏈ LO to RF isolation, 56 ㏈ LO to IF isolation, current consumption of 21 mA for 3.0 V supply voltage.

A 5.8 GHz SiGe Up-Conversion Mixer with On-Chip Active Baluns for DSRC Transmitter (DSRC 송신기를 위한 능동발룬 내장형 5.8 GHz SiGe 상향믹서 설계 및 제작)

  • Lee Sang heung;Lee Ja yol;Kim Sang hoon;Bae Hyun cheol;Kang Jin yeong;Kim Bo woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.4A
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    • pp.350-357
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    • 2005
  • DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz up-conversion mixer for DSRC communication system was designed and fabricated using 0.8 m SiGe HBT process technology and IF/LO/RF matching circuits, IF/LO input balun circuits, and RP output balun circuit were all integrated on chip. The chip size of fabricated mixer was $2.7mm\times1.6mm$ and the measured performance was 3.5 dB conversion gain, -12.5 dBm output IP3, 42 dB LO to If isolation, 38 dB LO to RF isolation, current consumption of 29 mA for 3.0 V supply voltage.

Detection Technique of Partial Discharge by a Capacitive Probe in Cast-resin Transformers (몰드변압기에서 용량성 프로브에 의한 부분방전 검출 기술)

  • Jung, Kwang-Seok;Park, Dae-Won;Cha, Hyeon-Kyu;Cha, Sang-Wook;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.319-324
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    • 2011
  • This paper dealt with a partial discharge (PD) detection method for insulation diagnosis in cast-resin transformers. To detect PD pulse, a planar-capacitive probe was designed and fabricated. The probe has no insulation problem and can be installed on cast-resin transformers even in operation since it does not connect with high voltage conductor. The PD measurement system consists of the capacitive probe, a coupling network of 100 [kHz] low-cutoff frequency, and an amplifier with a gain of 40 [dB] and a frequency bandwidth of 500 [Hz]~45 [MHz]. A plane-needle and a plane-plane electrode system were fabricated to simulate insulation defects in a cast-resin transformer. Sensitivity of the PD measurement system, which is evaluated by a standard calibrator was 0.35 [mV/pC] for positive and 0.45 [mV/pC] for negative, respectively. The PD detection by the capacitive probe was less sensitive than that by a coupling capacitor according to IEC 60270, but we could analyze the magnitude and the phase distribution of PD pulse.