• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.235-237
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• 2016

Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (T_av) of 71.7%, resistivity of 6.63 × 10⁻⁵ Ω·cm and Hall mobility of 15.22 cm²V⁻¹s⁻¹.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.6-9
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• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• ETRI Journal
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• v.17 no.3
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• pp.17-43
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• 1995

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.265-273
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigate the surface carrier concentration, Hall electron mobility, electrical resistivity and sensitivity according to temperature variation and TMA gas concentration. The ZnO-based thin film sensors prepared by sputtering in oxygen showed higher surface carrier concentration, higher Hall mobility, higher sensitivity, and lower electrical resistivity than sensors prepared by sputtering in argon. The doping ZnO-based thin film sensors showed the same electrical properties in comparison with nondoping sensors. In case of sputtering on the oxygen gaseous atmosphere, the ZnO-based thin film sensors doped with 4.0 wt.% $Al_{2}O_{3}$, 1.0 wt.% $TiO_{2}$, and 0.2 wt.% $V_{2}O_{3}$ showed the highest surface carrier concentration of $5.95{\times}10^{20}cm^{-3}$, Hall electron mobility of $177\;cm^{2}/V{\cdot}s$, lowest electrical resistivity of $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ and highest sensitivity of 12.1(working temperature, $300^{\circ}C$, TMA gas, 8 ppm).

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.191-196
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• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.