• 제목/요약/키워드: High Power

검색결과 23,118건 처리시간 0.05초

Green Mode Buck Switch for Low Power Consumption

  • Jang, KyungOun;Kim, Euisoo;Lim, Wonseok;Lee, MinWoo
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2013년도 전력전자학술대회 논문집
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    • pp.397-398
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    • 2013
  • Fairchild Green Mode off line buck switch for low standby power consumption and high reliability is presented. By reducing operating current and optimizing switching frequency, 20mW power consumption is achieved. High performance trans-conductance amplifier and green mode function improve the ripple and regulation in the output voltage. The conventional $FPS^{TM}$ buck and novel Fairchild buck switch are compared to show the improvement of performance. Experimental results are showed using 2W evaluation board.

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A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

  • Lee, Jong-Lam;Kim, Hae-Cheon;Mun, Jae-Kyung;Kwon, Oh-Seung;Lee, Jae-Jin;Hwang, In-Duk;Park, Hyung-Moo
    • ETRI Journal
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    • 제16권4호
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    • pp.1-11
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    • 1995
  • A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

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높은 역률을 가지는 단순 구조 LED 구동 전력컨버터 (Simple Structure LED-Driving Power Converter with High Power Factor)

  • 정강률
    • 전기전자학회논문지
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    • 제22권3호
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    • pp.767-773
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    • 2018
  • 본 논문에서는 높은 역률을 가지는 단순 구조 LED 구동 직류 전력컨버터를 제안한다. 제안한 전력컨버터는 PFC 부스트 컨버터와 전통적인 플라이백 컨버터를 오직 하나의 전력변환 회로로 병합함으로써 LED 구동 전력컨버터의 구조를 단순화한다. 그리하여 제안한 컨버터는 오직 하나의 PWM 제어기 IC를 이용하여 제어되고 높은 역률과 정출력 전압/전류 및 제작비용의 효율성을 달성한다. 따라서 제안한 컨버터는 LED 조명시스템의 산업 생산과 이용에 적합하다. 본 논문에서는 제안한 컨버터의 동작분석과 설계예시를 간단하게 설명한다. 또한 설계된 회로파라미터들에 근거하여 제작된 프로토타입의 실험결과를 통하여 제안한 컨버터의 동작특성을 입증한다.

산업용 모터 구동을 위한 고내압 저전력 Power MOSFET 최적화 설계에 관한 연구 (A Study on High-voltage Low-power Power MOSFET of Optimization for Industrial Motor Drive)

  • 김범준;정헌석;김성종;정은식;강이구
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.170-175
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    • 2012
  • Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

플라즈마 전원장치용 LLCC 공진컨버터의 이득 특성 분석 (Analysis of the Gain Characteristic in LLCC Resonant Converter for Plasma Power Supply)

  • 권민준;김태훈;이우철
    • 전기학회논문지
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    • 제65권12호
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    • pp.1992-1999
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    • 2016
  • The plasma process is applied to various industrial fields such as high-tech IT industry, textiles and medical. Therefore, there is increasing interest in the plasma power supply, and demand for power devices of high efficiency and high power density is increased. Plasma power supply for process must solve the arc problem, when the plasma is unstable. The output capacitor is closely related to the arc problem. If the output capacitor is smaller, the damage from the arc problem is reduced. However, the small value of the output capacitor affects the operating characteristics of the power supply. In this paper, a LLC resonant converter is adopted, because it can achieve high efficiency and power density in the plasma DC power supply. However, due to the small value of the output capacitor, the converter is operated as a LLCC resonant converter. Therefore, a gain characteristic of LLCC resonant converter is analyzed by using the FHA (First Harmonic Approximation) in plasma power supply. Simulation and experimental results are presented to verify the characteristic analysis of LLCC Resonant Converter.

A High-Efficiency High-Power Step-Up Converter with Low Ripple Content

  • Kang Jeong-il;Roh Chung-Wook;Moon Gun-Woo;Youn Myung-Joong
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.708-712
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    • 2001
  • A new phase-shifted parallel-input/series-output (PI SO) dual inductor-fed push-pull converter for high-power step­up applications is proposed. This converter is operated at a constant duty cycle and employs an auxiliary circuit to control the output voltage with a phase-shift between the two modules. It features a voltage conversion characteristic which is linear to changes in the control input, and high step-up ratio with a greatly reduced switch turn-off stress resulting in a significant increase in the converter efficiency. It also shows a low ripple content and low root-mean-square (RMS) current in the output capacitor. The operational principle is analyzed and a comparative analysis with the conventional pulse-width-modulated (PWM) PISO dual inductor-fed push-pull converter is presented. A 50kHz, 800W, 350Vdc prototype with an input of 20-32Vdc has also been constructed to validate the proposed converter. The proposed converter compares favorably with the conventional counterpart and is considered well suited to high-power step-up applications.

