• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.257-258
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• 2008

Hall-type current sensors have been widely used in many fields such as elevator and train system. To estimate lifetime of hall-type current sensors, an accelerated life test with real-time monitoring system simultaneously was designed and performed in high temperature environment with three different temperatures. From the experimental results, activation energy was about 0.9 eV, and acceleration factor was about 450 based on Arrhenius model. As a results, $B_{10}$ lifetime of hall-type current sensor is estimated to be 65,460 hours.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.187-190
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• 1991

The analytical model to investigate the effects of the drift and diffusion carrier transport upon the Hall effect is presented and applied to the general PN junction structure. The diffusion current effect on the Hall coefficient can not be considered in the conventional model, which produces the conversion of the direction of the induced Hall field between measured and calculated values. The proposed analytical model which considers the diffusion current effect provides the coincident results with the previous experimental results.

• 센서학회지
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• 제23권6호
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• pp.392-396
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• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 한국인터넷방송통신학회논문지
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• 제21권2호
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• pp.143-149
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• 2021

BLDC 전동기는, 영구자석의 고성능화를 비롯한 소재 기술 향상, 고집적·고기능화를 갖는 구동 IC 기술의 진보, 고점적율화 등의 조립 기술 개선 등으로 인하여 성능이 점점 좋아지고 있다. 이러한 구형파 구동 BLDC 전동기의 장점이 있으면서 보다 사용자의 요구에 대응하기 위해 구형파 구동 BLDC 영구자석 전동기 설계 및 개발, 위치검출방식 회로와 드라이버 개발에 관심이 증가하고 있다. 그러나 스위칭 손실에 의한 효율 저하 및 진동, 소음 등으로 인하여 가격적·기능적인 장점에도 불구하고 그 응용에 있어서는 다소 제한적인 실정이다. 따라서 본 논문에서는 정현파가 발생하는 Hall Effect Sensor를 사용하여 BLDC 전동기 회전자의 자속에 비례하여 정현파 신호를 만드는 위치검출 회로를 연구하여 전동기의 효율 증대, 리플 저감, 속도 및 토크 특성이 우수한 정현파 전류 구동을 구현하고자 한다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.499-502
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• 2017

전력의 효율적인 사용과 전기 안전(electrical Safety)을 위한 전류 측정에 대한 요구가 늘고 있다. 이에 전류 센서가 사용되며, 특히 홀 효과(hall effect)를 이용하여 회로를 차단하지 않고 전류를 측정할 수 있는 비접촉식 전류 센서가 많이 사용되고 있다. 하지만 이러한 전류 센서에는 다양한 잡음 등의 유입으로 인하여 전류 센서의 정확한 측정을 방해한다. 본 논문은 기존의 전류 센서에 저역통과 FIR필터를 사용하여, 보다 잡음에 강인한 전류 센서를 제안한다. 전류 센서의 출력단에 일정 주파수 이상의 영역을 차단하는 FIR필터를 설계하여 외부 잡음 등을 제거하였으며, 그 결과 기존 전류센서 보다 정확하고 정밀한 측정을 할 수 있었다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• 전력전자학회논문지
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• 제17권3호
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• pp.246-251
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• 2012

This paper proposes a new position compensation method for misaligned Hall-effect sensors of BLDCM(Brushless DC Motor). If the Hall-effect sensors are installed at wrong position, the exact rotor position cannot be obtained. Therefore, when the BLDCM is controlled with this wrong position, the torque ripple can be increased and the average torque also decreases. The back-EMF of BLDCM can be obtained by using the voltage equation and by multiplying the back-EMF constant and rotor speed. At a constant speed, the estimated back-EMF by using the multiplication of the back-EMF constant and rotor speed is constant, but the estimated back-EMF from the voltage equation decreases at the commutation point because the line-to-line back-EMF of two conducting phases is start to decrease at this point. Therefore, by using the difference between these two estimated back-EMFs, the commutation point of the phase current can be determined and position compensation can be carried out. The proposed position correction method doesn't require additional hardware circuit and can be easily implemented. The validity of the proposed position compensation method is verified through several experiments.

• 한국산학기술학회논문지
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• 제17권6호
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• pp.1-8
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• 2016

오늘날 전류센서는 전류량 제어, 감시, 계측 등 매우 다양한 분야에서 사용되고 있다. 또한 전력망의 스마트 그리드사업, 신재생에너지 발전, 전기자동차와 하이브리드 자동차 등의 수요가 커지면서 그 사용영역이 점차 확대되고 있는 추세이다. 여러 종류의 전류센서 중에서 홀 소자를 사용하는 개방형 전류센서는 다른 형식의 전류센서에 비해 가격이 싸고, 크기와 무게가 작은 장점이 있지만 정밀도가 낮고 주위의 온도 변화에 따라 특성이 변하는 것이 단점이다. 이러한 단점을 보완하기 위하여 본 연구에서는 정밀도와 온도성능이 뛰어난 300A급 개방형 전류센서를 설계 및 제작하였다. 300A급 개방형 전류센서를 제작하기 위해서 수치해석을 통해 철심을 설계하고 회로해석 프로그램을 이용하여 신호처리에 필요한 회로들을 설계하였다. 이러한 과정을 통해서 SMD(Surface Mount Device) 형태로 제작된 300A급 개방형 전류센서는 30 ~ 300A의 직류 및 교류전류를 통전한 실험에서 정밀도 오차가 0.75% 이내, 선형도 오차가 0.19% 이내였다. 또한 온도보상회로를 포함한 전류센서를 $-25{\sim}85^{\circ}C$의 온도범위에서 동작시켰을 때 온도계수는 $0.012%/^{\circ}C$ 이내였다.

• 전기학회논문지
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• 제63권5호
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• pp.713-718
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• 2014

DC urban railway power system consists of DC power network and AC power network. The DC power network supplies electric power to railway vehicles and the AC power network supplies electric power to station electric equipment. Recently, because of power consumption reduction and peak load shaving, intelligent measurement of regenerative energy and renewable energy adapted on DC urban railway is required. For this reason, DC smart metering system for DC power network shall be developed. Therefore, in this paper, DC voltage sensor, current sensor, and DC smart meter were developed and evaluated by performance test. DC voltage sensor was developed for measuring standard voltage range of DC urban railway, and DC current sensor was developed as hall effect split core type in order to install in existing system. DC smart meter possesses function of general intelligent electric power meter, such as measuring electricity and wireless communication etc. And, DC voltage sensor showed average 0.17% of measuring error for 2,000V/50mA, and current sensor showed average 0.21% of measuring error for ${\pm}2,000V/{\pm}4V$ in performance test. Also DC smart meter showed maximum 0.92% of measuring error for output of voltage sensor and current sensor. In similar environment for real DC power network, measuring error rate was under 0.5%. In conclusion, accuracy of DC smart metering system was confirmed by performance test, and more detailed performance will be verified by further real operation DC urban railway line test.