• Electrical & Electronic Materials
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• v.8 no.4
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• pp.451-457
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• 1995

Most important study on development of high-Tc superconducting magnet is magnetic properties with design conditions To study optimal design condition of high-Tc superconducting magnet, small size solenoid magnet was designed and simulated. Design conditions are radius of bobbin, radius of magnet, length of magnet, critical cur-rent and notch size. We know that intensity of magnetic fields was controled by critical current and uniformity of magnetic fields was controled by notch size. The optimal design conditions to get the high intensity and uniformity of magnetic field in this experiments were radius of bobbin=3[cm], radius of magnetic=12[cm], length of Z=10[cm], notch size=6[cm] and critical current=12[A].

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.5
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• pp.455-462
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• 2016

Output Characteristics of the spaceborn image sensor such as infrared(IR) sensor are varied according to time elapses and sensor repetition on/off operation. As a result, the quality of IR sensor image is decreased. Therefore, spaceborne image sensor require a periodic calibration using a black body system by correcting a non-uniformity of the sensor. In this paper, we proposed a MEMS-based black body system that can implement the high temperature uniformity at various standard temperatures ranging from low to high temperature and easily estimate the representative surface temperature. In addition, it has advantages lightweight, low-power and high accuracy. The feasibility of the proposed MEMS-based black body system was verified through the thermal analysis.

• Journal of the Korean Society of Radiology
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• v.13 no.5
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• pp.705-711
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• 2019

Currently, the brain CT scan of the latest equipment lacks the study of parameter change and dose change and especially of noise, uniformity analysis and dose change. Therefore, this study attempted to study the phenomenon that occurs at this time by analyzing tube voltage, slice thickness, and pitch change in exposure parameters when using high specification CT. Experimental results show that uniformity is better when using high voltage, thick slice thickness selection, and minimum pitch. As a result of the combination, the most uniformity condition was 140 kVp, 10 mm and pitch 0.5. Noise was found to be improved regardless of pitch by increasing tube voltage and slice thickness. The radiation dose increased linearly with tube voltage and pitch. Therefore, the results of this study will serve as a reference for the use of High specification brain CT.

• Journal of Hydrogen and New Energy
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• v.33 no.1
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• pp.47-54
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• 2022

In this study, we performed numerical analysis for 1 kWe SOFC stack of internal manifold types according to the different manifold sizes to verify the influence of the flow uniformity into each cell. To simulate the flow phenomena in the stack, the continuity and momentum conservation equations including the standard k-𝜺 turbulent model for the steady-state conditions were applied. From the calculation results, we verified that the pressure drop from inlet pipes to outlet pipes decreased to a log scale as the manifold size increased in the internal manifold types. Also, we found that the flow uniformity increased on an exponential scale as the manifold size increased. In addition, the calculation results showed that the flow uniformity gradually improved as the fuel and oxygen utilization increased.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.165-169
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• 2008

It is very important to decompose uniformly the metal film in semiconductor devices process. The thickness uniformity of the ITO film by standard magnetron sputtering system are about $\pm4%\sim\pm5%$ and the center of the wafer is more thick than the edge of the wafer. We designed and made the discharge electrode structure and controlled the direction of sputtering materials in magnetron sputtering system. The thickness uniformity are increased to $\pm0.8\sim1.3%$ in 4" wafer using the new sputtering gun in magnetron sputtering system. In wafer to wafer thickness uniformity, $\pm$5.3% are increased to $\pm$1.5% using the new sputtering gun. The thickness uniformity of the Al film are about $\pm$1.0% using the new sputtering gun in magnetron sputtering system.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.339-342
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• 1998

Plasma etching of photoresist needs high etch rate, good uniformity and rae, good uniformity and low damage in low cost. ICP asher is expected to satisfy these requriement for next eneration semiconductor devices. ICPsimulator has been used to design the ashing chamber to redcue the development time and cost, and its results have been verified by QMS, OES and langmuir probe measurments. Plasma characteristics are monitored in terms of RF power and chamber pressure.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.692-695
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• 2008

Large area emissive displays have problems with nonuniform pixel characteristics and their individual ageing. A pixel integrated driver with pixel based optical feedback is presented to solve these problems. Photodetectors, optical feedback circuit and data handling capabilities are integrated in a high voltage CMOS technology.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1051-1059
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• 1988

In this study, we developed a proto-type RTP equipment by using tungsten halogen lamps. The system has been designed utilizing the result of the numerical analysis of the reactor. In order to analyze the system performance, experiments for activation of implanted atoms and oxidation process were performed. As a result, we obtained 2-3% uniformity in sheet resistance and 2-4% uniformity in oxide thickness, although after a long time process at high temperatures slip lines and warpage of the wafer have been observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.37-41
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• 2004

Parallel combination of cold chathode fluorescent lamps (CCFL) are widely used as the light sources of LCD TV backlight. Brightness uniformity is safisfied by using one transformer per one CCFL. Instead of using one transformer per oneCCFL, one transformer is used to drive 8 CCFLs by using differential driving method. A differential driving inverter with two transformers is developed to drive 16 CCFLs of 26' backlight for LCD TV. The brightness uniformity of $88\%$ was obtained by driving 26' backlight with the developed differential driving inverter successfully.