• Journal of the Institute of Electronics Engineers of Korea SD
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• 제44권11호
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• pp.36-42
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• 2007

In this paper, we have studied temperature compensation architecture for a bust mode optical transmitter to convert the electric burst mode date signal to a optical one through the laser diode. In order to get stable high speed data transmission, we used digital sampling technique with a microprocessor for the temperature compensation of the laser diode, not the previous real time analog technique. Though the digital automatic power control circuit should be complemented the previous analog one with accuracy and effectiveness. So the digital technique will be more effective in further future in development for the over Gb/s transmitting speed.

• Korean Journal of Optics and Photonics
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• 제19권3호
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• pp.229-236
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• 2008

The optimum conditions of second harmonic generation (SHG) can be successfully achieved experimentally using single pass and double pass methods of a pumping beam. The beam has a power of several Watts radiated by a DOFA (Diode Laser Oscillator & Fiber Amplifier) system, which is a high power CW wavelength tunable infrared laser system, in a PPLN (Periodically Poled MgO doped Lithium Niobate) nonlinear crystal. In the case of a single pass method, the parameters are the wavelength of 535 nm for SHG and the output power of 245 mW generated from the pumping input beam with wavelength of 1070 nm and the power of 2.45 W at phase matching temperature of $108.9^{\circ}C$. The conversion efficiency of SHG was 10%. In order to enhance the output of SHG, the double pass method of the SHG system of a PPLN using a concave mirror for the retroreflection and a pair of wedged flat windows for phase compensation was also presented. In this double pass system, we obtained the SHG output beam with the wavelength of 535 nm and the maximum power of 383 mW at optimum phase matching temperature of $108.5^{\circ}C$ by using an incident pumping beam with wavelength of 1070 nm and the power of 2.45 W. The maximum conversion efficiency is 15.6%, which is more than that of the single pass method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제26권2호
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• pp.80-83
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• 2016

In the present paper, garnet structured $Y_3Al_5O_{12}:Ce^{3+}$ (YAG : Ce) ceramic phosphor plate (CPP) for high power laser diode (LD) was prepared and optical properties were analyzed. We synthesized monodispersed spherical nano-sized YAG : Ce particles by liquid phase method, fabricated phosphor ceramic plate with the addition of $Al_2O_3$. $75{\mu}m$ and $100{\mu}m$ thick YAG : Ce CPPs were compared in terms of the factors of conversion efficacy, thermal quenching, luminance and correlated color temperature (CCT). In conclusion, conversion efficacy decreased by 25 % in both samples and $100{\mu}m$ thick sample provides better optical properties of thermal quenching, maximum light conversion efficacy and maximum luminance value.

• Korean Journal of Optics and Photonics
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• 제22권2호
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• pp.96-101
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• 2011

Operational and thermal characteristics of a thin disk Yb:YAG crystal with a thickness of 0.8 mm were studied using as a pumping source a fiber-coupled 930 nm laser diode. The heat generated in the crystal was dissipated by placing both surfaces in contact with copper plates with central hole, and the dependence of the temperature change in the illuminated spot on hole size was investigated by measuring the spectral change of the lasing peaks. The slope efficiency and optical-to-optical efficiency with respect to the LD pump power were as high as 42.2% and 34.8%, respectively. The temperature at the illuminated spot increased with diode current and with increasing hole size of the copper plate. When the hole size considerably exceeded the crystal thickness, the temperature rise deviated from the linear increase at high pump power.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Korean Journal of Optics and Photonics
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• 제10권5호
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• pp.364-368
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• 1999

We investigate the evaluation items of LSU (Laser Scanning Unit), such as beam size, f$\theta$ characteristics, linearity, skew and bow, optical power ratio between image height of 0mm and $\pm$108 mm, pitch error, Jitter and shift of printing position. Through the measurement of LSU using BSH (Beam Scan Head) installed on LMC (Linear Motion Controller) which moves linearly within the whole scanning range (-108 mm~+108 mm), we can ascertain plastic f$\theta$ lenses, which are manufactured by TVLP (Two-step Variable Low Pressure) molding method, to satisfy 600DPI(Dots Per Inch) performance.

• Journal of Mechanical Science and Technology
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• 제19권10호
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• pp.1856-1863
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• 2005

In this study, a visual sensor system for weld seam tracking the I-butt weld joints in GMA welding was constructed. The sensor system consists of a CCD camera, a diode laser with a cylindrical lens and a band-pass-filter to overcome the degrading of image due to spatters and arc light. In order to obtain the enhanced image, quantitative relationship between laser intensity and iris opening was investigated. Throughout the repeated experiments, the shutter speed was set at 1/1000 second for minimizing the effect of spatters on the image, and therefore the image without the spatter traces could be obtained. Region of interest was defined from the entire image and gray level of the searched laser stripe was compared to that of weld line. The differences between these gray levels lead to spot the position of weld joint using central difference method. The results showed that, as long as weld line is within $\pm15^{o}$ from the longitudinal straight line, the system constructed in this study could track the weld line successfully. Since the processing time is no longer than 0.05 sec, it is expected that the developed method could be adopted to high speed welding such as laser welding.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제36D2호
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• pp.81-89
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• 1999

Among various wavelength conversion technologies, that using the cross-gain modulation in laser diode makes it possible to deal with the high speed signal quite simply and efficiently. In this paper, presented was the applicability of an improved time-domain large-signal dynamic model as a CAD tool to analyzed the characteristics of SSGDBR(Superstructure Grating Distributed Bragg Reflector) laser diodes used for wavelength converters. Using this model, it was shown that this kind of wavelength converter can provide the widely tunable wavelength conversion of the high speed data above 10 Gbps. We also investigated the effect of input optical power and the bias current on the characteristics of the device such as extinction ration and eye diagram. The modeling results show very similar trend to the experimental reports.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제21권8호
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• pp.760-765
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• 2008

Low power laser therapy is internationally certified and is known to be effective in stimulating DNA in living organisms, increasing protein synthesis and activating cell division, smoothing blood circulation, promoting cell activation, cell regeneration and function. It also has anti-inflammatory, anti-edemic, anti-fibrous dysplastic and neuralogic hyperfunctional effects. This study was intended to verify the effect of LED irradiation therapy on wound healing in cell and animal tests by applying LED irradiator using a laser and laser diode, which was independently designed and developed to emit beams of similar wavelength to that of a laser. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity and reservation. In case of cell proliferation experiment, each experiment was performed to irradiation group and non-irradiation group for tissue cells. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590 nm transmittance of micro-plate reader. In the wound healing experiment, 1$cm^2$ wounds on the skin wound of SD-Rat(Sprague-Dawley Rat) were made. Light irradiation group and none light irradiation group divided, each group was irradiated one hour a day for 9 days. As a result, the cell increase of tissue cells was verified in irradiation group as compared to non-irradiation group. And, compared with none light irradiation group, the lower incidence of inflammation and faster recovery was shown in light irradiation group.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제40권9호
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• pp.666-672
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• 2003

In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.