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광대역 특성을 가지는 고출력 펄스 전력 증폭기 구현에 관한 연구 (A Study on the Implementation of High Power Pulse Amplifier with wide-band characteristic)

  • 이경학
    • 한국위성정보통신학회논문지
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    • 제11권1호
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    • pp.1-5
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    • 2016
  • 본 논문에서는 L-Band 대역의 항행안전시설(DME, TACAN)에 적용 가능한 광대역 High power pulsed amplifier를 구현하였다. L-Band 대역의 항행안전시설의 특성상 구현된 SSPA는 매우 높은 출력과 선형성, 효율 특성을 요구한다. 이에 본 논문에서는 변형된 class F 기법을 이용하여 효율 특성을 개선하였다. 또한 hybrid coupler를 이용한 Balance 구조와 구동부 증폭단의 비선형 특성을 이용한 anti-phase 기법, 출력부 harmonic trap 등을 이용하여 선형 특성을 개선하였다. 구현된 SSPA는 약 300MHz의 대역폭을 가지며, 1.5KW 출력과 55%의 효율 특성을 보였다.

고승압비를 갖는 전압 클램프 탭인덕터 부스트 컨버터 (Voltage Clamped Tapped-Inductor Boost Converter with High Voltage Conversion Ratio)

  • 강정민;이상현;홍성수;한상규
    • 전력전자학회논문지
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    • 제17권1호
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    • pp.34-40
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    • 2012
  • In this paper, voltage clamped tapped-inductor boost converter with high voltage conversion ratio is proposed. The conventional tapped-inductor boost converter has a serious drawback such as high voltage stresses across all power semiconductors due to the high resonant voltage caused by the leakage inductor of tapped inductor. Therefore, the dissipative snubber is essential for absorbing this resonant voltage, which could degrade the overall power conversion efficiency. To overcome these drawbacks, the proposed converter employs a voltage clamping capacitor instead of the dissipative snubber. Therefore, the voltage stresses of all power semiconductors are not only clamped as the output voltage but the power conversion efficiency can also be considerably improved. Moreover, since the energy stored in the clamp capacitor is transferred to the output side together with the input energy, the proposed converter can achieve the higher voltage conversion ratio than the conventional tapped-inductor boost converter. Therefore, the proposed converter is expected to be well suited to various applications demanding the high efficiency and high voltage conversion ratio. To confirm the validity of the proposed circuit, the theoretical analysis and experimental results of the proposed converter are presented.

A Novel Auxiliary Edge-Resonant Snubber-Assisted Soft Switching PWM High Frequency Inverter with Series Capacitor Compensated Resonant Load for Consumer Induction Heating

  • Ahmed Nabil A.;Iwai Toshiaki;Omori Hideki;Lee Hyun-Woo;Nakaoka Mutsuo
    • Journal of Power Electronics
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    • 제6권2호
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    • pp.95-103
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    • 2006
  • In this paper, a novel prototype of auxiliary switched capacitor assisted voltage source soft switching PWM Single-Ended Push Pull (SEPP) series capacitor compensated load resonant inverter with two auxiliary edge resonant lossless inductor snubbers is proposed and discussed for small scale consumer high-frequency induction heating (IH) appliances. The operation principle of this inverter is described by using switching mode equivalent circuits. The newly developed multi resonant high-frequency inverter using trench gate IGBTs can regulate its output AC power via constant frequency edge-resonant associated soft switching commutation by using an asymmetrical PWM control or duty cycle control scheme. The brand-new consumer IH products which use the newly proposed edge-resonant soft switching PWM-SEPP type series load resonant high-frequency inverters are evaluated using power regulation characteristics, actual efficiency vs. duty cycle and input power vs. actual efficiency characteristics. Their operating performance compared with some conventional soft switching high-frequency inverters for IH appliances is discussed on the basis of simulation and experimental results. The practical effectiveness of the newly proposed soft switching PWM SEPP series load resonant inverter is verified from an application point of view as being suitable for consumer high-frequency IH appliances.

HIGH POWER, HIGH BRIGHTNESS PROTON ACCELERATORS

  • Lee, Yong-Yung
    • Nuclear Engineering and Technology
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    • 제37권5호
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    • pp.433-446
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    • 2005
  • The development of accelerator science and technology has been accommodating ever increasing demand from scientific community of the beam energy and intensity of proton beams. The use of high-powered proton beams has extended from the traditional application of nuclear and high-energy physics to other applications, including spallation neutron source replacing nuclear reactor, nuclear actinide transmutation, energy amplification reactors. This article attempts to review development of proton accelerator, both linear and circular, and issues related to the proton beam energy, intensity as well as its output power. For related accelerator physics and technical review, one should refer to the recent article in the Reviews of Modem Physics [1]