• Title/Summary/Keyword: Heat source system

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Growth and Effect of Thermal Annealing for ZnIn2S4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 열처리 효과)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.318-325
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    • 2008
  • Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T+489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

EXPERIMENTAL INVESTIGATIONS RELEVANT FOR HYDROGEN AND FISSION PRODUCT ISSUES RAISED BY THE FUKUSHIMA ACCIDENT

  • GUPTA, SANJEEV
    • Nuclear Engineering and Technology
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    • v.47 no.1
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    • pp.11-25
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    • 2015
  • The accident at Japan's Fukushima Daiichi nuclear power plant in March 2011, caused by an earthquake and a subsequent tsunami, resulted in a failure of the power systems that are needed to cool the reactors at the plant. The accident progression in the absence of heat removal systems caused Units 1-3 to undergo fuel melting. Containment pressurization and hydrogen explosions ultimately resulted in the escape of radioactivity from reactor containments into the atmosphere and ocean. Problems in containment venting operation, leakage from primary containment boundary to the reactor building, improper functioning of standby gas treatment system (SGTS), unmitigated hydrogen accumulation in the reactor building were identified as some of the reasons those added-up in the severity of the accident. The Fukushima accident not only initiated worldwide demand for installation of adequate control and mitigation measures to minimize the potential source term to the environment but also advocated assessment of the existing mitigation systems performance behavior under a wide range of postulated accident scenarios. The uncertainty in estimating the released fraction of the radionuclides due to the Fukushima accident also underlined the need for comprehensive understanding of fission product behavior as a function of the thermal hydraulic conditions and the type of gaseous, aqueous, and solid materials available for interaction, e.g., gas components, decontamination paint, aerosols, and water pools. In the light of the Fukushima accident, additional experimental needs identified for hydrogen and fission product issues need to be investigated in an integrated and optimized way. Additionally, as more and more passive safety systems, such as passive autocatalytic recombiners and filtered containment venting systems are being retrofitted in current reactors and also planned for future reactors, identified hydrogen and fission product issues will need to be coupled with the operation of passive safety systems in phenomena oriented and coupled effects experiments. In the present paper, potential hydrogen and fission product issues raised by the Fukushima accident are discussed. The discussion focuses on hydrogen and fission product behavior inside nuclear power plant containments under severe accident conditions. The relevant experimental investigations conducted in the technical scale containment THAI (thermal hydraulics, hydrogen, aerosols, and iodine) test facility (9.2 m high, 3.2 m in diameter, and $60m^3$ volume) are discussed in the light of the Fukushima accident.

The effect of thermal annealing and growth of $AgInS_2$/GaAs single crystal thin film by hot wal epitaxy (Hot wall Epitaxy(HWE)법에 의한 $AgInS_2$단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.6
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    • pp.274-284
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    • 2001
  • A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

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Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과)

  • Hong, Myung-Seuk;Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.437-446
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    • 2008
  • Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

Growth and effect of thermal annealing of impurity for $AgGaSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 $AgGaSe_2$ 단결정 박막 성장과 불순물 열처리 효과)

  • Lee, Sang-Youl;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.79-80
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    • 2007
  • To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

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The Effect of Construction Methods on Geothermal Exchange Rates of Cast-in-place Energy Piles (현장타설말뚝형 에너지 파일의 시공형태별 지중 열교환량에 관한 연구)

  • Park, Yong-Boo;Nam, Yu-Jin;Sim, Young-Jong;Sohn, Jeong-Rak
    • Land and Housing Review
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    • v.3 no.2
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    • pp.169-175
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    • 2012
  • In recent, there are many studies associated with energy piles to save initial construction cost for ground source heat pump system. In this study, to evaluate geothermal exchange rates two types (a connection type and a slinky type) of cast-in-place energy piles (PRD, 4.5m in depth, 1,200 mm in diameter) were constructed for the tests and their efficiencies were compared with numerical analysis results. As a result, starting with operation, geothermal exchange rate gradually decreases due to exchange of lower ground temperature. In the case of connection type, temperature difference is $0.37^{\circ}C$ in heating mode and $0.34^{\circ}C$, in cooling mode, respectively. In addition, in case of a connection type, geothermal exchange rate in heating mode is 2,314W/m and in cooling mode, 252.2W/m whose value is 9% higher than in heating mode. In the case of slinky type, the average geothermal exchange rate in heating mode is 168.0W/m, which is about 27% lower than that of connection type.

Suppressive Effect of Euryale ferox Salisbury Extracts on Inflammatory Response in LPS-stimulated RAW 264.7 Cells through the Antioxidative Mechanism (RAW 264.7 세포에서 Euryale ferox Salisbury 추출물의 항산화기전을 통한 산화적 스트레스.염증반응 억제효과 규명)

  • Kim, Young-Hwan;Lee, Min-Ja;Lee, Hye-Sook;Kim, Jung-Guk;Park, Won-Hwan
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.25 no.2
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    • pp.202-211
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    • 2011
  • The stems and branchs of Euryale ferox Salisbury (EF), are used in Chinese herbal medicine for latent-heat-clearing, antipyretic, detoxicant and anti-inflammatory ailments. This plant is used worldwide for the treatment of many types of inflammatory disease including respiratory infections, diabetes mellitus, rheumatoid arthritis and play an important role in the immune reaction. Topical natural antioxidants are a useful strategy for the prevention of oxidative stress mediated inflammatory disease. Plants produce significant amounts of antioxidants to prevent the oxidative stress caused by photons and oxygen, therefore they represent a potential source of new compounds with antioxidant activity. This study was designed to evaluate whether EFEA (ethylacetate fraction of EF) may ameliorate oxidative stress and inflammatory status through the antioxidative mechanism in LPS-stimulated RAW 264.7 murine macrophage cell line. Treatment of RAW 264.7 cells with EFEA significantly reduced LPS-stimulated inflammatory response in a dose-dependent manner. In conclusion, the EF extracts have anti-inflammatory effects in vitro system, which can be used for developing pharmaceutical drug against oxidative stress and chronic inflammatory disease.

