• 제목/요약/키워드: Hetero junction

검색결과 88건 처리시간 0.021초

수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용 (Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells)

  • 박준형;명승엽;이가원
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.1009-1014
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    • 2012
  • Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

Gate-modulated SWCNT/SnO2 nanowire hetero-junction arrays on flexible polyimide substrate

  • 박재현;배민영;하정숙
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.273-273
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    • 2010
  • Recently, extensive research on hetero-junction arrays has been reported owing to its unique band gaps dissimilar to that of homo-junctions. These hetero-junction devices can be used in laser, solar cells, and various sensors. We report on the facile method to fabricate SWCNTs/SnO2 nanowires hetero-junction arrays on flexible polyimide substrate. Each SWCNT field effect transistor (FET) and SnO2 nanowire FET exhibits the purely p- and n-type charactersistics with ohmic contact properties. Such formed pn-junctions showed rectification behaviors reproducibly with a rectification ratio of ${\sim}3{\times}103$ at 1 V and ideality factors about 12. The pn-junctions also showed a good gate modulation behavior.

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LTCC를 위한 NiCuZn 페라이트계와 유전체의 이종접합의 특성 (The Characteristics of Hetero Junction Using NiCuZn Ferrite and Dielectric for LTCC)

  • 김남현;박현;김경남
    • 한국표면공학회지
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    • 제45권5호
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    • pp.188-192
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    • 2012
  • The hetero junction on dielectrics and ferrite for LTCC was prepared by using NiCuZn ferrite. The shrinkage behaviour of ferrite tapes in combination with a dielectric tape was investigated. The characteristics of NiCuZn ferrite were investigated using XRD (X-ray diffractometer), Dilatometer, FE-SEM (Field emission scanning electron microscope), EDS (Energy dispersive spectrometer). NiCuZn ferrite calcined at $700^{\circ}C$ had a good apparent density and initial permeability of magnetic properties. The shrinkage rate of the NCZF700 ferrite and dielectric material was similar. The multilayer revealed dense, uniform morphologies with excellent interface quality. Diffusion of hetero junction such as dielectric and ferrite was not occuring at $900^{\circ}C$.

저온 공정에 의한 a-Si:H/c-Si 이종접합 태양전지 제조 및 동작특성 분석 (Process and Performance Analysis of a-Si:H/c-Si Hetero-junction Solar Sells Prepared by Low Temperature Processes)

  • 임충현;이정철;전상원;김상균;김석기;김동섭;양수미;강희복;이보영;송진수;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2005년도 춘계학술대회
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    • pp.196-200
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    • 2005
  • In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

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HWCVD 계면 보호층을 적용한 실리콘 이종접합 태양전지 연구 (Silicon Heterojunction Solar Cell with HWCVD Passivation Layer)

  • 박상현;정대영;김찬석;송준용;조준식;이정철;최덕균;윤경훈;송진수
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.346-346
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    • 2009
  • For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.

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헤테르접합을 이용한 누설전류 저감을 위한 다층구조의 방사선 검출 물질 개발 (Radiation detector material development with multi-layer by hetero-junction for the reduction of leakage current)

  • 오경민;윤민석;김민우;조성호;남상희;박지군
    • 한국방사선학회논문지
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    • 제3권1호
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    • pp.11-15
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    • 2009
  • 본 연구에서는 헤테로 접합을 이용하여 누설전류를 저감 시키는 기술을 적용하여 Particle-In -Binder을 이용한 방사선 영상 센서의 변환 물질을 개발하였다. 이는 디지털 방사선 영상 검출기의 두 가지 방식 중 하나인 직접방식에 사용되는 핵심 소자로 기존의 비정질 셀레늄(Amorphous Selenium)을 대체하여 더욱 효율이 높은 후보 물질들이 연구되어지는 가운데 태양전지와 반도체 분야에서 이미 많이 사용되어온 이종접합(Hetero junction)을 이용해 누설 전류를 저감 시키는데 그 목적이 있다. 본 연구에서 사용되는 Particle-In -Binder 제작 방법은 검출 물질 제작이 용이하고 높은 수율과 대면적의 검출기 제작에 적합하나 높은 누설 전류가 의료 영상 시스템에 있어서 문제가 되어 오고 있다. 이러한 단점을 보완하기 위해 다층 구조를 이용하여 누설 전류를 저감시킨다면 Particle-In -Binder을 이용하여 간편하게 향상된 효율의 디지털 방사선 검출기를 제작 할 수 있다고 사료 되어 진다. 본 연구에서는 누설전류 및 민감도, 그리고 선형성에 대한 전기적 신호를 측정하여 제작된 다층 구조의 방사선 검출 물질의 특성 평가가 이루어 졌다.

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탄소나노튜브/V2O5 나노선 헤테로 구동소자 특성연구 (MWCNTs/V2O5 Nanowire Hetero-junction Actuator Devices)

  • 이강호;이성민;박소정;허정환;김규태;박성준;하정속
    • 한국전기전자재료학회논문지
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    • 제19권3호
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    • pp.250-254
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    • 2006
  • Hetero-junction sheet actuator composed of carbon nanotubes and $V_{2}O_5$ nanowires were demonstrated in a bimetal configuration. The successive filtration of $V_{2}O_5$ nanowire solution followed by carbon nanotube dispersed water solution in the same way produced a dark-gray colored sheet. A significant actuation was observed in sodium chloride electrolyte solution with a bending direction to the carbon nanotube side at the positive bias voltage against the copper counter-electrode. As the frequency of the applied voltage increased, the amplitudes decreased, indicating a rather slow response of the hetero-film actuator in the electrolyte solution. The hybrid structure enabled an easy fabrication of the film actuator with the enhanced efficiencies.

Numerical Simulation of Phase Separation in Bulk Hetero-junction Photoactive Layer

  • Hang, Nguyen Thi;Van Thuong, Dinh;Nhat, Hoang Nam;Van Chau, Dinh
    • International Journal of Advanced Culture Technology
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    • 제4권1호
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    • pp.31-36
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    • 2016
  • Morphology evolution of the active layer in bulk hetero-junction organic photovoltaic is modeled and visualized. The width of the phase domain can be predicted using the relationship of characteristics length and evolution time of the process. The 3D numerical simulation of the PCBM/P3HT blend morphology evolution with respect to time is presented. It is observed that the domain width of composition phase can be predicted by using the relationship between value of characteristic length R(t) and evolution time t.

Spectroscopic Ellipsometer를 이용한 a-Si:H/c-Si 이종접합 태양전지 박막 분석 (A Novel Analysis Of Amorphous/Crystalline Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometer)

  • 지광선;어영주;김범성;이헌민;이돈희
    • 신재생에너지
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    • 제4권2호
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    • pp.68-73
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    • 2008
  • It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

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