Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)
- 2003.12a
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- Pages.109-116
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- 2003
Luminescence characteristics of amorphous GaN quantum dots prepared by laser ablation at room temperature
- Shim, Seung Hwan (Department of Ceramic Engineering, Ceramic Processing Research Center (CPRC), Hanyang University) ;
- Yoon, Jong-Won (Nanoarchitectonics Research Center (NARC), National Institute of Advanced Industrial Science and Technology (AIST)) ;
- Koshizaki, Naoto (Nanoarchitectonics Research Center (NARC), National Institute of Advanced Industrial Science and Technology (AIST)) ;
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Shim, Kwang Bo
(Department of Ceramic Engineering, Ceramic Processing Research Center (CPRC), Hanyang University)
- Published : 2003.12.01
Abstract
Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.
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