• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.285-286
• /
• 2005

Organic photovoltaic properties were studied in ZnPc/$C_{60}$ heterojunction structure by varying the organic layer thicknesses and exiton blocking layer(EBL). Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit, a 500W xenon lamp (ORIEL 66021) for a light source and Agilent 4294A impedance analyzer in the range of 40 Hz $\sim$ 1 MHz. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained and frequency response such as electrical conductance.

• Journal of the Korean Vacuum Society
• /
• v.21 no.6
• /
• pp.322-327
• /
• 2012

The strain effects of ZnSe epilayer on ZnSe/GaAs heterojunction structure grown by molecular beam epitaxy have been investigated by using electroreflectance (ER) spectroscopy. The ER measurements were performed as a function of modulation voltage, dc bias voltage, and temperature. From the room temperature ER spectrum, we observed a heavy-hole (HH: 2.609 eV) and light-hole (LH: 2.628 eV) transitions due to a compressive strain. With increasing the bias voltage, the amplitude of HH transition signal decreased and the amplitude of LH transition signal was almost the same. From the temperature dependence of ER spectra, we have studied the interaction between the strain and the thermal expansion coefficient.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.313-313
• /
• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.452-452
• /
• 2011

Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

• Korean Journal of Materials Research
• /
• v.25 no.4
• /
• pp.171-176
• /
• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.20 no.6
• /
• pp.558-565
• /
• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.505-506
• /
• 2007

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc/$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL 14004).

• Journal of Industrial and Engineering Chemistry
• /
• v.67
• /
• pp.28-51
• /
• 2018

Graphitic carbon nitride ($g-C_3N_4$) as a fascinating visible light active semiconductor photocatalyst has medium band gap, non-toxic nature, stable chemical structure and high thermal stability. Recently, intensive researches are focused on photocatalytic activity of $g-C_3N_4$ for wastewater treatment. This review demonstrates latest progress in fabrication of graphitic carbon nitride $C_3N_4$ incorporated nanocomposite to explore photocatalytic ability for water purification. The $g-C_3N_4$-based nanocomposites were categorized as $g-C_3N_4$ metal-free nanocomposite, noble metals/$g-C_3N_4$ heterojunction, non-metal doped $g-C_3N_4$, transition and post transition metal based $g-C_3N_4$ nanocomposite. Apart from fabrication methods, we emphasized on elaborating the mechanism of activity enhancement during photocatalytic process.

• Journal of IKEEE
• /
• v.24 no.4
• /
• pp.1167-1171
• /
• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.6
• /
• pp.252-259
• /
• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.