• Proceedings of the Korean Institute of Interior Design Conference
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• 2007.11a
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• pp.159-162
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• 2007

In the twentieth century, due to extraordinary development of companies and life style, etc, market environments to which companies around the world currently face are being changed with reflecting the current age in various fields, which result from globalization, digitalized innovation, diversity by information acceptance, an enhanced level of a consumer's consciousness, developed mass media, etc. The companies are trying to expand their sale areas, not only products but also their cultures, images, and brand power in the name of a 'marketing' in a space In other words, if companies and brands express some identities without considering an entire image evaluated by customers, a mis-positioning for the companies and the brands may be caused. In this case, the companies and brands may not influence on potential major customers at all, of an image for the companies and brands may be degrade Accordingly, a space marketing is required as a distinguished strategic means in characterizing identities according to brands. Also, a design for communicating the space marketing with the customers is required. Therefore, the purpose and effects of the present research are to analyze how identity characteristics for brands and company images are reflected by analyzing a faadeof a hall for housing cultures, and are to analyze how they are recognized by customer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.11-16
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• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Journal of Welding and Joining
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• v.22 no.3
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• pp.69-76
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• 2004

Effects of friction stir welding parameters such as tool rotation speed and welding speed on the joints properties of 5052 Al alloys were studied in this study. A wide range of friction stir welding conditions could be applied to join 5052 AA alloy without defects in the weld zone except for certain welding conditions with a lower heat input. Microstructures near the weld zone showed general weld structures such as stir zone (SZ), thermo-mechanically affected zone (TMAZ) and heat affected zone (HAZ). Each zone showed the dynamically recrystallized grain, transient grain and structure similar to base metal's, respectively. Hardness distribution near the weld zone represented a similar value of the base metal under wide welding conditions. However, in case of 800 rpm of tool rotation speed, hardness of the stir zone had a higher value due to the fine grain with lots of dislocation tangle, a higher angle grain boundary and some of Al3Fe particles. Except joints with weld defects, tensile strength and elongation of the joints had values similar to the base metal values and fracture always occurred in the regions approximately 5mm away from the weld center.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.18 no.1
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• pp.87-93
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• 2008

Seismic control performance of MR dampers, which have severe nonlinearity, varies with respect to the dynamic characteristics of an earthquake such as magnitude, frequency and duration. In this study, the effects of excitation characteristics on the equivalent linear system of a building structure with the MR damper are investigated through numerical analysis for artificial ground motions generated from different response spectrums. The equivalent damping ratio of the structure with the MR damper is calculated using Newmark and Hall's equations for ground motion amplification factors. It is found that the equivalent damping ratio of the structure with the MR damper is dependent on the ratio of the maximum friction force of the MR damper over excitation magnitude. Frequency contents of the earthquake ground motion affects the equivalent damping ratio of long-period structures considerably. Also, additional damping effect caused by interaction between the viscousity and friction of the MR damper is observed. Finally. response reduction factors for equivalent linear systems are proposed in order to improve accuracy in the prediction of the actual nonlinear response.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.171-176
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• 1998

Transparent conducting ITO (Indium Tin Oxide) thin films were prepared on soda lime glass by reactive dc magnetron sputtering mothod. The maaterial properties were measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a resuIts, the (400) park for $O_2 gas rate 2% grows uniquely as the preferred orientaon. However, the (400) peak exists at $O_2 gas rate 5% as well as the (222) peak appears abruptly as the main orietation. Both <100> and <111> grain alignments are consisted simultaneously in the XRE pattern of ITO thin films. The electrical charcteristics were esimated by the electrical resistivity, optical transmission, and Hall mobillty, ect. The resistivity of ITO thin film deposited at 4cm from the substrate center is increased from $2\times10^-4$ to $8\times10^-4\Omega$cm as a function of $O_2$ gas pressure (0~5%). The optical transmission curves with a rising of $O_2$ gas rate become shifted into longer wavelength range.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Journal of People, Plants, and Environment
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• v.23 no.2
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• pp.171-178
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• 2020

The present study was conducted to determine the effects of electron beam irradiation on the postharvest quality of cut flowers. Cut flowers were irradiated with electron beam at 100, 200, 400, 600, 800, 1,000, and 2,000 Gy with a 10 MeV linear electron beam accelerator to evaluate their irradiation tolerance. Postharvest quality was determined by monitoring fresh weight loss, flower longevity, flower diameter, flowering rate, visual quality of flowers and leaves, and chlorophyll content. Cut flowers showed a radiation-induced damage with increasing the irradiation dose. Flower longevity and fresh weight of cut flowers decreased when the irradiation dose was increased. Flower bud opening was also inhibited in a dose-dependent manner. The effective irradiation doses for 10% reduction of postharvest quality (ED₁₀) values were 144.4, 451.6, and 841.2 Gy in the 'Medusa' lily, 'Montezuma' carnation, and 'Rosina White' eustoma, respectively. Although tolerance of cut flowers to electron beam irradiation vary according to species, cultivars, or maturity stage conditions, it is conceivable that 'Montezuma' carnation and 'Rosina White' eustoma could be tolerated and maintained overall postharvest quality up to 400 Gy, the generic irradiation dose approved by the Animal and Plant Health Inspection Service (APHIS) and the International Plant Protection Convention (IPPC) for postharvest phytosanitary treatments.