• Title/Summary/Keyword: High Efficiency-Doherty

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Design of the PAM with High Linearity and Efficiency for Wibro (고선형성, 고효율의 Wibro용 PAM 설계)

  • Oh Inn-Yeal;Kim Tae-Soo;Rhe Kun-Moo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.6 s.109
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    • pp.519-528
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    • 2006
  • This thesis is regarding of fabricating wibro PAM. First of all, we need to set specification based on link budget for wibro communication circumstance in order to develop PAM, then we decided specification concerning of wibro PAM by considering TTAS_Ko_06_0082R1 which is standarded in Korea, and IEEE Std. 802. 16d/e which is international standard. We selected the Doherty structure to increase efficiency, and pre-distorter structure to increase linearity. The fabricated PAM has not only a result of $26.5dB{\pm}1.0dB$ gain characteristics and maximum of -14 dB return loss characteristics in full frequency bands and full output ranges, but also a result of 37 dBc at 4 tone IMD characteristics which is improved result of 843 and a result of 31 dBc spurious characteristics which is improved result of 5 dB at 4.77 MHz offset point in status of having 27 % efficiency in the 26 dBm high power amplifier output signal. We confirmed the suggested structure is better than others by comparing with normal structure, balanced structure and Doherty structure without predistorter.

Doherty Amplifier Design Using a Compact Slow-Wave Microstrip Branch-Line coupler for Linearity Improvement (Compact Slow-Wave Microstrip Branch-Line Coupler를 이용한 도허티 증폭기의 선형성 개선)

  • Kim, Tae-Hyung;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.9
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    • pp.55-59
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    • 2008
  • In this paper, the linearity of Doherty amplifier has been improved by applying a compact slow-wave microstrip branch-line coupler on the output of Doherty amplifier. The proposed branch coupler has four microstrip high-low impedance resonant cells periodically placed inside the branch-line coupler to result in high slow-wave effect. The new coupler not only effectively reduces the occupied area to 30% of the conventional branch-line coupler at 1.8GHz, but also has high second harmonic suppression performance. We obtained the 3rd-order intermodulation distortion ($IMD_3$) of -31.16 dBc for CDMA applications with that of maintaining the constant power added efficiency (PAE). The IMD3 performance is improved as much as -7 dBc compared with a Doherty amplifier.

Highly Linear 2-Stage Doherty Power Amplifier Using GaN MMIC

  • Jee, Seunghoon;Lee, Juyeon;Kim, Seokhyeon;Park, Yunsik;Kim, Bumman
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.399-404
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    • 2014
  • A power amplifier (PA) for a femto-cell base station should be highly efficient, linear and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal was improved by designing an asymmetric Doherty PA (DPA). The linearity was improved by applying third-order inter-modulation (IM3) cancellation method. A small size is achieved by designing the DPA using GaN MMIC process. The implemented 2-stage DPA delivers a power-added efficiency (PAE) of 38.6% and a gain of 33.4 dB with an average power of 34.2 dBm for a 7.2 dB PAPR 10 MHz bandwidth LTE signal at 2.14 GHz.

Research on PAE and Linearity of Power Amplifier Using EER and PBG Structure (EER 및 PBG를 이용한 전력 증폭기의 효율 및 선형성 개선에 관한 연구)

  • Lee, Chong-Min;Seo, Chul-Hun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.6 s.121
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    • pp.584-590
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    • 2007
  • In this paper, the efficiency of power amplifier has been maximized by the application of EER structure, and the linearity has been improved by using PBG structure. This paper has proposed a design of power amplifier in class-F to get the PAE, and to control dynamic power using envelope detector. PBG structure gets high-linearity by removing harmonics arisen from the mismatching of matching circuit. The PAE and the 3rd order IMD have been improved 34.64%, 6.65 dB compared with those of conventional Doherty amplifier, respectively.

Design of a High Power Asymmetric Doherty Amplifier with a Linear Dynamic Range Characteristic (선형적인 동적 영역 특성을 갖는 고출력 비대칭 도허티 전력 증폭기의 설계)

  • Lee Ju-Young;Kim Ji-Yeon;Lee Dong-Heon;Kim Jong-Heon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.6 s.109
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    • pp.538-545
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    • 2006
  • In this paper, an asymmetric high power extended Doherty amplifier for WCDMA base-station applications is presented. The amplifier has an extended peak efficiency over 9 dB of output power and a linear dynamic range characteristic. To realize the peak efficiency extension and linear dynamic range characteristic, a two times larger peaking device compared to the main device, and an unequal power divider are used. From the experimental results of 1FA WCDMA signal, this amplifier has an efficiency of 31 % and an ACLR of -35 dBc is achieved at 9 dB back-off from P1 dB.

