• Journal of electromagnetic engineering and science
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• v.14 no.2
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• pp.47-53
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• 2014

This paper presents a high gain and high harmonic rejection low-noise amplifier (LNA) for software-defined radio receiver. This LNA exploits the high quality factor (Q) series resonance technique. High Q series resonance can amplify the in-band signal voltage and attenuate the out-band signals. This is achieved by a source impedance transformation. This technique does not consume power and can easily support multiband operation. The chip is fabricated in a $0.13-{\mu}m$ CMOS. It supports four bands (640, 710, 830, and 1,070MHz). The measured forward gain ($S_{21}$) is between 12.1 and 17.4 dB and the noise figure is between 2.7 and 3.3 dB. The IIP3 measures between -5.7 and -10.8 dBm, and the third harmonic rejection ratios are more than 30 dB. The LNA consumes 9.6 mW from a 1.2-V supply.

• Particle and aerosol research
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• v.20 no.2
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• pp.57-68
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• 2024

A silicon carbide (SiC) ceramic filter is an effective component for hot flue gas cleaning because of its high collection efficiency, high thermal shock resistance, and excellent mechanical strength. The effect of molding pressure in the production of SiC granular ceramic filters, on the mechanical strength and filtration performance, was investigated in this work. It was found that the ceramic filters produced at molding pressures less than 20 MPa have low mechanical strength and that this result was caused by weak physical interaction among the ceramic powders due to defects and cracks. On the other hand, the filter quality factor(q_F), which represents filtration performance of filter media, decreased with increasing the molding pressure due to the drastic increase in pressure drop. Ceramic filter performance factor(q_FM), which is the manipulation of maximum mechanical strength and q_F, was introduced to consider both mechanical strength and filtration performance in this study. As a result, molding pressure of 30 MPa was desirable to produce a SiC granular ceramic filter based on q_FM.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.324-329
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• 2006

In this paper, a resonator with the substrate integrated waveguide(SIW) structure at the satellite communication band is presented. The SIW structure is realized by via-holes on the dielectric substrate and has an advantage of integration with other circuits. For the measurement, a designed back-to-back transition has the insertion loss of 0.4 dB at 18 GHz. Also, the quality factor of the resonator with the SIW structure including back-to-back transition is obtained to be 222. The high-Q resonator with the SIW structure can be used in filter, oscillator, and voltage controlled oscillator.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.350-353
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• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.89-94
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• 2008

In this paper, a cascade of a wideband amplifier and a high-Q bandpass filter (BPF) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion receivers. The wideband amplifier is designed to obtain the -3dB bandwidth of 5.4GHz, and the high-Q BPF is designed to select a 2.4GHz RF signal for the Bluetooth specifications. The measured results demonstrate 18.8dB power gain at 2.34GHz with 31MHz bandwidth, corresponding to the quality factor of 75. Also, it shows the noise figure (NF) of 8.6dB, and the broadband input matching (S11) of less than -12dB within the bandwidth. The whole chip dissipates 64.8mW from a single 1.8V supply and occupies the area of $1.0{\times}1.0mm2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.1
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• pp.137-146
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• 2009

