• Journal of the Korean Institute of Oriental Medical Informatics
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• v.15 no.2
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• pp.7-56
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• 2009

Objective: The purpose of this study is to compare the original texts with quotations in 16 Kinds of Cough Part in Haesu Chapter of Dong-Yi-Bo-Gam and to find out the ideas of Huh Jun(許浚, 1546-1615; the author of Dong-Yi-Bo-Gam) in there. Methods: I compared the original texts with quotations in 16 Kinds of Cough Part in Haesu Chapter of Dong-Yi-Bo-Gam. Results: 1. There is only one quoted sentence which perfectly matches with original text in 16 Kinds of Cough Part in Haesu Chapter of Dong-Yi-Bo-Gam. The other sentences are all modified while they are quoted by Huh Jun, at least one word. 2. The arrangement order of 'medical effect', 'consisting medicines and their dosages' and 'doctrine in application' were rearranged following the form of Dong-Yi-Bo-Gam when being quoted. 3. In cases of reciting the text, Huh Jun tries to clarify the original source of the context. However, instead of using original quotations he recited rephrased quotes from other sources. 4. Huh Jun cites from not only cough parts of other texts but also asthma(喘症) or heat(積熱) parts. 5. Titles of original text books are recorded in the end of all sentences of Dong-Yi-Bo-Gam, but there are a few wrong titles recorded. Conclusion: In consideration of the above-mentioned, the Dong-Yi-Bo-Gam is not the mere collection of various Oriental Medical books, but the Classic of Oriental Medicine to hold Huh Jun's own opinion.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.307-312
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• 2011

As a technique for removing cancerous tumors from normal tissue, radio-frequency electromagnetic waves were employed to heating target cells up to the critical temperature, which kills the cancerous cells. However, its use in treating tumors in soft organs is limited by inconvenient factors, which are use of high-currents and long time operation. In this work, the feasibility of the localized heating by inserting four conducting electrodes with tiny direct current is investigated. The heat source is resulting from the electric field as known as resistive heating. We have investigated the temperature distribution as a function of applying DC voltages ranging from 10 V to 30 V with 10 V step. From the simulation results, the mushroom-like lesion shape by applying 20 V is generated by four electrodes within a few minutes, that is proper to the clinical application.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Hydrogen and New Energy
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• v.19 no.1
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• pp.41-48
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• 2008

Fermentative $H_2$ production was studied using microbial consortia isolated from heat-treated ($90{\circ}C$, 20 min) sewage sludge. Important parameters investigated were carbon(C) and nitrogen(N)-sources, C/N ratio, phosphate concentration, pH and temperature during anaerobic cultivation in serum bottles. Starch, ribose, sucrose and glucose were good C-sources for the culture growth and $H_2$ production. Yeast extract was better N-source than $(NH_4)_2SO_4$ or peptone when individually added to the synthetic media, however the combination of above three N-sources exhibited the additional effect for cell growth and $H_2$ evolution. Addition of 100 mM phosphate as a buffering agent prevented the rapid pH drop during the cultivation. The optimum initial pH for the cell growth was at 7.0, whereas $H_2$ production was observed at pH 5.5. Optimum temperature for the cell growth and $H_2$ production was $37{\circ}C$. Initial C/N ratio of 1.22 in the media using glucose and yeast extract as the C- and N-sources, respectively, showed the $H_2$ yield 1.0 mol $H_2$/mol glucose.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.558-565
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• 2002

Coal fly ash, produced from a power plant in Korea was used for the production of glass-ceramics and the physical properties of glass-ceramics were evaluated. CaO and TiO$_2$ were added into the fly ash during the melting process to reduce the viscosity of molten glass and to induce internal crystallization of glass, respectively. Glass-ceramic was produced through a single stage heat treatment (at 950∼1050$\^{C}$ for 37∼240 min) after preparing glass (iota fly ash powder. As a result, a new tiny rod type crystals (a=7.4480, b=10.7381, c=4.3940 A, $\alpha$=94.9, $\beta$=98.6, γ=108.5°) was found in the glass-ceramics, which showed attractive mechanical properties, high hardness (7.1∼7.6 GPa) and wear resistance (by erosion test). Thus a glass-ceramic produced from thermal power plant fly ash and cell as a source for CaO exhibits a suitable treatment for the recycling and exploitation of waste materials and would be acceptable for a new application far building materials.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.757-758
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• 2010

At the time of medical treatment and surgical operation, halogen lamp and plasma lamp were mainly used as luminous source for lighting. These two luminous sources have drawbacks that the life of lamps are not long, various problems are brought about due to excessive heat generation and its volume is very big because of cooling device. Accordingly, in this research a ring light was developed so that a partial shadowless shooting for the patient's affected area at the medical treatment room and surgical operation room using high luminance LED for which attention is being paid as new lighting parts for medical purpose. LED which was applied to the development used high luminance three color LED for full color for which various color materialization and the adjustment of radiation intensity are possible and we can get white light in order to emphasize the delicate expression for generic tone of shooting object, strong highlight, simple shadow and three dimensional effect at the time of close-up shadowless shooting of the affected area.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of Hydrogen and New Energy
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• v.31 no.5
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• pp.405-410
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• 2020

In this literature, we are introduce a basic design of multi energy hub based on natural gas governor station. Multi energy hub consists of turbo expender generator, phosphoric acid fuel cell, pressure swing adsorption, H₂ charging station, utilities and etc. We design a hybrid energy hub system that provides energy using these complex energies, and calculates the amount of electricity that can be produced and the amount of hydrogen charged through the process analysis. TEG and phosphoric acid fuel cell produce 2,290 to 2,380 kW and can supply electricity to 500 houses. In addition, By-product H₂ gas is refined to H₂ vehicle fuel. This will help maximize the balance of energy demand and supply and improve national energy efficiency by integrating unused decompression energy power generation technology and various power generation/heat source technologies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.