• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1231-1236
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• 2004

In the present work, the practical thermal design process of 1 DIN car DVD receiver described. In the course of its efficient design, CAE technique was essentially used. CAE technique has reduced research period, man power and material cost but has increased research convenience, organized results and persuasive power. CAE technique helped to study parameters such as vent, fan and heat sink. Using these elements, it tried to meet optimal thermal solution. But safety standard, printed circuit board and framework mechanism should be considered as the constraint. To overcome these constraints, we tried to communicate and compromise with projectors in charge. After all, the price of those efforts has made the most competitive heat sink for heat dissipation in the 1 DIN car DVD receiver market. Moreover, we are trying to save $3 per product by removing fan. This paper is supposed to show an example of the CAE technique and help thermal designers to make electronic packaging goods.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.148-154
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• 2022

As the 4th industrial age approaches, the demand for semiconductors is increasing enough to be used in all electronic devices. At the same time, semiconductor technology is also developing day by day, leading to ultraprecision and low power consumption. Semiconductors that keep getting smaller generate heat because the energy density increases, and the generated heat changes the shape of the semiconductor package, so it is important to manage. The temperature change is not only self-heating of the semiconductor package, but also heat generated by external damage. If the package is deformed, it is necessary to manage it because functional problems and performance degradation such as damage occur. The package burn in test in the post-process of semiconductor production is a process that tests the durability and function of the package in a high-temperature environment, and heat dissipation performance can be evaluated. In this paper, we intend to review a new material formulation that can improve the performance of the adapter, which is one of the parts of the test socket used in the burn-in test. It was confirmed what characteristics the basic base showed when polyamide, a high-molecular material, and alumina, which had high thermal conductivity, were mixed for each magnification. In this study, functional evaluation was also carried out by injecting an adapter, a part of the test socket, at the same time as the specimen was manufactured. Verification of stiffness such as tensile strength and flexural strength by mixing ratio, performance evaluation such as thermal conductivity, and manufacturing of a dummy device also confirmed warpage. As a result, it was confirmed that the thermal stability was excellent. Through this study, it is thought that it can be used as basic data for the development of materials for burn-in sockets in the future.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.30 no.3
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• pp.77-86
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• 2002

위성은 일단 한 번 발사하고 나면 운용궤도상에서 수리 및 회수가 거의 불가능하기 때문에 위성에 들어가는 모든 개발 부품들은 완벽한 설계, 충분한 해석, 고 작업도의 제작, 그리고 다양한 시험이 반드시 수반되어야 한다. 위성시스템에서 전자 소자의 신뢰성에 영향을 주는 인자는 다양하다. 과도한 열은 전자소자의 실패를 유발해서 결과적으로는 전체 위성의 실패를 유도할 수 있다. 이 논문에서는 다목적 실용위성 2호의 고전력 소산 전장품의 열부하 완화를 위한 방안을 경우별로 연구 비교하였다. 고전력 소산 전장품의 열부하를 완화하기 위해서는 하우징 두께의 증가가 필요하며, 전력조절기의 다이오드나 트랜지스터처럼 전력소산이 큰 소자에 대해서는 장착위치를 변경하거나 장착 부분의 열전도율을 증가시키는 방법이 필요하다. 또한 전력조절기처럼 장착면이 좁은 경우에는 복사의 영향이 크며, 이러한 전장품의 열부하를 완화하기 위해서는 주위 벽면의 온도를 낮추거나 하우징 표면 방사율을 증가시키는 방법이 효과적임이 알 수 있다.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.19 no.5
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• pp.418-425
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• 2007

The power consumption and heat generation in a chip increase as the components are miniaturized and the computing speed becomes faster. Therefore, suitable heat dissipation has become one of the primary limiting factors to ensure the guaranteed performance and reliable operation of the electronic devices. A pin-fin array which may be considered as a porous medium could be used as an alterative cooling system of the electronic equipment. The aim of the present study is to investigate the forced-convective heat transfer characteristics of pin-fin heat exchangers. Convective heat transfer through the pin~fin array is analyzed experimentally based on porous medium approach. The influence of the structure of the pin-fin array including the pin-fin spacing, the pin diameter and plate length on heat transfer characteristic is investigated and compared with the Previous analytical results and existing correlation equations. Nowadays, electronic and mechanical devices become smaller and smaller. In this sense, the main purpose of this study is to decide the optimum pin-fin arrangement to get similar heat transfer performance when the length of the existing cooling system is reduced as a half.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.95-100
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• 2010

