• 대한방사선기술학회지:방사선기술과학
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• 제14권2호
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• pp.15-21
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• 1991

Experiment was conducted on the image quality and exposure dose following replacement of $CaWO_4$ system screen BH-III and BX-III which have so far been used for high-voltage hard-radiation quality radiography, with rare earth system screen KO750, combined with high contrast film SRH, while additional filter was altered, Cu 0.8 mm+Al 1.4 mm(HVL : Al 8.8 mm), Cu 1.3 mm+Al 1.0 mm(HVL : Al 10.6 mm) and Cu 1.8 mm+Al 1.5 mm(HVL : Al 11.4 mm). AS a result, visual evaluation did not detect extreme changes in image quality under the respective condition(HVL : $Al\;8.8\;mm{\sim}Al\;11.4\;mm$). It was noted, however, that surface exposure dose declined with an increase in the thickness of the additional filter, as it was $18.9\;{\mu}Gy$ at HVL Al 8.8 mm, $17.5\;{\mu}Gy$ at Al 10.6 mm and $15.7\;{\mu}Gy$ at Al 11.4 mm. Considering the limited rating of X-ray equipment and wear of machinery, however, the range of $Cu\;1.3\;mm{\sim}1.8\;mm+Al\;1.0\;mm{\sim}1.5\;mm(1/16\;VL{\sim}1/32\;VL)$ seemed to be a limit.

• 한국항공우주학회지
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• 제35권4호
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• pp.363-368
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• 2007

높은 중량에너지밀도로 배터리 무게를 줄일 수 있는 장점을 갖는 리튬이온 배터리는 중량이 중요한 관심사인 많은 항공우주 응용분야에서 빠른 속도로 Ni-Cd, Ni-H2 등의 기존 배터리를 대체하고 있다. 또한 리튬이온 배터리는 낮은 열 손실 특성과 높은 에너지 효율 그리고 저렴한 셀 단가를 갖는다. 80개의 소니 US18650 리튬이온 셀을 사용한 KSLV-I 탑재배터리 모듈은 셀을 8개씩 직렬로 구성한 후 각 열을 병렬로 10개 연결하여 요구되는 전압과 용량을 공급한다. 본 논문에서는 우주발사체용 리튬이온 배터리의 설계 및 그 특성에 대해 소개하며, 예상되는 우주환경에서 배터리가 신뢰성 있게 동작하는지를 검증하는 환경시험 프로그램 절차를 보였다. 배터리 성능은 전자부하기를 이용한 시뮬레이션 시험을 통해 확인하였고 발사체 2단에 장착하여 각 전장품들과의 연계시험을 통해 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 센서학회지
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• 제7권3호
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• pp.163-170
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• 1998

플라즈마 이온온도를 측정하기 위해 정전평판형 이온에너지 분석기를 설계 제작하고 에너지 교정 및 에너지 분해능 등의 특성을 조사하였다. 일정한 검출기 위치에서 이온의 에너지에 따른 편향평판전압은 선형성을 보였으며, $53{\sim}103mm$ 사이의 검출기 위치에서 이온에너지에 대한 최대편향평판전압의 기울기는 $1.61{\sim}0.92$로 검출기위치의 증가에 따라 선형적으로 감소하였다. 본 실험 영역에서 에너지 분해능은 약 $4.16{\sim}11.60%$였으며, 검출기 위치 및 이온에너지의 증가에 따라 향상되었다. 상대적 검출효율은 검출기 위치의 증가에 따라 감소하였다. 제작된 분석기를 다목적 플라즈마 발생장치에 설치하여 DC 플라즈마의 이온에너지 스펙트럼을 측정하였다. 방전전압이 320V, 전류가 0.17A인 DC 플라즈마의 이온온도는 $203{\sim}205eV$로 나타났으며 검출기의 위치에 따른 이온온도의 변화는 없었다. 검출기의 위치에 따른 에너지 분해능은 $18{\sim}21%$로 검출기 위치가 증가할수록 향상되었다.

• 한국통신학회논문지
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• 제29권1A호
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• pp.93-98
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• 2004

직렬 ATA(Advanced Technology Attachment) 인터페이스는 비교적 저렴하고 성능이 우수하며. 현재 고속의 데이터 전송과 처리량을 요구하는 수요에 적합한 기술이다. 본 논문에서는 직렬 ATA의 링크층에서 오류 감지와 직류 balance를 위한 동작 주파수 150MHz에서의 Bb/10b 인코더 및 디코더의 설계 및 구현 방법과 제작된 칩의 테스트를 위한 테스트 보드 및 테스트 방법을 제시하였다. 제안된 인코더 및 디코더는 각각 5b/6b 과 3b/4b으로 나뉘어서 인코딩 되도록 설계하였으며, Top-Down 설계 방식을 사용하여 Verilog HDL로 기술하고. Synopsys로 합성된 넷리스트로 게이트 수준의 동작을 확인하였다 제작된 칩은 삼성 $0.35{\mu}m$ CMOS 표준 셀 라이브러리를 이용하였고. 칩 면적은 1.5mm * 1.5mm 이며. 전원 전압은 3.3V를 사용하였다. 테스트 보드 및 FPGA를 통하여 생성된 입력 테스트 벡터를 이용하여 100MHz로 정상 동작 검증을 테스트하였고, ATS2 테스트 장비를 이용하여 100MHz 동작 검증을 하였다. 본 논문에서 제안된 Bb/10b 인코더 및 디코더 블록은 고속의 데이터 통신을 위한 IP로써 활용 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• 전기학회논문지
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• 제67권3호
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• pp.413-418
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• 2018

