Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
권호 표지

Effect of oxygen partial pressure on the optical and structural properties of Al doped ZnO thin films prepared by RF magnetron sputtering method

RF 마그네트론 스퍼터 방법으로 제조한 Al 도핑된 ZnO 박막의 구조 및 광학적 특성에 미치는 산소 분압비의 영향

  • Shin, Seung-Wook (Department of Materials Science and Engineering, Chonnam National University) ;
  • Park, Hyeon-Soo (Department of Materials Science and Engineering, Chonnam National University) ;
  • Moon, Jong-Ha (Department of Materials Science and Engineering, Chonnam National University) ;
  • Kim, Tae-Won (Nanoelectronic Team, Gwangju Research Center Korea Institute of Industrial Technology) ;
  • Kim, Jin-Hyeok (Department of Materials Science and Engineering, Chonnam National University)
  • 신승욱 (전남대학교 신소재 공학부) ;
  • 박현수 (전남대학교 신소재 공학부) ;
  • 문종하 (전남대학교 신소재 공학부) ;
  • 김태원 (한국생산기술연구원 광주본부 나노전자 소자팀) ;
  • 김진혁 (전남대학교 신소재 공학부)
  • Published : 2008.04.22
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Abstract

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

Keywords

Acknowledgement

Supported by : 전남대학교

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