Gate-Bias Control Technique for Envelope Tracking Doherty Power Amplifier (Envelope Tracking 도허티 전력 증폭기의 Gate-Bias Control Technique)

  • Moon, Jung-Hwan;Kim, Jang-Heon;Kim, Il-Du;Kim, Jung-Joon;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.8
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    • pp.807-813
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    • 2008
  • The gate-biases of the Doherty power amplifier are controlled to improve the linearity performance. The linearity improvement mechanism of the Doherty amplifier is the harmonic cancellation of the carrier and peaking amplifier at the output power combining point. However, it is difficult to cancel the harmonic power for the broader power range because the condition for cancelling is varied by power. For the linearity improvement, we have explored the linearity characteristic of the Doherty amplifier according to the input power and gate biases of the carrier and peaking amplifier. To extend the region of harmonic power cancellation, we have injected the proper gate bias to the carrier and peaking amplifier according to the input power levels. To validate the linearity improvement, the Doherty amplifier is designed using Eudyna 10-W PEP GaN HEMT EGN010MKs at 2.345 GHz and optimized to achieve a high linearity and efficiency at an average output power of 33 dBm, backed off about 10 dB from the $P_{1dB}$. In the experiments, the envelope tracking Doherty amplifier delivers a significantly improved adjacent channel leakage ratio performance of -37.4 dBc, which is an enhancement of about 2.8 dB, maintaining the high PAE of about 26 % for the WCDMA 1-FA signal at an average output power of 33 dBm. For the 802.16-2004 signal, the amplifier is also improved by about 2 dB, -35 dB.

Design of Doherty Amplifier With Push-Pull Structure Using BALUN Transform (발룬을 이용한 푸쉬풀 구조의 도허티 증폭기 설계)

  • 정형태;김성욱;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.4
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    • pp.51-58
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    • 2004
  • Push-pull structure with balun transformer is presented for load modulation technique which improves the overall efficiency of power amplifier Under the assumption that output impedance of fumed-off amplifier is high, conventional Doherty amplifier is composed of impedance inverter and peaking amplifier, of which operation is controlled by the input power level. In many case, however, impedance of 'off'amplifier is very low due to matching network or parasitic output capacitance. This paper introduces novel load modulation technique which uses low output impedance of 'off'amplifier. Experimental results show that good linearity and efficient!'enhancement of the proposed push-pull structure

Design of a Highly Integrated Palette-type High Power Amplifier Module Using GaN Devices for DPD Application (질화갈륨 소자를 이용한 DPD용 고집적 팔렛트형 고출력증폭기 모듈 설계)

  • Oh, Seong-Min;Lim, Jong-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.5
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    • pp.2241-2248
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    • 2011
  • This paper describes the design of a palette-type 60watt high power amplifier module using gallium nitride(GaN) devices with high power and efficiency performances for WiMAX and LTE systems. The line-up for the high gain amplifier module consists of the pre-amplifier stage with low power and high gain, 8watt GaN driving amplifier stage, and 60watt GaN high power amplifier stage of Doherty structure with two 30watt GaN devices. The obtained gain is 61.4dB with an excellent gain flatness of ${\pm}$0.075dB over 2.5~2.68GHz. GaN devices and the Doherty structure are adopted for the improvement of high efficiency and output power. The measurement for the fabricated high power amplifier module of palette type is performed using the widely known WiMAX signal all over the world. In the example of RRH(remote radio head) application of the fabricated amplifier module, the measured efficiency is 37~38% with the 10watts of modulated output power. It is shown that when the fabricated amplifier module is activated with a digital predistorter(DPD), the measured ACLR is better than 46dBc under the 10watts of modulated output power.

Design of a Doherty Power Amplifier Using the Spiral PBG Structure for Linearity Improvement (나선형 구조의 PBG를 적용한 도허티 전력증폭기의 선형성 개선)

  • Kim, Sun-Young;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.1
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    • pp.115-119
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    • 2008
  • In this paper, the linearity of Doherty power amplifier has been improved by applying a new Photonic Bandgap(PBG) structure on the output of amplifier. The reposed spiral PBG structure is a two-dimensional(2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure has more broad stopband and high suppression performance than the conventional three cell PBG. Also, It has a sharp skirt property. We obtained the 3rd-order intermodulation distortion(IMD3) of -33dBc for CDMA applications with that of maintaining the constant power added efficiency(PAE), the IMD3 performance is improved as much as -8 dB compared with a Doherty power amplifier without PBG structure. Moreover, the physical length of PBG is shortened, therefore the whole amplifier circuit size is considerably reduced.