Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Hall Effect Characteristics of InSb Thin Film

InSb 박막의 홀효과 특성

  • 이우선 (조선대학교 전기.제어계측공학부) ;
  • 조준호 (조선대학교 전기.제어계측공학부) ;
  • 최권우 (조선대학교 전기.제어계측공학부) ;
  • 정용호 (서강 정보대학 열냉동과) ;
  • 김상용 ((주) 아남반도체)
  • Published : 2000.04.28
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Abstract

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

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