• Proceeding of EDISON Challenge
• /
• 제5회(2016년)
• /
• pp.299-304
• /
• 2016

2차원 반도체 소재의 경우 물질종류마다 내포하고 있는 고유결함에 의해서 Fermi-Level Pinning 이 발생하여 이로 인한 Schottky Barrier transistor로 동작을 하게 되며, 이는 접합부에 Carrier Injection 정도와 Schottky Barrier을 통과하는 Tunneling 정도에 의해서 소자의 특성이 결정 된다. 본 연구에서는 시뮬레이션을 통하여 2차원 반도체인 $MoS_2$소자를 설계하고, S/D Doping에 따라 접촉 저항 개선 효과와 소자의 동작특성이 어떠한 영향을 미치는지 연구하여 최대 $250cm^2/V{\cdot}sec$의 field effect mobility 의 결과를 얻었다. 또한 S/D doping 에 따라 각 저항 성분의 영향을 분석하였으며 면저항 및 접촉 저항 둘 다 doping 농도가 증가함에 따라 감소하는 결과를 나타내며, S/D doping의 영향은 접촉저항에서 더 크게 나타났다. 더불어 2차원 반도체의 Resistance network model 을 제안하여 subthreshold 영역에서는 $R_{ic}$, saturation 영역에서는 $R_{ish}$ 가 전체저항에서 주요한 변수로 전체저항식에 포함되어야 한다는 것을 시뮬레이션을 통해서 검증하였다.

• Journal of Industrial and Engineering Chemistry
• /
• 제68권
• /
• pp.350-354
• /
• 2018

Lifetime study of blue phosphorescent and thermally activated delayed fluorescent organic light-emitting diodes was carried out to understand the dominant degradation process during electrical operation of the devices. Doping concentration dependence of the phosphorescent and thermally activated delayed fluorescent organic light-emitting diodes was studied, which demonstrated long lifetime at low doping concentration in the phosphorescent devices and at high doping concentration in the thermally activated delayed fluorescent devices. Detailed mechanism study of the two devices described that triplet-triplet annihilation is the main degradation process of phosphorescent organic light-emitting diodes, whereas triplet-polaron annihilation is the key degradation factor of the thermally activated delayed fluorescent devices.

• Progress in Superconductivity and Cryogenics
• /
• 제24권4호
• /
• pp.55-58
• /
• 2022

Carbon-based doping to MgB₂ superconductor is the simplest approach to enhance the critical current densities under magnetic fields. Carbon quantum dots is synthesized in this work as a carbon provider to MgB₂ superconductors. Polyvinyl Pyrrolidone is pyrolyzed and dispersed in dimethylfomamide solvent as a dopant to the mixture of Mg and B powders. Doped MgB₂ bulk samples clearly show the decrease of a-axis lattice constant, grain refinements, and broadening of FWHM of diffraction peaks compared to un-doped MgB₂ possibly due to the carbon substitution and/or boron vacancy at the boron site in MgB₂ lattice. Also, high-field J_c for the doped MgB₂ is enhanced significantly with the crossover about 3 T at 5 & 20 K when increasing the doping of carbon quantum dots.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제7권2호
• /
• pp.120-131
• /
• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.382.1-382.1
• /
• 2014

Graphene field-effect transistors (GFET) is one of candidates for future high speed electronic devices since graphene has unique electronic properties such as high Fermi velocity (vf=10^6 m/s) and carrier mobility ($15,000cm^2/V{\cdot}s$) [1]. Although the contact property between graphene and metals is a crucial element to design high performance electronic devices, it has not been clearly identified. Therefore, we need to understand characteristics of graphene/metal contact in the GFET. Recently, it is theoretically known that graphene on metal can be doped by presence of interface dipole layer induced by charge transfer [2]. It notes that doping type of graphene under metal is determined by difference of work function between graphene and metal. In this study, we present the GFET fabricated by contact metals having high work function (Pt, Ni) for p-doping and low work function (Ta, Cr) for n-doping. The results show that asymmetric conductance depends on work function of metal because the interfacial dipole is locally formed between metal electrodes and graphene. It induces p-n-p or n-p-n junction in the channel of the GFET when gate bias is applied. In addition, we confirm that charge transfer regions are differently affected by gate electric field along gate length.

• Transactions on Electrical and Electronic Materials
• /
• 제14권5호
• /
• pp.246-249
• /
• 2013

Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of $H_2$ and $CH_4$ and an ambient annealing temperature of $1,000^{\circ}C$ were used during the deposition for 30 Min., and for the transfer onto $SiO_2/Si$ and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on $SiO_2/Si$ substrate showed a low intensity of the G/2D ratio, because the polarity of the $SiO_2$ layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.

• Proceedings of the KIEE Conference
• /
• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
• /
• pp.314-316
• /
• 1997

We have studied the epitaxial growth and electrical properties of $Si_{0.8}Ge_{0.2}$, films on Si substrates at $550^{\circ}C$ by LPCVD. In a low $PH_3$, partial pressure region such as below 1.25 mPa, the phosphorus doping concentration increased proportionally with increasing $PH_3$ partial pressure while the deposition rate and the Ge fraction x were constant. In a higher $PH_3$ partial pressure region, the phosphorus doping concentration and the deposition rate decreased, while the Ge fraction slightly increased. The dependence of P incorporation rate on the $PH_3$ partial pressure was similar to the phosphorus doping concentration. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_4$ adsorption/reaction and the $GeH_4$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_4$ than on $GeH_4$. In a higher $PH_3$ partial pressure region, the deposition is largely controlled by surface coverage effect of phosphorus atoms.

• Korean Journal of Materials Research
• /
• 제18권8호
• /
• pp.450-453
• /
• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

• Korean Journal of Materials Research
• /
• 제30권8호
• /
• pp.399-405
• /
• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Mass Spectrometry Letters
• /
• 제11권4호
• /
• pp.118-124
• /
• 2020

An analytical method was developed for hypoxia-inducible factor (HIF) stabilizers based on QuEChERS (Quick, Easy, Cheap, Effective, Rugged, and Safe) sample preparation and liquid chromatography-high resolution mass spectrometry analysis. HIF stabilizers potentially enhance the performance of athletes, and hence, they have been prohibited. However, the analysis of urinary HIF stabilizers is not easy owing to their unique structure and characteristics. Hence, we developed the QuEChERS preparation technique for a complementary method and optimized the pH, volume of extraction solvent, and number of extractions. We found that double extraction with 1% of formic acid in acetonitrile provided the highest recovery of HIF stabilizers. Moreover, the composition of the mobile phase was also optimized for better separation of molidustat and IOX4. The developed method was validated in terms of its precision, detection limit, matrix effect, and recovery for ISO accreditation. To the best of our knowledge, this is the first demonstration of the application of the QuEChERS method, which is suitable as a complementary analytical method, in antidoping.