• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.284-290
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• 2020

Energetic thermoplastic elastomers (ETPEs) based on glycidyl azide polymer (GAP) and carboxylated GA copolymers [GAP-ETPE and poly(GA-carboxylate)-ETPEs] were synthesized using isophorone diisocyanate (IPDI), dibutyltin dilaurate (DBTDL), 1,4-butanediol (1,4-BD), and soft segment oligomers such as GAP and poly(GA-carboxylate). The synthesized GAP-ETPE and poly(GA-carboxylate)-ETPEs were characterized by Fourier transform infrared (FT-IR), gel permeation chromatography (GPC), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), universal testing machine (UTM), calorimetry and sensitivity towards friction and impact. DSC and TGA results showed that the introduction of carboxylate group in GAP helped to have better thermal properties. Glass transition temperatures of poly(GA-carboxylate)-ETPEs decreased from -31 ℃ to -33 ℃ compared to that of GAP-ETPE (-29 ℃). The first thermal decomposition temperature in poly(GA_0.8-octanoate_0.2)-ETPE (242 ℃) increased in comparison to that of GAP-ETPE (227 ℃). Furthermore, from calorimetry data, poly(GA-carboxylate)-ETPEs exhibited negative formation enthalpies (-6.94 and -7.21 kJ/g) and higher heats of combustion (46713 and 46587 kJ/mol) compared to that of GAP-ETPE (42,262 kJ/mol). Overall, poly(GA-carboxylate)-ETPEs could be good candidates for a polymeric binder in solid propellant due to better energetic, mechanical and thermal properties in comparison to those of GAP-ETPE. Such properties are beneficial to application and processing of ETPE.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.133-137
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• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Proceedings of the KIPE Conference
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• 2019.11a
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• pp.90-92
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• 2019

본 논문은 GaN 디바이스를 사용하는 전력변환장치에서 Pick-up coil을 PCB 패턴으로 구현하여 전류를 측정하는 기법에 관하여 제안한다. 기존에 사용되는 PCB 패턴 코일 구조의 경우 PCB 이중층만 구성하여 관통 홀이나 추가공정이 필요함에 비해 본 논문에서 제안한 PCB 패턴 코일 구조의 경우 다층기판을 사용하여 코일을 구성함으로서 기존의 패턴에 비해 높은 상호 인덕턴스 값을 가지게 되고, 코일의 출력 전압값이 높아져 더 높은 감도를 가지게 된다. 또한 PCB 외부의 추가적인 공정 작업이 없이 구성이 되었다. 전류 측정은 코일 뒷단에 적분기를 통합하여 구성하였으며, 시뮬레이션을 통해 전류 측정 성능을 검증한다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.109-116
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• 2003

Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.74-79
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• 1999

Langasite($La_3Ga_5SiO_14$) is a new piezoelectric material which is similar to quartz, LN($LiNbO_3$) and LT($LiTaO_3$) in its acoustic behavior. In this study, pure Langasite and Lagnasite family groups were synthesized by the solid state reactions in air. The diffusion species for synthesis were investigated and the sintered body was studied on dielectric property to comparison of characteristics. Also, Langasite single crystals were grown by self-designed Czochralski system and characterized.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.142-142
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.148.1-148.1
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• 2009