• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.231-232
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.226-227
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• 2002

최근 정보 산업 기기의 고성능화ㆍ소형화 추세에 따라 이에 소요되는 각종 전자 부품들도 고기능화ㆍ고집적화의 방향으로 기술전개가 이루어지고 있으며 현재 큰 장애 요인으로 등장하고 있는 분야중의 하나가 전자 변환 기능을 담당하는 연자성 재료 분야이다. 전자기기의 소형, 콤팩트화를 위해서는 자기 부품의 소형화가 이루어져야 하고, 따라서 여기에 내장되는 연자성 재료의 소형화도 필수적인 조건이 된다. (중략)

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.138-138
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• 2009

Cr과 Zr의 segments(Cr:Zr= 50:50 vol.%)로 구성되어진 단일타겟을 이용하여 CrZrN 박막을 합성하였다. CrZrN 박막은 비대칭 마그테트론 스퍼터링법을 이용하였으며, 공정조건 중 질소분압을 변화시켜 CrZrN 박막을 합성하였다. 질소분압 변화에 따른 CrZrN 박막의 기계적, 화학적 특성들의 변화를 분석하였다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.8
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• pp.735-743
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• 2011

In this study, the distribution of surface pressure was measured in a steady state on a turbine blade which was moved the injected region and receded the stagnation region using a linear cascade apparatus. Axial-type blades were used and the blade chord was 200mm. The rectangular nozzle was applied and its size was $200mm{\times}200mm$. The experiment was done at $3{\times}10^5$ of Reynolds number based on the chord. The surface pressures on the blade were measured at three different nozzle angles of $58^{\circ}$, $65^{\circ}$ and $72^{\circ}$ for off-design performance test. In addition, three different solidities of 1.25, 1.38 and 1.67 were applied. From the results, the low solidity caused the low pressure on the blade suction surface at entering region and the reverse rotating force was generated at the low nozzle angle. The positive incidence also made the pressure lower on the suction surface at entering region.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.194-194
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• 2003

As a result of the recent miniaturization an enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with high magnetic permeability in the high frequency range, high saturation magnetization, in high electrical resistivity, and low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm and 1 $\mu\textrm{m}$ thickness were deposited on Si wafer, using RF magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2mTorr, O$_2$ partial pressure of 5%, input power of 400W, and Al pellets on an Fe disk with purity of 99,9%. Magnetic properties of the continuous films as followed: the 4$\pi$M$\_$s/ of 19.4kG, H$\_$c/ of 0.6Oe, H$\_$k/ of 6.0Oe and effective permeability of 2500 up to 100㎒ were obtained. In this work, we expect to enhance effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Progress in Superconductivity and Cryogenics
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• v.25 no.2
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• pp.14-18
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• 2023

Superconducting layers deposited on the metal substrate using the pulsed laser deposition process (PLD) play a crucial role in exploring new applications of superconducting wires and enhancing the performance of superconducting devices. In order to improve the superconducting property and increase the throughput of superconducting wire fabricated by pulsed laser deposition, high temperature heating device is needed that provides high temperature stability and strong durability in high oxygen partial pressure environments while minimizing performance degradation caused by surface contamination. In this study, new heating device have been developed for PLD process that deposit and growth the superconducting material continuously on substrate using reel-to-reel transportation apparatus. New heating device is designed and fabricated using iron-chromium-aluminum wire and alumina tube as a heating element and sheath materials, respectively. Heating temperature of the heater was reached over 850 ℃ under 700 mTorr of oxygen partial pressure and is kept for 5 hours. The experimental results confirm the effectiveness of the developed heating device system in maintaining a stable and consistent temperature in PLD. These research findings make significant contributions to the exploration of new applications for superconducting materials and the enhancement of superconducting device performance.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.2
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• pp.119-126
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• 2002

The methanol partial oxidation using commercial $CuO/ZnO/Al_2O_3$ catalysts in a plug flow reactor was studied in the temperature range of $200{\sim}250^{\circ}C$ at atmospheric pressure, It was achieved the high activities by Cu-based catalysts and the selectivity of $CO_2$/$H_2$ was 100% when $O_2$ was fully convened. The reactivity changes and their hysteresis with increasing/decreasing temperatures were observed due to the chemical state differences between the oxidation and the reduction on the Cu surface, It was suggested as the two-step reaction: the complete oxidation and the following steam reforming for methanol, which was indicated by the distributions of final products vs. the residence time. In addition, the complete oxidation step was shown to be extremely fast and the total reaction rate can be controlled by the steam reforming reaction.