• Journal of Magnetics
• /
• 제12권4호
• /
• pp.141-143
• /
• 2007

We have fabricated (0001) oriented hexagonal $HoMnO_3$ thin films with thickness of 300 nm using Pulsed Laser Deposition (PLD) technique on $Pt(111)/Ti/SiO_2/Si$ substrates. The XRD $\theta-2\theta$ pattern shows only (0002), (0004), and (0008) reflection of a hexagonal phase, and the full width at half maximum (FWHM) of (0004) peak is under $1.6^{\circ}$. The chemical state of Mn from XPS spectra of the films reveals the presence of $Mn^{3+}$ only. The temperature dependence of dielectric constant shows a weak anomaly at magnetic $N\acute{e}el$ temperature $(T_N)$, which is about 70 K.

• Journal of the Optical Society of Korea
• /
• 제19권5호
• /
• pp.503-507
• /
• 2015

Using the reflectivity mode of an optical microscope, we analyzed the optical contrast to identify the layer number of flakes of hexagonal boron nitride on a $SiO_2$/Si substrate. Overall optical contrast in the visible range varies with the thickness of flakes. However, the wavelength of zero contrast exhibits a linear redshift of 0.53 nm per layer, independent of the $SiO_2$ thickness, and increases proportionally with $SiO_2$thickness. Experiments show good agreement with calculations and the results of AFM measurements. These results show that this zero-contrast approach is more accurate and easier than the reflectivity-contrast approach using the overall optical contrast.

• 한국전기전자재료학회논문지
• /
• 제13권6호
• /
• pp.545-550
• /
• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• 한국주조공학회지
• /
• 제14권5호
• /
• pp.464-470
• /
• 1994

The horizontal continuous casting method with the heated mold was applied to study the solidification structures of the pure Al and Al-0.5wt%Si and Al-1.0wt%Si alloy rods. The results could be summarized as follows: 1. The S/L interface structures of pure Al represented the hexagonal cells at the casting speed of 590 and 350mm/min, respectively. However, the hexagonal cells became irregular as the casting speed and(or) Si amount increased. 2. The striation increased as the Si amount and casting speed increased and was found to result from the occurrence of growth twin crystals by XRD analysis. 3. The striation did not affect the mechanical and electrical property of the drawn wire from the casted rod. This means the striation is not a serious defect which has to consider in the production of micro-sized fine wire in the drawing process.

• 한국세라믹학회지
• /
• 제33권3호
• /
• pp.362-370
• /
• 1996

Kalsilite (KAlSiO4) system undergoes a displacive phase transition from hexagonal phase with p63 space group to the phase with P63mc at 886$^{\circ}C$. The flux composition having kalsilite :K2O:B2O3=1:2:2 has enabled the growth of hexagonal kalsilite with the size of 0.5~1 mm at a slow cooling rate (0.3$^{\circ}C$/hr). On decreasing the cooling rate the size has increased and pyramidal (1011) faces are newly developed with the shape of (0001) and (1010) faces. Upon stirring (1011) faces are degraded. The space group of O1 and O2 are P21221 and C2221 respectively. Their orthorombic modification O1 and O2 are synthesized at relatively low and high temperature respectively.

• Applied Science and Convergence Technology
• /
• 제24권6호
• /
• pp.268-272
• /
• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2003년도 제24회 학술발표회 초록집
• /
• pp.172-172
• /
• 2003

• 한국자기학회지
• /
• 제16권3호
• /
• pp.178-181
• /
• 2006

본 연구에선는 수직 Bridgman 법으로 묽은 자성 반도체 $Si_{1-x}Mn_xTe_{1.5} $ 단결정을 성장시켜 Mn의 조성비 변화에 따른 광학적, 전지적, 그리고 자기적 특성을 조사하였다. X-선 회절 실험으로부터 육방정계(hexagonal) 구조임을 확인하였다. 광흡수 측정으로부터 에너지 띠 간격은 조성비 x와 온도 증가에 대하여 감소함을 보였다. 성장시킨 시료의 경우 강자성 특성을 나타내었으며, Curie 온도는 80K 이상이었다. Mn의 조성비가 증가함에 따라 평균 자기 모멘트와 보자력 값은 증가하였다.

• 한국세라믹학회지
• /
• 제39권5호
• /
• pp.438-445
• /
• 2002

본 연구에서는 $PbO-TiO_2-SiO_2-BaO-ZnO-Al_2O_3-CaO-B_2O_3-Bi_2O_3-MgO$계의 유리를 $1,400{\circ}C$에서 용융시킨 후, 급랭, 분쇄하여 glass frit을 제조하였다. Glass frit 분말을 일축가압성형한 후 $750~1,000{\circ}C$의 온도범위에서 2시간 동안 소성 및 결정화 하였다. Glass frit의 결정화는 $750{\circ}$ 전후의 온도에서 시작되었고, 저온에서의 주된 결정상은 $Al_2O_3$와 hexagonal celsian($BaAl_2Si_2O_8$)이었다. 소성온도가 높아지면서 monoclinic celsian, $ZnAl_2O_4,\;Zn_2SiO_4,\;CaTi(SiO_4)O,\;TiO_24 등이 주된 결정상으로 나타났고, 특히 celsian은 hexagonal에서 monoclinic으로 상전이가 발생하였다. 그리고 15wt%의 PbO를 첨가한 glass frit에만 $PbTiO_3-CaTiO_3$ 고용체가 나타났다. 1MHz 대역에서 유전특성을 살펴본 결과 유전상수는 11~16이었고, 유전손실은 0.020 미만이었다. 그러나 15wt%의 PbO를 첨가한 glass frit의 경우는 $PbTiO_3-CaTiO_3$ 고용체 결정상의 존재로 유전상수가 17~26으로 높았고, 유전손실은 0.010~0.015로서 다른 조성들에 비하여 우수한 특성을 나타내었다.

• 한국재료학회지
• /
• 제16권6호
• /
• pp.394-399
• /
• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.