References
- R. A. Soref, Proc. IEEE, 81, 1687 (1993). https://doi.org/10.1109/5.248958
- A. Blanco, E. Chomski, S. Grabtchak, M. Ibisate, S. John, S. W. Leonard, C. Lopez, F. Meseguer, H. Miguez, J. P. Mondia, G. A. Ozin, O. Toader and H. M. von Driel, Nature, 405, 437 (2000). https://doi.org/10.1038/35013024
- S. Pearton, Nat. Mater., 3, 203 (2004). https://doi.org/10.1038/nmat1102
- X. Wang, C. J. Summers and Z. L. Wang, Nano Lett., 4, 423 (2004). https://doi.org/10.1021/nl035102c
- H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen and M. Meyyappan, Nano Lett., 4, 1247 (2004). https://doi.org/10.1021/nl049461z
- L. E. Jensen, M. T. Bjork, S. Jeppesen, A. I. Persson, B. J. Ohlsson and L. Samuelson, Nano Lett., 4, 1961 (2004). https://doi.org/10.1021/nl048825k
- A. I. Hochbaum, R. Fan, R. He and P. Yang, Nano Lett., 5, 457 (2005). https://doi.org/10.1021/nl047990x
- P. Nguyen, H. T. Ng and M. Meyyappan, Adv. Mater., 17, 549 (2005). https://doi.org/10.1002/adma.200400908
- D. S. Kim, R. Ji, H. J. Fan, F. Bertram, R. Scholz, A. Dadgar, K. Nielsch, A. Krost, J. Christen, U. Gosele and M. Zacharias, Small, 3, 76 (2007). https://doi.org/10.1002/smll.200600307
- M. C. Jeong, B. Y. Oh, M. H. Ham and J. M. Myoung, Appl. Phys. Lett., 88, 202105 (2006). https://doi.org/10.1063/1.2204655
- D. C. Kim, W. S. Han, B. H. Kong, H. K. Cho and C. H. Hong, Phys. B, 401, 386 (2007). https://doi.org/10.1016/j.physb.2007.08.194
- H. Wang, S. Baek, J. Song, J. Lee and S. Lim, Nanotechnology, 19, 075607 (2008). https://doi.org/10.1088/0957-4484/19/7/075607
- C. Xu, M. Kim, J. Chun and D. Kim, Appl. Phys. Lett., 86, 133107 (2005). https://doi.org/10.1063/1.1888035
- S. Y. Bae, C. W. Na, J. H. Kang and J. Park, J. Phys. Chem. B, 109, 2526 (2005). https://doi.org/10.1021/jp0458708
- Y. J. Li, M. Y. Lu, C. W. Wang, K. M. Li and L. J. Chen, Appl. Phys. Lett., 88, 143102 (2006). https://doi.org/10.1063/1.2191418
- S. Y. Li, P. Lin, C. Y. Lee, T. Y. Tseng and C. J. Huang, J. Phys. D: Appl. Phys., 37, 2274 (2004). https://doi.org/10.1088/0022-3727/37/16/009
- J. J. Liu, M. H. Yu and W. L. Zhou, Appl. Phys. Lett., 87, 172505 (2005). https://doi.org/10.1063/1.2084321
- L. Zhu, M. Zhi, Z. Ye and B. Zhao, Appl. Phys. Lett., 88, 113106 (2006). https://doi.org/10.1063/1.2185609
- C. Xu, J. Chun, D. Kim, J.-J. Kim, B. Chon and T. Joo, Appl. Phys. Lett., 90, 083113 (2007). https://doi.org/10.1063/1.2431715
- R.-C. Wang, C.-P. Liu, J.-L. Huang and S.-J. Chen, Appl. Phys., Lett., 88, 023111 (2006). https://doi.org/10.1063/1.2161393
- X. Y. Xue, L. M. Li, H. C. Yu, Y. J. Chen, Y. G. Wang and T. H. Wang, Appl. Phys. Lett., 89, 043118 (2006). https://doi.org/10.1063/1.2236288
- X. Qu and D. Jia, Mater. Lett., 63, 412 (2009). https://doi.org/10.1016/j.matlet.2008.10.069
- S. Suwanboon, P. Amornpitoksuk, A. Haidoux and J. C. Tedenac, J. Alloys Compd., 462, 335 (2008). https://doi.org/10.1016/j.jallcom.2007.08.048
- C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I. C. Chen, J. Electrochem. Soc., 152, G378 (2005). https://doi.org/10.1149/1.1885345
- B. E. Sernelius and K. F. Berggren, Phys. Rev. B, 37, 10244 (1988). https://doi.org/10.1103/physrevb.37.10244
- K. Tominagaa, U. N. Umezua, I. Moria, T. Ushirob, T. Morigab and I. Nakabayashib, Thin Solid Films, 334, 39 (1998).