In this paper, we describe the development of a non-enzymatic glucose sensor based on copper nanocubes(Cu NCs) electroplated laser induced graphene(LIG) electrodes which can detect a certain range of glucose concentrations. $CO_2$ laser equipment was used to form LIG electrodes on the PI film. This fabrication method allows easy control of the LIG electrode size and shape. The Cu NCs were electrochemically deposited on the LIG electrodes to improve electron transfer rates and thus enhancing electrocatalytic reaction with glucose. The average sheet resistances before and after electroplating were $15.6{\Omega}/{\Box}$ and $19.6{\Omega}/{\Box}$, respectively, which confirmed that copper nanocubes were formed on the laser induced graphene electrodes. The prepared electrode was used to measure the current according to glucose concentration using an electrochemical method. The LIG electrodes with Cu NCs demonstrated a high degree of sensitivity ($1643.31{\mu}A/mM{\cdot}cm^2$), good stability with a linear response to glucose ranging from 0.05 mM to 1 mM concentration, and a limit of detection of 0.05 mM. In order to verify that these electrodes can be used as flexible devices, the electrodes were bent to $30^{\circ}$, $90^{\circ}$, and $180^{\circ}$ and cyclic voltammetry measurements were taken while the electrodes were bent. The measured data showed that the peak voltage was almost constant at 0.42 V and the signal was stable even in the flexed condition. Therefore, it is concluded that these electrodes can be used in flexible sensors for detecting glucose in the physiological sample like saliva, tear or sweat.

• 대한방사선기술학회지:방사선기술과학
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• 제8권2호
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• pp.3-9
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• 1985

From the study on the chest radiologic equipments and situations of university hospitals, general hospitals, and radiologic clinics located in Seoul area and Choong-cheong province, the author got conclusions as follows : 1. The rectfication methods of the equipments were employing mainly single or three-phase full wave, and 78% of the examined were using single phase full wave. 2. The focal sizes in case of small focus were less than 1.0mm in chest-only use, and more than 1.0mm in 81% of combined use. The focal sizes in case of large focus were more than 1.6mm in 78% of the total. 3. Maximum ratings of x-ray tubes were 47% at 125 kVp maximum tube voltage and 41% at 150kVp. The maximum tube currentes higher than 500mA were shown in 72% of all the examined. And the maximum exposure time was the range of 5-8sec. 4. Grid was not used in the 66% of all the hospitals. Equipment for chest-only was employing 10:1 grid ratio and the 2.0-2.9mmAl of total filtration formed 38% of all the examined. 5. In the processing time of exposed film, 68% of all was 90sec, and only 20% of all the examined used optimum developing temperature according to this condition. 6. In the radiographic conditions, more than 50% used low tube voltages lower than 70 kVp and only 3% of all the equipments used high tube voltages higher than 100 kVp. The 46.9% of all the equipments 300mA, and 53% of all used shorter exposure time less than 1/20(0.05) sec. 7. In the monthly average number of radiographs, 44% of all was x-ray the radiographs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• 한국도로학회논문집
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• 제19권6호
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• pp.105-115
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• 2017

PURPOSES : The occurrence of unexpected disasters, including fire events, increases as the road network becomes complicated and traffic volume increases. When a fire event occurs on and under bridges, the damage extensively influences direct damage to structures, vehicles, and human life and secondary socioeconomic issues owing to traffic blockage. This study investigated potential fire-hazard risks on bridges of the Korean national route road. METHODS : The investigation was conducted using field investigation and analysis with satellite pictures and road views from commercial websites and the Bridge Management System (BMS). From the filed investigation, various potential fire resources were identified. The satellite pictures and road views were helpful in measuring and recognizing conditions underneath bridges, stowage areas, etc. RESULTS : There are various potential fire resources underneath bridges such as piled agricultural products, parked petroleum tanks, construction equipment, and attached high-voltage cables. A total of 94.6% of bridges have underneath clearances of less than 15 m. A bridge underneath volume that can stow a potential fire hazard resource was $7,332m^3$ on average, and most bridges have about $4,000m^3$ of space. Based on the BMS data, the amounts of PSC and steel girders were 29% and 25%, respectively. CONCLUSIONS : It was found that the amount of stowed potential fire hazard resources was proportional to the underneath space of bridges. Most bridges have less than 15 m of vertical clearance that can be considered as a critical value for a bridge fire. The fire risk investigation results should be helpful for developing bridge fire-protection tools.