• 한국결정성장학회지
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• 제21권4호
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• pp.137-146
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• 2011

Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

• Bulletin of the Korean Chemical Society
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• 제35권8호
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• pp.2505-2511
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• 2014

Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

• 한국진공학회지
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• 제12권S1호
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• pp.95-99
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• 2003

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• 한국재료학회지
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• 제31권6호
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• pp.345-352
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• 2021

In this study, Ni nanoparticle supported by graphene oxide (GO) (Ni-GO) is successfully synthesized through hydrothermal synthesis and calcination, and Cr(VI) is extracted from aqueous solution. The morphology and structure of Ni-GO composites are characterized by scanning electron microscopy (SEM), trans mission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). High-resolution transmission electron microscopy (HRTEM) and XRD confirms the high dispersion of Ni nanoparticle after support by GO. Loading Ni on GO can obviously enhance the stability of Ni-GO composites. It can be calculated from TGA that the mass percentage of Ni is about 60.67 %. The effects of initial pH and reaction time on Cr(VI) removal ability of Ni-GO are investigated. The results indicate that the removal efficiency of Cr(VI) is greater than that of bared GO. Ni-GO shows fast removal capacity for Cr(VI) (<25 min) with high removal efficiency. Dynamic experiments show that the removal process conforms to the quasi-second order model of adsorption, which indicates that the rate control step of the removal process is chemical adsorption. The removal capacity increases with the increase of temperature, indicating that the reaction of Cr(VI) on Ni-GO composites is endothermic and spontaneous. Combined with tests and characterization, the mechanism of Cr(VI) removal by rapidly adsorption on the surface of Ni-GO and reduction by Ni nanoparticle is investigated. The above results show that Ni-GO can be used as a potential remediation agent for Cr(VI)-contaminated groundwater.

• 한국의학물리학회지:의학물리
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• 제12권2호
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• pp.113-124
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• 2001

목적: 수의 영상진단을 위하여 3T 능동차폐형 자석을 장착한 전신용 자기공명영상장비를 이용하여 고해상도의 개 두뇌, 척추, 복부 및 골반 자기공명영상을 획득하였다. 대상 및 방법: 128 MHz의 공명주파수를 갖는 RF코일을 사용하여 정상 개 및 환축으로부터 스핀에코와 고속 스핀에코 펄스시퀀스를 적용하였다. 전형적인 펄스시퀀스의 매개변수는 512$\times$512 matrix, 20 cm FOV, 3 mm 절편두께, 1 NEX를 사용하였다. 특히 T1 강조영상을 위하여 TR=500 ms, TE=10 혹은 17.4 ms을 사용하였으며, T2 강도영상을 위하여 TR=4000 ms, TE=108 ms을 사용하였다. 결과: 3T의 신호대잡음비는 기존 1.5T에 비하여 2.7배 정도 향상되었다. 본 연구에서 획득한 고해상도의 자기공명영상은 기존의 20cm FOV, 5m의 절편두께와 256$\times$256 해상도의 영상에 비하여 4배이상 증가하였다 3T 자기공명영상은 매우 미세한 혈관 구조물을 표출하는데 도움을 주며, 또한 백질과 회질의 상당한 대조도를 제공하여 주었다. 결론: 본 연구결과에서 3T로부터 얻은 자기공명영상은 기존 1.5T 영상에서 얻은 영상에 비하여 더 높은 해상도와 민감도를 제공하여 주었다. 3T 고자장 자기공명영상에 나타난 증가된 신호대잡음비는 생체 조직단위의 영상을 획득하는데 유용하였다. 이러한 고해상도의 자기공명영상은 비침습적인 방법으로서 미세조직의 이상유무를 진단하는데 있어서 향후 더욱 임상에 도움을 주리라 예상한다. 향후 자기공명영상은 수의 진단방사선분야에 새로운 장을 열어줄 수 있으리라 기대한다.

• 한국재료학회지
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• 제20권6호
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• 한국정보통신학회논문지
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• 제4권3호
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• pp.713-719
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• 2000

고체상 켜쌓기법(solid phase epitaxy)으로$Ge_xSi_{1-x}/Si$(111) 이종접합을 형성하기 위해 Si(111) 기판위에 먼저 Au를 1000A 증착하고 그 위에 Ge을 1000A 증착시켜 a-Ge/Au/Si(111)구조를 형성하고 이를 고진공 조건에서 이단계 열처리 하였다. 열처리 후 Auger 전자분광분석(AES), X-ray 회절(XRD), 고분해 투과전자현미경(HRTEM) 등을 통해 Au와 Ge의 거동과 형성된 $Ge_xSi_{1-x}$막의 특성을 열처리 조건에 따라 분석하였다. a-Ge/Au/Si(111)구조는 열처리에 의해 Au/GeSi/Si(111)의 구조로 변했으며 형성된$Ge_xSi_{1-x}/$((111)층은 Si(111) 기판의 면 방향과 잘 일치하였다. 그러나 $Ge_xSi_{1-x}/Si$((111)층 내부에 적층결함, 전이, 쌍정, planar defect 등이 주로 (111)면 방향으로 형성되어 있음을 알 수 있었다.

• 한국재료학회지
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• 제24권1호
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• pp.60-65
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• 2014

Fe-based amorphous coatings were fabricated on a soda-lime glass substrate by the vacuum kinetic spray method. The effect of the gas flow rate, which determines particle velocity, on the deposition behavior of the particle and microstructure of the resultant films was investigated. The as-fabricated microstructure of the film was studied by field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). Although the activation energy for transformation from the amorphous phase to crystalline phase was lowered by severe plastic deformation and particle fracturing under a high strain rate, the crystalline phases could not be found in the coating layer. Incompletely fractured and small fragments 100~300 nm in size, which are smaller than initial feedstock material, were found on the coating surface and inside of the coating. Also, some pores and voids occurred between particle-particle interfaces. In the case of brittle Fe-based amorphous alloy, particles fail in fragmentation fracture mode through initiation and propagation of the numerous small cracks rather than shear fracture mode under compressive stress. It could be deduced that amorphous alloy underwent particle fracturing in a vacuum kinetic spray process. Also, it is considered that surface energy caused by the formation of new surfaces and friction energy contributed to the bonding of fragments.