• 제목/요약/키워드: High Power LED

검색결과 603건 처리시간 0.025초

홀더 암페어 조절 아크용접 시스템 개발 및 그 유용성 (Development of Holder Ampere Control Arc Welding System and It′s Usefulness)

  • 이용복
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 1994년도 특별강연 및 추계학술발표 개요집
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    • pp.89-92
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    • 1994
  • According to the industrial development welding technology is necessitated to develop in the direction of full automation, high efficiency, energy saving, and full safety. In this study, thus, a simple holder ampere controller for welding systems is developed and applied to arc welders and its capability is examined and tested. The results are as follows: 1. It has a simple structure, since the primary AC power for the welder can be directly control led using a triac. 2. It can control the electric power strength in several steps as well as on and off easily, since a small-sized variable resistance is installed in the small controller on the welding holder. 3. In real field applications a welding system with this controller increases the working efficiency greatly compare to the conventional arc welders without the system, because the controller can control the ampere onsite far from the main power supply. 4. It can reduce the probability of the electrical mishap due to electrical leakage, since the electricity is disconnected as soon as the switch is off or welding person's hand is taken off from the welder after the work or for rest. 5. It can control the welding depth in the beginning and do the crater treatment well in the ending of welding, since it always supplies the relevent amount of electrical current. Therefore, it can improve the mechanical properties of the welding zone.

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Nuclear Design Feasibility of the Soluble Boron Free PWR Core

  • Kim, Jong-Chae;Kim, Myung-Hyun;Lee, Un-Chul;Kim, Young-Jin
    • Nuclear Engineering and Technology
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    • 제30권4호
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    • pp.342-352
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    • 1998
  • A nuclear design feasibility of soluble boron free(SBF core for the medium-sized(600MWe) PWR was investigated. The result conformed that soluble boron free operation could be performed by using current PWR proven technologies. Westinghouse advanced reactor, AP-600 was chosen as a design prototype. Design modification was applied for the assembly design with burnable poison and control rod absorber material. In order to control excess reactivity, large amount of gadolinia integral burnable poison rods were used and B4C was used as a control rod absorber material. For control of bottom shift axial power shape due to high temperature feedback in SBF core, axial zoning of burnable poison was applied to the fuel assemblies design. The combination of enrichment and rod number zoning for burnable poison could make an excess reactivity swing flat within around 1% and these also led effective control on axial power offset and peak pin power, The safety assessment of the designed core was peformed by the calculation of MTC, FTC and shutdown margin. MTC in designed SBF core was greater around 6 times than one of Ulchin unit 3&4. Utilization of enriched BIO(up to 50w1o) in B4C shutdown control rods provided enough shutdown margin as well as subcriticality at cold refueling condition.

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ARM 클러스터에서 에너지 효율 향상을 위한 MPI와 MapReduce 모델 비교 (Comparing Energy Efficiency of MPI and MapReduce on ARM based Cluster)

  • 자한제프 마크불;페르마타 눌 리즈키;오상윤
    • 한국컴퓨터정보학회:학술대회논문집
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    • 한국컴퓨터정보학회 2014년도 제49차 동계학술대회논문집 22권1호
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    • pp.9-13
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    • 2014
  • The performance of large scale software applications has been automatically increasing for last few decades under the influence of Moore's law - the number of transistors on a microprocessor roughly doubled every eighteen months. However, on-chip transistors limitations and heating issues led to the emergence of multicore processors. The energy efficient ARM based System-on-Chip (SoC) processors are being considered for future high performance computing systems. In this paper, we present a case study of two widely used parallel programming models i.e. MPI and MapReduce on distributed memory cluster of ARM SoC development boards. The case study application, Black-Scholes option pricing equation, was parallelized and evaluated in terms of power consumption and throughput. The results show that the Hadoop implementation has low instantaneous power consumption that of MPI, but MPI outperforms Hadoop implementation by a factor of 1.46 in terms of total power consumption to execution time ratio.