LED (Light Emitting Diode) is 85% of the applied energy is converted into heat that is already well known. Lately, LED chips increasing the capacity as result delivered to increase the heat of the LED products and module that directly related to life span and degradation. Thus, in industry the high-power LED chip to control the heat generated during the course of the study and the existing aluminum, copper adhesives, and uses MLC (Metal clad laminate) structures using low-cost FR4 and copper CCL (Copper Clad Laminate) to reduce costs by changing to a study being carried out. In this study, using low-cost CCL Class, mounted 1W LED chip to analyze changes in the thermal resistance. In addition, heat dissipation in the CCL to facilitate a variety of thermal via design outside of the heat generated by the LED chip to control and facilitate the optimal structure of the heat dissipation is suggested.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.12
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• pp.34-41
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• 2011

In order to understand the thermal performance of each LED chips in multi-chip LED package, a quantitative parametric analysis of the temperature evolution was investigated by thermal transient analysis. TSP (Temperature Sensitive Parameter) value was measured and the junction temperature was predicted. Thermal resistance between the p-n junction and the ambient was obtained from the structure function with the junction temperature evolution during the cooling period of LED. The results showed that, the thermal resistance of the each LED chips in 4 chip-LED package was higher than that of single chip- LED package.

• KIPS Transactions on Computer and Communication Systems
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• v.9 no.10
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• pp.213-220
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• 2020

The power consumption and performance of hardware-based mobile and IoT embedded systems that require high specifications are one of the important issues of these systems. In particular, the problem of excessive power consumption is because it causes a problem of increasing heat generation and shortening the life of the device. In addition, in the same environment, software also needs to perform stable operation in limited power and memory, thereby increasing power consumption of the device. In order to solve these issues, we propose a Low level power improvement via identifying performance dissipation. The proposed method identifies complex modules (especially Cyclomatic complexity, Coupling & Cohesion) through code visualization, and helps to simplify low power code patterning and performance code. Therefore, through this method, it is possible to optimize the quality of the code by reducing power consumption and improving performance.

• Journal of international Conference on Electrical Machines and Systems
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• v.3 no.1
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• pp.15-19
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• 2014

As the space of the wind power generator stator end is limited, it is difficult for us to place the inner evaporative cooling system in it. We use the non-overlapping concentrated windings scheme to solve the placing and cooling problem. The characteristic of a 5MW direct-driven permanent magnet generator with non-overlapping concentrated windings were analyzed under no-load, rating-load and short-circuit by (Finite Element Method) FEM for verification of design. We studied the connection methods of the stator windings and designed the end connection member. The heat dissipation of the stator end was simulated by FEM, the result showed that the end cooling could satisfy the wind generator operation needs. These results show that the direct-driven permanent magnet wind power generators with non-overlapping concentrated windings and inner evaporative cooling system can solve the cooling problem of wind power generator, and obtain good performance at the same time.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.96-97
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• 2017

본 논문은 Gallium Nitride-Field Effect Transistor(GaN-FET)를 적용한 고방열 및 고전력밀도 모듈형 벅 컨버터를 제안한다. Si-MOSFET를 적용한 벅 컨버터는 높은 스위칭 손실로 인해 고주파수 구동 및 자기소자 사이즈 저감에 한계가 존재하여 고전력밀도화가 어렵다. 반면, 제안된 방식은 스위칭 특성이 우수한 GaN-FET를 적용하여 고주파수 구동이 가능하며, 추가로 평면형 인덕터를 적용함으로써 자기소자의 부피 저감을 통해 컨버터의 고전력밀도화 및 모듈화가 가능하다. 특히, 방열 플레이트 및 케이스로 구성된 새로운 고방열 구조를 통해 방열효과를 극대화 시킬 수 있다. 제안된 모듈형 벅 컨버터의 타당성 검증을 위해 입력전압 48V, 출력전압 24V의 300W급 시작품 제작을 통한 실험결과를 제시한다.