We present a micromechanical digital-to-analog (DA) variable capacitor using a parallel digital actuator array, capable of accomplishing high-Q tuning. The present DA variable capacitor uses a parallel interconnection of digital actuators, thus achieving a low resistive structure. Based on the criteria for capacitance range ($0.348{\sim}1.932$ pF) and the actuation voltage (25 V), the present parallel DA variable capacitor is estimated to have a quality factor 2.0 times higher than the previous serial-parallel DA variable capacitor. In the experimental study, the parallel DA variable capacitor changes the total capacitance from 2.268 to 3.973 pF (0.5 GHz), 2.384 to 4.197 pF (1.0 GHz), and 2.773 to 4.826 pF (2.5 GHz), thus achieving tuning ratios of 75.2%, 76.1%, and 74.0%, respectively. The capacitance precisions are measured to be $6.16{\pm}4.24$ fF (0.5 GHz), $7.42{\pm}5.48$ fF (1.0 GHz), and $9.56{\pm}5.63$ fF (2.5 GHz). The parallel DA variable capacitor shows the total resistance of $2.97{\pm}0.29\;{\Omega}$ (0.5 GHz), $3.01{\pm}0.42\;{\Omega}$ (1.0 GHz), and $4.32{\pm}0.66\;{\Omega}$ (2.5 GHz), resulting in high quality factors which are measured to be $33.7{\pm}7.8$ (0.5 GHz), $18.5{\pm}4.9$ (1.0 GHz), and $4.3{\pm}1.4$ (2.5 GHz) for large capacitance values ($2.268{\sim}4.826$ pF). We experimentally verify the high-Q tuning capability of the present parallel DA variable capacitor, while achieving high-precision capacitance adjustments.

• Progress in Superconductivity
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• v.8 no.2
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• pp.143-151
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• 2007

Accurate measurements of the microwave surface resistance (Rs) of high temperature superconductor (HTS) films are important with regard to applications of HTS materials for wireless communications. As the surface resistance values of HTS films are usually extracted from the measured unloaded quality factor ($Q_0$) of resonators made of HTS films, it is essential to measure the resonator $Q_0$ with accuracy. The $TE_{011}\;mode\;Q_0$ of sapphire resonators with the endplates made of $YBa_2Cu_3O_{7-{\delta}}$(YBCO) film on $LaAlO_3$ is measured by using the S-parameter circle-fit method at a frequency of about 19.6 GHz and temperatures of 30 K to 90 K, which is compared with the measured values by using the Lorentzian-fit method. Good agreements are found between the two sets of $Q_0$ values measured by using the two different methods whether the resonator is used in a weak-coupling scheme or a strong-coupling scheme, showing reliability of both methods fur measuring the resonator $Q_0$ accurately. The $Q_0$ of sapphire resonators with a gap between the top plate and the rest of the resonator is also discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.781-783
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• 1999

A storage or transmission of image is difficult without image compression processing because the numbers of generated or reborned image data are very much. In case of the random signal, image compression efficiency is low doing without loss of image information, but compressibility by using JPEG is better. We used Huffman code of JPEG, it assigne the low bit value for data of a lot of generated frequency, assigne the high bit value for data of a small quantity. This paper improved image compression efficiency with transformming Q-factor and certified the results with compressed image. A proposed method is very efficience for continuos a color tone image.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.97-100
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• 2008

Mount Fuji is the focus of intense study because of its potential hazard signaled by seismic, geologic and historical activity. Based on extensive seismic data recorded in the vicinity of Mt. Fuji, coda quality factor ($Q_c^{-1}$) using a single scattering model hypothesis, and intrinsic and scattering quality factor $(Q_i^{-1}$ and $Q_s^{-1})$ using the Multiple Lapse Time Window Analysis (MLTW) method was measured. To focus the study on the magmatic structure below Mt. Fuji, to the data were separated into two groups: a near-Fuji region of rays traversing an area with radius 5 km around the summit (R < 5 km), and a far-Fuji region of rays beyond a radius of 20 km around the summit (R > 20 km). The results of the study have a small error range due to the large data sample, showing that all $Q^{-1}$ values in near-Fuji area are greater than those of far-Fuji area, and $Q_i^{-1}$ for both the near and far-Fuji area is higher than $Q_s^{-1}$ at high frequencies. The $Q_i^{-1}$ values of the near-Fuji area are lower than those of the other volcanic areas considered, while values of $Q_s^{-1}$ are not. The low $Q_i^{-1}$ for the volcanic region of near-Fuji suggests that the magmatic activity, or percent of partial melt, at Mt. Fuji is not as active as hot spot volcanoes such as Kilauea, Hawaii.