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Flyback AC-DC Converter with Low THD Based on Primary-Side Control

  • Chang, Changyuan;He, Luyang;Cao, Zixuan;Zhao, Dadi
    • Journal of Power Electronics
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    • 제18권6호
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    • pp.1642-1649
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    • 2018
  • A single-stage flyback LED AC-DC converter based on primary-side control under constant current mode is proposed in this study. The proposed converter features low total harmonic distortion (THD) and high power factor (PF). It also consists of a zero-crossing distortion compensation circuit and a variable duty ratio control compensation circuit to deal with the line current distortions caused by fixed duty ratio control. The system model and layout are built in Simplis and Cadence, respectively. The feasibility and performance of the proposed circuit is verified by designing and fabricating an IC controller in the HHNEC $0.35{\mu}m$ 5 V/40 V HVCMOS process. Experimental results show that the PF can reach a level in the range of 0.985-0.9965. Moreover, the average THD of the entire system is approximately 10%, with the minimum being 6.305%, as the input line voltage changes from 85 VAC to 265 VAC.

항로표지(등부표) 전원공급용 고성능 축전지 개발 (Development of High Performance Battery for Navigation Aid's Power)

  • 윤석준;조명훈;이대표
    • 한국항해항만학회:학술대회논문집
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    • 한국항해항만학회 2009년도 공동학술대회
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    • pp.435-438
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    • 2009
  • 항로표지용 등부표는 주요 항로 및 항만 입출항 선박 안전 유도를 위한 해상교통 안전 시설로서 현재는 해상교통환경 변화로 다기능이 요구되는 상황이다. 최근 고광도 등명기와 항로표지원격감시제어 및 e-Navigation 지원시스템구축과 해양기상관측장비 등을 구축함에 따라 항로표지용 등부표에 더욱 안정적인 전원 공급을 위한 고성능 축전지가 요구되고 있다. 본 연구에서는 리튬이차전지 중에서도 안전성이 우수한 리튬폴리머전지 설계기술을 적용, 기존 산화물계보다 안전성이 보다 더 우수한 $LiFePO_4$를 양극재료로 사용하여 단전지를 개발하고 단전지의 전기적 특성 고찰하였다. 또한 단전지를 이용한 3.6kWh급 축전지를 제작하여 그 성능을 연축전지와 비교 분석하였다.

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고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs (High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors)

  • 문재경;조규준;장우진;이형석;배성범;김정진;성호근
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

TFT-LCD용 휘도 성능을 향상시키는 나노 와이어 그리드 편광 필름의 제작 (Fabrication of a Nano-Wire Grid Polarizer for Brightness Enhancement in TFT-LCD Display)

  • 허종욱;남수용
    • 한국인쇄학회지
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    • 제29권3호
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    • pp.105-124
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    • 2011
  • TFT-LCD consists of LCD panel on the top, circuit unit on the side and BLU on the bottom. The recent development issues of BLU-dependent TFT-LCD have been power consumption minimization, slimmerization and size maximization. As a result of this trend, LED is adopted as BLU instead of CCFL to increase brightness and to reduce thickness. In liquid crystal displays, the light efficiency is below 10% due to the loss of light in the path from a light source to an LCD panel and presence of absorptive polarizer. This low efficiency results in low brightness and high power consumption. One way to circumvent this situation is to use a reflective polarizer between backlight units and LCD panels. Since a nano-wire grid polarizer has been known as a reflective polarizer, an idea was proposed that it can be used for the enhancement of the brightness of LCD. The use of reflective polarizing film is increasing as edge type LED TV and 3D TV markets are growing. This study has been carried out to fabrication of the nano-wire grid polarizer(NWGP) and investigated the brightness enhancement of LCD through polarization recycling by placing a NWGP between an c and a backlight unit. NWGPs with a pitch of 200nm were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the UV imprinting and was applied to plastic PET film. In this case, the brightness of an LCD with NWGPs was 1.21 times higher than that without NWGPs due to polarization recycling.

