• Title/Summary/Keyword: Hetero junction

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Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells (수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용)

  • Park, Jun-Hyoung;Myong, Seung-Yeop;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.12
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    • pp.1009-1014
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    • 2012
  • Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

Gate-modulated SWCNT/SnO2 nanowire hetero-junction arrays on flexible polyimide substrate

  • Park, Jae-Hyeon;Bae, Min-Yeong;Ha, Jeong-Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.273-273
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    • 2010
  • Recently, extensive research on hetero-junction arrays has been reported owing to its unique band gaps dissimilar to that of homo-junctions. These hetero-junction devices can be used in laser, solar cells, and various sensors. We report on the facile method to fabricate SWCNTs/SnO2 nanowires hetero-junction arrays on flexible polyimide substrate. Each SWCNT field effect transistor (FET) and SnO2 nanowire FET exhibits the purely p- and n-type charactersistics with ohmic contact properties. Such formed pn-junctions showed rectification behaviors reproducibly with a rectification ratio of ${\sim}3{\times}103$ at 1 V and ideality factors about 12. The pn-junctions also showed a good gate modulation behavior.

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The Characteristics of Hetero Junction Using NiCuZn Ferrite and Dielectric for LTCC (LTCC를 위한 NiCuZn 페라이트계와 유전체의 이종접합의 특성)

  • Kim, Nam Hyun;Park, Hyun;Kim, Kyung Nam
    • Journal of the Korean institute of surface engineering
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    • v.45 no.5
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    • pp.188-192
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    • 2012
  • The hetero junction on dielectrics and ferrite for LTCC was prepared by using NiCuZn ferrite. The shrinkage behaviour of ferrite tapes in combination with a dielectric tape was investigated. The characteristics of NiCuZn ferrite were investigated using XRD (X-ray diffractometer), Dilatometer, FE-SEM (Field emission scanning electron microscope), EDS (Energy dispersive spectrometer). NiCuZn ferrite calcined at $700^{\circ}C$ had a good apparent density and initial permeability of magnetic properties. The shrinkage rate of the NCZF700 ferrite and dielectric material was similar. The multilayer revealed dense, uniform morphologies with excellent interface quality. Diffusion of hetero junction such as dielectric and ferrite was not occuring at $900^{\circ}C$.

Process and Performance Analysis of a-Si:H/c-Si Hetero-junction Solar Sells Prepared by Low Temperature Processes (저온 공정에 의한 a-Si:H/c-Si 이종접합 태양전지 제조 및 동작특성 분석)

  • Lim, Chung-Hyun;Lee, Jeong-Chul;Jeon, Sang-Won;Kim, Sang-Kyun;Kim, Seok-Ki;Kim, Dong-Seop;Yang-Sumi;Kang-Hee-Bok;Lee, Bo-young;Song-Jinsoo;Yoon-Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.196-200
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    • 2005
  • In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

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Silicon Heterojunction Solar Cell with HWCVD Passivation Layer (HWCVD 계면 보호층을 적용한 실리콘 이종접합 태양전지 연구)

  • Park, Sang-Hyun;Jeong, Dae-Young;Kim, Chan-Seok;Song, Jun-Yong;Cho, Jun-Sik;Lee, Jeong-Chul;Choe, Deok-Gyun;Yoon, Kyoung-Hoon;Song, Jin-Soo
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.346-346
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    • 2009
  • For high efficiency hetero junction solar cell over 20%, good silicon wafer passivation is one of the most important technological factor. Compared to the conventional PECVD technique, HWCVD has appeared as an promising alternative for high quality passivation layer formation. In this work, HWCVD passivation layer characteristics have been intensively investigated on wafer surface treatment, Hydrogen density in deposited thin layer and thermal effects in deposition process. Comprehensive results of the individual process factors on interface passivation has been discussed and resultant silicon hetero junction solar cell characteristics has been investigated.

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Radiation detector material development with multi-layer by hetero-junction for the reduction of leakage current (헤테르접합을 이용한 누설전류 저감을 위한 다층구조의 방사선 검출 물질 개발)

  • Oh, Kyung-Min;Yoon, Min-Seok;Kim, Min-Woo;Cho, Sung-Ho;Nam, Sang-Hee;Park, Ji-Goon
    • Journal of the Korean Society of Radiology
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    • v.3 no.1
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    • pp.11-15
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    • 2009
  • In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

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MWCNTs/V2O5 Nanowire Hetero-junction Actuator Devices (탄소나노튜브/V2O5 나노선 헤테로 구동소자 특성연구)

  • Lee Kang-Ho;Yee Seong-Min;Park So-Jeong;Huh Jung-Hwan;Kim Gyu-Tae;Park Sung-Joon;Ha Jeong-Sook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.3
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    • pp.250-254
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    • 2006
  • Hetero-junction sheet actuator composed of carbon nanotubes and $V_{2}O_5$ nanowires were demonstrated in a bimetal configuration. The successive filtration of $V_{2}O_5$ nanowire solution followed by carbon nanotube dispersed water solution in the same way produced a dark-gray colored sheet. A significant actuation was observed in sodium chloride electrolyte solution with a bending direction to the carbon nanotube side at the positive bias voltage against the copper counter-electrode. As the frequency of the applied voltage increased, the amplitudes decreased, indicating a rather slow response of the hetero-film actuator in the electrolyte solution. The hybrid structure enabled an easy fabrication of the film actuator with the enhanced efficiencies.

Numerical Simulation of Phase Separation in Bulk Hetero-junction Photoactive Layer

  • Hang, Nguyen Thi;Van Thuong, Dinh;Nhat, Hoang Nam;Van Chau, Dinh
    • International Journal of Advanced Culture Technology
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    • v.4 no.1
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    • pp.31-36
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    • 2016
  • Morphology evolution of the active layer in bulk hetero-junction organic photovoltaic is modeled and visualized. The width of the phase domain can be predicted using the relationship of characteristics length and evolution time of the process. The 3D numerical simulation of the PCBM/P3HT blend morphology evolution with respect to time is presented. It is observed that the domain width of composition phase can be predicted by using the relationship between value of characteristic length R(t) and evolution time t.

A Novel Analysis Of Amorphous/Crystalline Silicon Heterojunction Solar Cells Using Spectroscopic Ellipsometer (Spectroscopic Ellipsometer를 이용한 a-Si:H/c-Si 이종접합 태양전지 박막 분석)

  • Ji, Kwang-Sun;Eo, Young-Ju;Kim, Bum-Sung;Lee, Heon-Min;Lee, Don-Hee
    • New & Renewable Energy
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    • v.4 no.2
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    • pp.68-73
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    • 2008
  • It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

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