Numerical Study on the Process Analysis of Biomass Fast Pyrolysis in a Circulating Fluidized Bed (순환유동층 반응기내 바이오매스의 급속열분해 공정해석에 관한 수치해석적 연구)

  • Lee, Yu Ri;Park, Hoon Chae;Choi, Myung Kyu;Choi, Hang Seok
    • Journal of Korea Society of Waste Management
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    • v.34 no.5
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    • pp.518-527
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    • 2017
  • The development of renewable energy is currently strongly required to address environmental problems such as global warming. In particular, biomass is highlighted due to its advantages. When using biomass as an energy source, the conversion process is essential. Fast pyrolysis, which is a thermochemical conversion method, is a known method of producing bio-oil. Therefore, various studies were conducted with fast pyrolysis. Most studies were conducted under a lab-scale process. Hence, scaling up is required for commercialization. However, it is difficult to find studies that address the process analysis, even though this is essential for developing a scaled-up plant. Hence, the present study carries out the process analysis of biomass pyrolysis. The fast pyrolysis system includes a biomass feeder, fast pyrolyzer, cyclone, condenser, and electrostatic precipitator (ESP). A two-stage, semi-global reaction mechanism was applied to simulate the fast pyrolysis reaction and a circulating fluidized bed reactor was selected as the fast pyrolyzer. All the equipment in the process was modeled based on heat and mass balance equations. In this study, process analysis was conducted with various reaction temperatures and residence times. The two-stage, semi-global reaction mechanism for circulating fluidized-bed reactor can be applied to simulate a scaled-up plant.

An Experimental Study on the Manufacturing Method and Performance of Planar Thick Film Heaters for Electric Vehicle Heating (전기자동차의 난방용 면상 후막히터의 제조방법과 성능에 관한 실험적 연구)

  • Chae-Yeol Lee;Jong-Han Im;Jae-Wook Lee;Sang-Hee Park
    • Journal of the Korean Society of Industry Convergence
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    • v.27 no.3
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    • pp.685-692
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    • 2024
  • Currently used heating elements are metal and non-metal heating elements, including various types of heaters, and resistance line heating elements have a problem of decreasing thermal efficiency over time, so to solve this problem, a planar heating element using high-purity carbon materials and oxidation-resistant inorganic compounds was applied. Through the manufacture of planar heating elements using CNT, ruthenium composite materials, and ruthenium oxide, physicochemical performance and capacity were increased, and instantaneous responsiveness was increased. Through thick film technology applicable to various base bodies, fine patterns were formed by the screening method in consideration of the fact that the performance of the heat source depends on the viscosity and pattern shape. The heating element was manufactured by thick film printing technology by mixing ruthenium oxide, CNT, Ag, etc. The characteristics of each paste were analyzed through viscosity measurement, and STS 430 was used as a base. Surface temperature and efficiency were measured by testing heaters manufactured for small wind tunnels and real-vehicle experiments. The surface temperature decreased as the air volume increased, and the optimal system boundary was found to be about 200 mm. Among the currently used heating elements, this paper manufactured a planar heating element using thick film technology to find out the relationship between air volume and temperature, and to study the surface temperature.

Optimization of Production Conditions of Biosurfactant from Bacillus sp. and its Purification (Bacillus sp.에 의한 생물계면활성제의 생산 및 그의 성질)

  • Kim, Jin-Sook;Song, Hee-Sang;Chung, Nam-Hyun;Bang, Won-Gi
    • Applied Biological Chemistry
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    • v.48 no.2
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    • pp.109-114
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    • 2005
  • A bacterium capable of emulsifying hydrocarbon, n-hexadecane, and decreasing surface tension of the culture media using oil collapsing method was isolated. The bacterium was partially identified as Bacillus sp. and named BJS-51. n-Hexadecane was the most effective carbon source for production of biosurfactant. Surface tension was decreased from 76 dyne/cm to 31 dyne/cm and CMD (critical micelle dilution) had the highest value of 5.7 at 3% n-hexadecane. Ammonium phosphate was the most effective nitrogen source, when C/N ratio was 60, surface tension and CMD were 29 dyne/cm and 9.2, respectively. Optimum pH and temperature were 7.2 and $30^{\circ}C$, respectively. Produced biosurfactant was extracted and purified using organic solvent extraction method and preparative HPLC systems. After analysis by various color reaction, this biosurfactant was identified as lipopolysaccharide. Surface tension and CMC (critical micelle concentration) of purified biosurfactant were 27 dyne/cm and 0.08 g/l, repectively. CMD was 9.2, so the yield of biosurfactant was about 0.74 g/l at the optimal conditions. The biosurfactant was very stable at wide range of $pH\;2{\sim}12$ with surface tension $29{\sim}31\;dyne/cm$ and showed $29{\sim}30\;dyne/cm$ of surface tension after heat treatment at $100^{\circ}C$ for 60 min.