가시광 통신 시스템의 간섭 완화 성능 (Performance of Interference Mitigation for Visible Light Communi cation System)

  • 박인환;김윤현;김진영
    • 한국위성정보통신학회논문지
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    • 제6권1호
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    • pp.57-62
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    • 2011
  • 가시광 통신 시스템은 LED를 통해 방사되는 가시광을 이용한 차세대 통신 시스템으로, 유비쿼터스 네트워크 서비스 구축 시 에너지 절감 효과를 가져 올 수 있다. 또한 기존 인프라를 활용하여 고출력 전송이 가능하며 유지 보수 비용을 절감할 수 있다. 하지만 가시광 통신 시스템에서는 인접 송신기 간섭 신호의 영향으로 네트워크 경계에 위치한 수신기의 신호 검출 성능은 급격히 열화되고 전송 효율은 감소하게 된다. 본 논문에서는 광 빔포밍을 활용하는 경우, 송신기 간 간섭 완화 방안을 제시하고 그 수신 성능을 평가한다. 제안하는 광 빔포밍 방식은 사용하지 않는 기존 가시광 통신 시스템 대비 BER 측면에서 향상된 성능을 보이며, 평균 5~7dB 성능 개전을 가져온다.

고출력 LED 패키지의 Thermal Via 형성을 위한 Si 기판의 이방성 습식식각 공정 (Anisotropic Wet-Etching Process of Si Substrate for Formation of Thermal Vias in High-Power LED Packages)

  • 유병규;김민영;오태성
    • 마이크로전자및패키징학회지
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    • 제19권4호
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    • pp.51-56
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    • 2012
  • 습식공정으로 thermal via용 SI 관통 via를 형성하기 위해 TMAH 용액의 농도와 온도에 따른 Si 기판의 이방성 습식식각 거동을 분석하였다. TMAH 용액의 온도를 $80^{\circ}C$로 유지한 경우, 5 wt%, 10 wt% 및 25 wt% 농도의 TMAH 용액은 각기 $0.76{\mu}m/min$, $0.75{\mu}m/min$$0.30{\mu}m/min$의 Si 식각속도를 나타내었다. 10 wt% TMAH 용액의 온도를 $20^{\circ}C$$50^{\circ}C$로 유지시에는 각기 $0.07{\mu}m/min$$0.23{\mu}m/min$으로 식각속도가 저하하였다. Si 기판의 양면에 동일한 형태의 식각 패턴을 형성하여 $80^{\circ}C$의 10 wt% TMAH 용액에 장입하고 5시간 식각하여 깊이 $500{\mu}m$의 관통 via hole을 형성하였다.

마이크로솔더링을 이용한 정전류다이오드 회로 자외선 LED 광원모듈 제작 (Fabrication Of Ultraviolet LED Light Source Module Of Current Limiting Diode Circuit By Using Flip Chip Micro Soldering)

  • 박종민;유순재;카완 안일
    • 한국전기전자재료학회논문지
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    • 제29권4호
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    • pp.237-240
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    • 2016
  • The improvement of irradiation intensity and irradiation uniformity is essential for large area and high power UVA light source application. In this study, large number of chips bonded by micro soldering technique were driven by low current, and current limiting diodes were configured to supply constant current to parallel circuits consisting of large number of series strings. The dimension of light source module circuit board was $350{\times}90mm^2$ and 16,650 numbers of 385 nm flip chip LEDs were used with a configuration of 90 parallel and 185 series strings. The space between LEDs in parallel and series strings were maintained at 1.9 mm and 1.0 mm distance, respectively. The size of the flip chip was $750{\times}750{\mu}m^2$ were used with contact pads of $260{\times}669{\mu}m^2$ size, and SAC (96.5 Sn/3.0 Ag/0.5 Cu) solder was used for flip chip bonding. The fabricated light source module with 7.5 m A supply current showed temperature rise of $66^{\circ}C$, whereas irradiation was measured to be $300mW/cm^2$. Inaddition, 0.23% variation of the constant current in each series string was demonstrated.