• Transactions of the Korean Society of Automotive Engineers
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• v.17 no.5
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• pp.74-83
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• 2009

Recently, usage of electric and electronic system for car increases rapidly. Consequently power monitoring supplied to the system is essential for management and controlling. Generally, battery status is monitored through measuring and diagnosing the current measurement method utilizing Hall Effect. Therefore, in this paper, we analysed magnetic field to develop the solution of DC current sensor using Hall Effect which is the core of design and development. By analysing the magnetic field by FEM using Maxwell 3D software, the location of the highest output current and stable part in the Hall IC sensor was shown. Also, the optimal core design of DC current sensor using parametric and Simplex method was presented. A car battery charge and discharge process dependant on time effect on the changing of magnetic field was simulated and compared to the result from the experiment result of actual vehicle.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.113-116
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• 1994

InSb thin film magnetic sensor, which have been prepared on glass substrate by vacuum evaporation, is investigated in this paper. The dependance of Hall voltage on magnetic field and temperature is examined by Hall effect. The variation of Hall voltage with magnetic field is almost linear at constant current drive but it is deviated from the linearity at constant voltage drive. Hall voltage decreases as the ambient temperature increases, so it is necessary to take into account the temperature effect when the InSb thin film is used as magnetic sensor.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.268-277
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• 1994

Current sensor using Hall device is an instrument of detecting a current by Hall effect. The existing current sensor is ordinarily worked by concentrating electromagnetism produced around the conducting wire turned iron core. The tiny curren, however, could not be accurately detected by the instrument owing to influence of residual magnetism exisisting in iron core, and the result of detecting is also somewhat on the large side. kAccordingly, We fabricated a new type of instrument minimizing the influence of residual magnetism existing in iron core and detected the tiny DC current accurately by taking advantage of magnetic modulation. The range of measuring DC current is 0[mA]-100[mA] and the maxiumm Linerity tolleance by the result of detecting current, can be reduced less than 3 percent.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.49-53
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• 2013

A current sensor is one of important component which is used for the electrical current measurement during charge and discharge of the battery, and monitoring system of the motor controller in the electric and hybrid vehicle. In this study, we have developed an open loop type current sensor using GaAs Hall sensor and magnetic core has an air gap. The Hall sensor detect magnetic field produced by the current to be measured. The 3 mm air gap core was made by HGO electrical steel sheets after slitting, winding, annealing, molding, and cutting. Developed current sensor shows 0.03 % linearity within DC current range from -400 A to +400 A. Operating temperature range was extended to the range of $-40{\sim}105^{\circ}C$ using temperature compensating electronic circuit. To Improve frequency bandwidth limit due to the air flux of PCB (Printed Circuit Board) and Hall sensor, We employed an air flux compensating loop near Hall sensor or on PCB. Frequency bandwidth of the sensor was 100 kHz when we applied sine wave current of $40A{\cdot}turn$ in the frequency range from 100 Hz to 100 kHz. For the dynamic response time measurement, 5 kHz square wave current of $40A{\cdot}turn$ was applied to the sensor. Response time was calculated time reach to 90 % of saturation value and smaller than $2{\mu}s$.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.310-319
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• 2016

Three types of gap sensors, a capacitive gap sensor, an eddy current gap sensor, and a Hall effect gap sensor are described and evaluated through experiments for the purpose of precise gap sensing for micrometer scale movement, and a novel type of differential hall effect gap sensor is proposed. Each gap sensor is analyzed in terms of resolution and environment dependency including temperature dependency. Furthermore, a transport system for AMOLED deposition is introduced as a typical application of gap sensors, which are recently receiving considerable attention. Based on the analyses, the proposed differential Hall effect gap sensor is found to be the most suitable gap sensor for precise gap sensing, especially for application to a transport system for AMOLED deposition. The sensor shows resolution of $0.63mV/{\mu}m$ for the overall range of the gap from 0 mm to 2.5 mm, temperature dependency of $3{\mu}m/^{\circ}C$ from $20^{\circ}C$ to $30^{\circ}C$, and a monotonic characteristic for the gap between the sensor and the target.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.3
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• pp.205-210
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• 2013

This paper presents a novel hall sensor fault detection and fault-tolerant control method for a high-speed permanent magnet synchronous motor (PMSM) drive system. A phase locked loop (PLL) type position estimator is used with a conventional interpolation based rotor position estimator to reduce position errors due to misalignment of hall sensors. The expected trigger time of hall sensor's output is used for detecting hall sensor fault condition and the PLL type position estimator is reconfigured for fault-tolerant control at the hall sensor fault condition. The proposed method can minimize current ripples during the transition from sensored control using hall sensors to sensorless control. Experimental results have been proposed to prove the validity of the proposed method.

• Journal of Magnetics
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• v.19 no.2
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• pp.151-154
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• 2014

Recent years have seen an increasing range of planar Hall resistive (PHR) sensor applications in the field of magnetic sensing. This study describes a new application of the PHR sensor to monitor a current. Initially, thermal drift experiments of the PHR sensor are performed, to determine the accuracy of the PHR signal output. The results of the thermal drift experiments show that there is no considerable drift in the signals attained from 0.1, 0.5, 1 and 2 mA current. Consequently, the PHR sensor provides adequate accuracy of the signal output, to perform the current monitoring experiments. The performances of the PHR sensor with bilayer and trilayer structures are then tested. The minimum detectable currents of the PHR sensor using bilayer and trilayer structures are $0.51{\mu}A$ and 54 nA, respectively. Therefore, the PHR sensor having trilayer structure is the better choice to detect ultra low current of few tens nanoampere.

• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.2
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• pp.53-57
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• 2017

This papers propose a Hall-effect sensors position error compensation method in a sunroof system using a BLDC motor with a low-cost MCU. If the BLDC motor is controlled with this wrong position, the torque ripple and operating current can be increased and the average torque also decreases. Generally, sunroof system has characteristics that operate at constant load for several seconds. It is possible to find the minimum operating current value while changing the position of the Hall-effect sensor during the sunroof operation by using these characteristics. Therefore, propose a method to change the Hall-effect sensor position and find the minimum current value. The validity of the proposed algorithm is verified through experiments.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.165-170
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• 1995

This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.