• 한국추진공학회지
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• 제14권1호
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• pp.20-28
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• 2010

스크램제트 연소기 내 파일런 분사기의 연료-공기 혼합특성을 살펴보았으며, 공력가열로부터 파일런을 보호하기 위한 막냉각의 효과를 조사하였다. 수치연구를 위하여 3차원 Navier-Stokes 방정식과 $k-{\omega}$ SST 난류 모델을 이용하였다. 연료인 수소와 공기를 냉각 유체로 고려하였다. 파일런 분사기를 이용하는 경우 침투거리가 증대되고, 혼합률도 주목할 만큼 증대되었으나, 공력가열에 의한 파일런의 전방 표면 과열을 확인하였다. 파일런 전방에 파일런 표면에 평행한 냉각 제트를 분사하는 막냉각을 이용하면 파일런 표면의 과열을 막을 수 있음을 확인하였다.

• 한국정밀공학회지
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• 제13권5호
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• pp.53-59
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• 1996

Warm deep drawing of single-action dies using local heating has appeared to be an alternative attractive production method of multi-operation die sets generally used at room temperature in deep drawing of rectangular cup. Uniaxial tensile tests and deep drawing tests of various materials are carried out and the effect of temperature on tensile properties and drawability are examined at temperatures up to 200 .deg. C under three kinds of lubricants of teflon film, vinyl film and drawing oil. Good formability is achieved when punch and die temperature were differentiated intentionally in order to get large tensile strength(TS) at punch shoulder protion and small TS at die side. Throughout the experiments, it has been shown that the limiting drawing height of STS316L was increased with heating die and blank holder at 100 .deg. C, but that of STS430 wasn't. When vinyl or teflon film was attached on the plates, the drawability was increased considerably.

• International Journal of Air-Conditioning and Refrigeration
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• 제10권1호
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• pp.1-9
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• 2002

Effects of temperature coefficients fur dielectric constants on transient reflectances and thermal responses have been investigated for a metal(gold) thin-film during ultrashort pulse laser heating. Heating processes are simulated using the conventional conduction model(parabolic one-step, POS), the parabolic tow-step model(PTS), the hyperbolic two-step model(HTS). Results fro the HTS model are very similar to those from the PTS model, since the laser heating time in this study is considerably greater than the electron relaxation time. PTS and HTS models, however, result in completely different temperature profiles from those obtained by the POS model due to slow electron-lattice interactions compared to laser pulse duration. Transient reflectances are directly estimated from the linear relationship between electron temperature and complex dielectric constants, while conventional approaches assume that the change in reflectances is proportional to that in temperatuer. Reflectances at the front surface vary considerably for various dielectric constants, while those at the rear surface remain unchanged relatively.

• 한국표면공학회지
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• 제47권1호
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• 대한기계학회논문집B
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• 제33권10호
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• pp.820-826
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• 2009

The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.

• 대한기계학회논문집A
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• 제31권2호
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• pp.253-259
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• 2007

A new material tester has been developed to measure mechanical properties of thin film specimens at high temperature. It is useful for observing oxide film growth or local deformation on the surface, and for measuring creep strength. Main characteristics of the tester is as follows; First, high temperature is achieved by Joule heating generated by electricity passing through the specimen, which does not need to enclose the specimen by a furnace or a heating chamber. The exposed specimen enables one to observe the surface during the test. Because the overall size of the test rig is compact, the whole test rig can be placed in a chamber for environmental controlled tests. The loading device is from a level scales. Not only static load with fixed counter weight, but also variable load by moving counter weight controlled remotely can be applied for an ordinary creep test and creep-fatigue test, respectively. The detail of the construction, operation principle, and the specification are described. And also, an example of test result obtained using the creep tester is presented.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.915-918
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• 2007

We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

• Nuclear Engineering and Technology
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• 제55권7호
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• pp.2454-2465
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• 2023

Film boiling may lead to burnout of the heating element. Even though burnout does not occur, the heating element is subject to deformation because it is not sufficiently strong to withstand external loads. In particular, the ballooning and rupture of a tube under film boiling are important phenomena in the field of nuclear reactor safety. If the tube-type cladding of nuclear fuel ruptures owing to high internal pressure and thermal load, radioactive materials inside the cladding are released to the coolant. Therefore, predicting the ballooning and rupture is important. This study presents numerical simulations to predict the ballooning behavior and rupture time of a horizontal tube at high internal pressure under saturated film boiling. To do so, a multi-step coupled simulation of conjugated film boiling heat transfer and ballooning using creep model is adopted. The numerical methods and models are validated against experimental values. Two different nonuniform heat flux distributions and four different internal pressures are considered. The three-step simulation is enough to obtain a convergent result. However, the single-step simulation also successfully predicts the rupture time. This is because the film boiling heat transfer characteristics are slightly affected by the tube geometry related to creep ballooning.

• 한국건축시공학회지
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• 제14권6호
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• pp.583-590
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• 2014

본 연구에서는 경제적인 창호공사 방안을 확인하기 위해 단열필름이 시공된 창호유리와 일반유리의 생애주기비용을 분석하여 비교하고자 하였다. 이를 위해 Window 6.3과 ECO2-OD 시뮬레이션 프로그램을 사용하여 유리 유형별 창호의 열성능 데이터를 측정하고 사례 건물에 적용하여 냉 난방 유지비용 및 LCC를 산출하여 경제성을 비교하였다. 연구결과 단열필름을 추가적으로 시공함으로써, 냉 난방 유지비용 측면에서는 하절기 태양열이 실내로 투과하는 것을 막아 냉방비용 절감 효과가 있지만, 이로 인해 동절기에는 난방비용이 증가하는 것으로 나타났다. 생애주기비용 측면에서 볼 때, 냉방비용 절감 효과가 난방비용 증가량과 필름 시공 및 수선으로 발생하는 추가비용을 상쇄하지 못하기 때문에 단열필름의 시공은 적절한 방법이 아니라고 할 수 있다.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.23-27
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• 2004

본 연구에서는 RF-Magnetron Sputtering 장치를 이용하여 $Al_xTa_{1-x} (x=0.0{\~}1.0)$ 합금박막을 성장하였고, XRD, AFM, 4탐침법 등을 사용하여 시료의 결정질과 표면형상, 그리고 전기적 특성을 분석하였다. Al 조성을 변화시켜서 Al-Ta 합금박막을 증착하고, 그에 따라 얻어진 결과를 토대로 하여 박막 두께별 ,박막의 폭 별로 합금박막을 성장하였다. 또한 heat controller를 사용하여 시료의 발열특성을 분석하였다. 본 연구의 결과 Al-Ta 합금박막은 Al 조성 $x=6.63at\%$에서 가장 높은 전기저항이 나타났고, 박막두께가 얇아지거나 패터닝된 박막의 폭이 좁을수록 더욱 높은 전기저항이 나타났다. 발열온도는 전기저항의 변화추이와 동일한 양상을 보였고, Al 조성 $x=6.63\%$, 박막두께 d=500 nm, 박막폭 w=1.5 mm에서 가장 높은 발열온도 ($400^{\circ}C$)와 출력 ($12.6W/cm^2$)을 나타냈다.