- J. Ma, J. F. H. Ma and S.-Y. Li, Thin Solid Films, 279, 213 (1996). https://doi.org/10.1016/0040-6090(95)08173-9
- S. Zafar, F. Ferekides and D. L. Morel, J. Vac. Sci. Technol. A, 13, 2177 (1995). https://doi.org/10.1116/1.579539
- Y.-Z. Chiou and I.-C. Chen, IEEE Sensors, 9, 4 (2009).
- H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton and J. Lin, Appl. Phys. Lett., 86, 243503 (2005). https://doi.org/10.1063/1.1949707
- Y.-K. Tseng, I.-N. Lin, K.-S. Liu, T.-S. Lin and I.-C. Chen, J. Mater. Res., 18, 714, (2003). https://doi.org/10.1557/JMR.2003.0096
- J. J. Wu and S. C. Liu, Adv. Mater., 14, 215 (2002). https://doi.org/10.1002/1521-4095(20020205)14:3<215::AID-ADMA215>3.0.CO;2-J
- W. I. Park, D. H. Kim, S. W. Jung and G. C. Yi, Appl. Phys. Lett., 80, 4232 (2002). https://doi.org/10.1063/1.1482800
- S. H. Lee, T. Minegishi, J. S. Park, S. H. Park, J. S. Ha, H. J. Lee, H. J. Lee, S. Ahn, J. Kim, H. Jeon and T. Yao, Nano Lett., 8, 2419 (2008). https://doi.org/10.1021/nl801344s
- C. W. Yao, H. P. Wu, M. Y. Ge, L. Yang, Y. W. Zeng, Y. W. Wang and J. Z. Jiang, Mater. Lett., 61, 3416 (2007). https://doi.org/10.1016/j.matlet.2006.11.094
- H. Zhang, D. Yanh, Y. J. Xiangyang, M. J. Xu and D. Que, J. Phys. Chem. B, 108, 3955 (2004). https://doi.org/10.1021/jp036826f
- H.-M. Cheng, W.-H. Chiu, C.-H. Lee, S.-Y. Tsai and W.-F. Hsieh, J. Phys. Chem. C, 112, 16359 (2008). https://doi.org/10.1021/jp805239k
- N. Lepot, M. K. V. Bael, H. V. D. Rul, J. D'haen, R. Peeters, D. Franco and J. Mullens, Mater. Lett., 61, 2624 (2007). https://doi.org/10.1016/j.matlet.2006.10.025
- M. N. Islam, T. B. Ghosh, K. L. Chopra and H. N. Acharya, Thin Solid Films, 280, 20 (1996). https://doi.org/10.1016/0040-6090(95)08239-5
- S. C. Navale, V. Ravia, D. Srinivas, I. S. Mulla, S. W. Gosavi and S. K. Kulkarni, Sensor. Actuator. B Chem., 130, 668 (2008). https://doi.org/10.1016/j.snb.2007.10.055
- J. F. Chang, C. C. Shen and M. H. Hon, Ceram. Int., 29, 245 (2003). https://doi.org/10.1016/S0272-8842(02)00111-6
- S. Yamauchi, H. Handa, A. Nagayama and T. Hariu, Thin Solid Films, 345, 12 (1999). https://doi.org/10.1016/S0040-6090(99)00096-6
- K. Ellmer, J. Phys. D: Appl. Phys., 34, 3097 (2001). https://doi.org/10.1088/0022-3727/34/21/301