• 한국세라믹학회지
• /
• 제48권5호
• /
• pp.454-457
• /
• 2011

We report the preparation of nanocrystalline cobalt ferrite, $CoFe_2O_4$, particles using recycled $Co_3O_4$ and their surface coating with silica using micro emulsion method. Firstly, the $Co_3O_4$ powders were separated from waste cemented carbide with acid-base chemical treatment. The cobalt ferrite nanoparticles with the size 10 nm are prepared by thermal decomposition method using recycled $Co_3O_4$. $SiO_2$ was coated onto the $CoFe_2O_4$ particles by the micro-emulsion method. The $SiO_2$-coated $CoFe_2O_4$ particles were studied their physical properties and characterized by X-ray diffraction (XRD), high resolution-transmission electron microscopy (TEM) analysis and CIE Lab value.

• Transactions on Electrical and Electronic Materials
• /
• 제3권3호
• /
• pp.8-13
• /
• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• 대한원격탐사학회:학술대회논문집
• /
• 대한원격탐사학회 2003년도 Proceedings of ACRS 2003 ISRS
• /
• pp.351-353
• /
• 2003

We present a retrieval scheme for the remote sensing of evapotranspiration (ET) over rice paddy. To perform the retrieval, high-resolution airborne imagery of multi-spectral visible and thermal infrared data, and ground-based meteorological measurements are utilized. Our ET retrieval scheme is based on the basic principal of surface energy budget, which is a result of balance in longwave and shortwave radiation, latent heat, sensible heat, and energy flux into the ground. To partition the latent and sensible heat fluxes of interest from the energy balance equation, three basic parameters are of most concern, including albedo, surface temperature, and normalized difference vegetation index (NDVI). The NDVI and albedo can be easily derived from the visible and near infrared spectral data, while the surface tem-perature can be determined through the analysis of the infrared data with the Stefan Boltzmann law. From the airborne imagery taken on 28 April 2003, we observe very good dry and wet pixels that can be easily corre-sponded to the radiation and evaporation controlled crite-ria, respectively, and, hence, for the further use in defin-ing the evaporative fraction needed to partition sensible and latent heat fluxes from the net energy flux. The de-rived ET is compared with the in situ measurements.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.340-340
• /
• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

• Applied Microscopy
• /
• 제49권
• /
• pp.1.1-1.10
• /
• 2019

Joints of three-dimensional (3D) rutile-type (r) tin dioxide ($SnO_2$) nanowire networks, produced by the flame transport synthesis (FTS), are formed by coherent twin boundaries at $(101)^r$ serving for the interpenetration of the nanowires. Transmission electron microscopy (TEM) methods, i.e. high resolution and (precession) electron diffraction (PED), were utilized to collect information of the atomic interface structure along the edge-on zone axes $[010]^r$, $[111]^r$ and superposition directions $[001]^r$, $[101]^r$. A model of the twin boundary is generated by a supercell approach, serving as base for simulations of all given real and reciprocal space data as for the elaboration of three-dimensional, i.e. relrod and higher order Laue zones (HOLZ), contributions to the intensity distribution of PED patterns. Confirmed by the comparison of simulated and experimental findings, details of the structural distortion at the twin boundary can be demonstrated.

• 대한금속재료학회지
• /
• 제48권5호
• /
• pp.449-455
• /
• 2010

To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.23-23
• /
• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국결정성장학회지
• /
• 제25권2호
• /
• pp.62-67
• /
• 2015

혼합소스 HVPE 방법을 사용하여 탄소 마이크로구를 합성하였다. 소스 물질로는 그래파이트 보트에 담겨 진 Ga, Al을 사용하였고 반응가스로 암모니아, 염산, 질소 가스를 사용하였다. 탄소 마이크로구의 합성은 $1090^{\circ}C$에서 실시하였다. 질소 가스는 5000, 염산 가스는 80, 암모니아 가스는 2000 sccm으로 공급되며 반응 시간은 3시간으로 하였다. 탄소 마이크로구의 SEM 측정 결과 수백 ${\mu}m$의 지름을 가지고 매끈한 표면을 가지는 완전한 구형 모양을 가짐을 알 수 있었다. XPS 결과 탄소 마이크로구의 내부는 탄소 71.78 wt%, 산소 15.37 wt%, 황 0.32 wt%, 규소 1.97 wt%로 구성되어 있었다. 또한 TEM 분석을 통해 탄소 마이크로구가 비정질임을 알 수 있었다. 탄소 마이크로구가 합성된 것은 에피 성장 과정 중에 배양판과 같이 홈이 파져 있는 공간에서 가스 간의 흡착 반응에 의해 탄소 마이크로구의 성분들이 합성된 것으로 판단된다.

• Investigative Magnetic Resonance Imaging
• /
• 제5권2호
• /
• pp.138-148
• /
• 2001

목적 : 임상적용 가능시간 내에 세계 최초의 3T 능동차폐형 자석을 장착한 전신용 자기공명영상장비를 이용하여 고해상도의 자기공영영상을 획득하였다. 대상 및 방법: 128 MHz의 공명주파수를 갖는 RF코일을 사용하여 정상인으로부터 스핀에코와 고속 스핀에코 펄스 시퀀스를 적용한 두뇌, 무릎, 발 및 손목영상 등을 획득하였다. 전형적인 펄스시퀀스의 매개변수는 $512{\times}512$ matrix, 20 cm FOV, 3 mm 절편두께, 1 NEX를 사용하였다. 특히 T1 강조영상을 위하여 TR=500 ms, TE=10 혹은 17.4 ms을 사용하였으며, T2 강도영상을 위하여 TR=4000 ms, TE=108 ms을 사용하였다. 결과: 3T의 신호대잡음비는 기존 병원에 설치된 1.57에 비하여 2.7배 정도 향상되었다. 3T자기공명영상은 매우 미세한 혈관 구조물을 표출하는데 도움을 주며, 또한 백질과 회질의 상당한 대조도를 제공하여 주었다. 결론: 본 연구결과에서 37로부터 얻은 자기공명영상은 기존 1.57 영상에서 얻은 영상에 비하여 더 높은 해상도와 민감도를 제공하여 주었다 3T 고자장 자기공명영상에 나타난 증가된 신호대잡음비는 생체 조직단위의 영상을 획득하는데 유용하였다. 이러한 고해상도의 자기공명영상은 비침습적인 방법으로서 미세조직의 이상유무를 진단하는데 있어서 향후 더욱 임상에 도움을 주리라 예상한다.

• 한국진공학회지
• /
• 제19권1호
• /
• pp.14-21
• /
• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.