• Journal of the Korean Institute of Navigation
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• v.25 no.1
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• pp.53-60
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• 2001

This paper presents the fabrication of the LNA which is operating at 2.13 ~ 2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a GaAs FET keeps the low noise characteristics and drops the input reflection coefficient of a low noise amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, PldB 17 dB and less than 0.7 dB in noise figure, 1.5 in inputㆍoutput SWR(Standing Wave Ratio).

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1049-1056
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• 2017

In this paper, a microstrip-fed dual-band monopole antenna with two arc-shaped lines for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two arc-shaped lines and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters L2, L5, and with/without slit to get the optimized parameters. The proposed antenna is made of $13.0{\times}34.0{\times}1.0 mm^3$ and is fabricated on the permittivity 4.4 FR-4 substrate($12.0{\times}34.0{\times}1.0mm^3$). The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 360 MHz (2.29~2.65 GHz) and 1,245 MHz (4.705~5.95 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4 GHz band/5.0 GHz band), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.67-75
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• 2020

In this paper, by applying LCP substrate, the capacitor and inductor are implemented with a variety of value that can be used in 35 GHz circuits. Depending on how to apply it to the circuit, it is required high value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 35-GHz. By finding the limit, this paper devised classifying passive devices for the DC and the high-frequency domain. The basic structure is suitable for DC and microstrip λ/8 length stub structure can be used for high-frequency. The open and short stub structure operate as a capacitor and inductor respectively in the frequency of 35 GHz. If their impedance is known, it is possible to extract the value through the impedance-related equation. By producing with the permittivity 2.9 LCP substrate, the basic structure which are available in the DC constituted a library of capacitance of 1.12 to 13.9 pF and inductance of 0.96 to 4.69 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.07 to 2.88 pF and inductance of 0.34 to 1.27 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It is possible to integrate with the operation circuit of TRM(Transmit-Receive Module) for the frequency 35-GHz, it will be an alternative to the passive devices that can be properly utilized in the circuit.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.290-298
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• 2018

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.81-88
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• 2021

In this paper, by applying LTCC substrate, the library of the passive elements is implemented. And it can be used in 24 GHz circuits. Depending on how to use it to the circuit, it is required large value by designing the basic structures such as electrode capacitor and spiral inductor. However they are not available in high-frequency domain, because their SRF(Self-Resonant Frequency) is lower than the frequency of 24-GHz. By solving the limit, this paper devised passive elements classified for the DC and the high-frequency domain. The basic structure is suitable for low frequency under 1~2 GHz like DC. The microstrip λ/8 length stub structure is proposed to use for high-frequency like 24-GHz. The open and short stub structure operate as a capacitor and inductor respectively, also they have their impedances. Through their impedances, we can extract the value with the impedance-related equation. In this paper, the proposed passive elements are produced with the permittivity 7.5 LTCC substrate, the basic structure which are available in the DC constituted a library of capacitance of 2.35 to 30.44 pF and inductance of 0.75 to 5.45 nH, measured respectively. The stub structure available in the high-frequency domain were built libraries of capacitance of 0.44 to 2.89 pF and inductance of 0.71 to 1.56 nH, calculated respectively. The measurements have proven how to diversify value, so libraries can be built more variously. It will be an alternative to the passive elements that it is possible to integrate with the operation circuit of radar module for the frequency 24-GHz.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.1-11
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• 1999

It is now common practice to utilize the quadrature RF coils to improve the signal-to-noise ratio (SNR) in the Magnetic Resonance Imaging (MRI) System. In addition, to make such an available SNR improvement, it is mandatory to use a well-designed quadrature coupler, which facilitates a perfect 3-dB coupling and quadrature-phase shift. However, the four ports matching condition has to be well considered during the RF excitation and the signal detection period. This work investigates the effects of such a mismatching condition (especially, due to patient) from the analysis, simulation, and real implementation and firstly proposes dynamic loading technique for a quadrature coupler and transmitting/receiving switch module to minimize a patient mismatching and enhance a system reliability. Also, we designed and implemented the quadrature coupler and transmitting/receiving switch module using microstrip. As a result, the SNR of our MRI system using the microstrip quadrature coupler and transmitting/receiving switch module with dynamic load increases 3 dB compared with the old one using USA quadrature switch. Also, the power capability of quadrature coupler and transmitting/receiving switch module is 5-kw peak power. Considering power loss and reduction of size, we used a RT/duroid 6010 substrate with high permittivity and for simulation we use Compact Software.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.944-949
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• 2015

This study proposed a patch antenna with a MIMO structure which is applicable for wireless communication equipment by combining a single patch antenna with a multi port. The proposed MIMO patch antenna was designed through the TRF-45 substrate with a relative permittivity of 4.5, loss tangent equal to 0.0035 and dielectric high of 1.6 mm, and the center frequency of the antenna was 2.45 GHz in the ISM (Industrial Scientific and Medical) band. The proposed MIMO patch antenna had a 500 MHz bandwidth from 2.16 ~ 2.66 GHz and 24.1% fractional bandwidth. The return loss and VSWR were -62.05 dB, 1.01 at the ISM bandwidth of 2.45 GHz. The Wibro band of 2.3 GHz was -17.43 dB, 1.33, the WiFi band of 2.4 GHz was -31.89 dB, 1.05, and the WiMax band of 2.5 GHz was -36.47 dB, 1.03. The radiation patterns included in the bandwidth were directional, and the WiBro band of 2.3 GHzhad a gain of 4.22 dBi, the WiFi band of 2.4 GHz had a gain of 4.12 dBi, the ISM band of 2.45 GHz had a gain of 4.06dBi, and the WiMax band of 2.5 GHz had a gain of 3.9 6dBi.