• Title/Summary/Keyword: HOPG

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A Study on the Effect of Graphene Substrate for Growth of Vanadium Dioxide Nanostructures (이산화바나듐 나노구조물의 성장에서 그래핀 기판의 영향에 관한 연구)

  • Kim, Ki-Chul
    • Journal of Convergence for Information Technology
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    • v.8 no.5
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    • pp.95-100
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    • 2018
  • The metal oxide/graphene nanocomposites are promising functional materials for high capacitive electrode material of secondary batteries, and high sensitive material of high performance gas sensors. In this study, vanadium dioxide($VO_2$) nanostructrures were grown on CVD graphene which was synthesized on Cu foil by thermal CVD, and exfoliated graphene which was exfoliated from highly oriented pyrolytic graphite(HOPG) using a vapor transport method. As results, $VO_2$ nanostructures on CVD graphene were grown preferential growth on abundant functional groups of graphene grain boundaries. The functional groups are served to nucleation site of $VO_2$ nanostructures. On the other hand, 2D & 3D $VO_2$ nanostructures were grown on exfoliated graphene due to uniformly distributed functional groups on exfoliated graphene surface. The characteristics of morphology controlled growth of $VO_2$/graphene nanocomposites would be applied to fabrication process for high capacitive electrode materials of secondary batteries, and high sensitive materials of gas sensors.

Heterogeneous Electron Transfer at Polyoxometalate-modified Electrode Surfaces

  • Choi, Su-Hee;Seo, Bo-Ra;Kim, Jong-Won
    • Bulletin of the Korean Chemical Society
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    • v.31 no.1
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    • pp.104-111
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    • 2010
  • The heterogeneous electron transfer at $SiMo_{12}O_{40}^{4-}$ monolayers on GC, HOPG, and Au electrode surfaces are investigated using cyclic voltammetric and electrochemical impedance spectroscopic (EIS) methods. The electron transfer of negatively charged $Fe(CN)_6^{3-}$ species is retarded at $SiMo_{12}O_{40}^{4-}$-modified electrode surfaces, while that of positively charged $Ru(NH_3)_6^{3+}$species is accelerated at the modified surfaces. This is due to the electrostatic interactions between $SiMo_{12}O_{40}^{4-}$ layers on surfaces and charged redox species. The electron transfer kinetics of a neutral redox species, 1,1‘-ferrocenedimethanol (FDM), is not affected by the modification of electrode surfaces with $SiMo_{12}O_{40}^{4-}$, indicating the $SiMo_{12}O_{40}^{4-}$ monolayers do not impart barriers to electron transfer of neutral redox species. This is different from the case of thiolate SAMs which always add barriers to electron transfer. The effect of $SiMo_{12}O_{40}^{4-}$ layers on the electron transfer of charged redox species is dependent on the kind of electrodes, where HOPG surfaces exhibit marked effects. Possible mechanisms responsible for different electron transfer behaviors at $SiMo_{12}O_{40}^{4-}$ layers are proposed.

Precise Adsorption Measurement Technique by a Phase Modulated Ellipsometry (편광변조 타원해석법에 의한 정밀 흡착측정기술)

  • Choi, B.I.;Nham, H.S.;Park, N.S.;Youn, H.S.;Lim, Tong-Kun
    • Korean Journal of Optics and Photonics
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    • v.15 no.6
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    • pp.531-538
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    • 2004
  • Studies of adsorption isotherms with sharp step-wise layer condensation help us to better understanding of two dimensional layers. For this, an adsorption isotherm apparatus, using a phase modulated ellipsometric technique, has been constructed and an adsorption experiment has been performed. With subatomic scale resolution(∼0.3 $\AA$), the adsorption processes could be observed by ellipsometric signals. On measurement of multilayer adsorption of argon on highly oriented pyrolytic graphite(HOPG), thousands of adsorbed layers were observed at 34.04 K, which suggests that the adsorption is completely wet. On the contrary nine sharp layers of steps for adsorptions and desorptions were observed at 67.05 K. These isotherms obtained can provide a lot of information about thermodynamic states, bonding energies between adsobate and substrate, and structure transitions in the adsorbed film.

Study on Graphene Thin Films Grown on Single Crystal Sapphire Substrates Without a Catalytic Metal Using Pulsed Laser Deposition

  • Na, Byoung Jin;Kim, Tae Hwa;Lee, Cheon;Lee, Seok-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.2
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    • pp.70-73
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    • 2015
  • Many studies have used chemical vapor deposition (CVD) to grow graphene. However, CVD is inefficient in terms of production costs, and inefficient for mass production because a transfer process using a catalytic metal is needed. In this study, graphene thin films were grown on single crystal sapphire substrates without a catalytic metal, using pulsed laser deposition (PLD) to resolve these problems. In addition, the growth of graphene using PLD was confirmed to have a close relationship with the substrate temperature.

Electrochemical Property of Immobilized Spinach Ferredoxin on HOPG Electrode

  • Nam Yun-Suk;Kim, You-Sung;Shin, Woon-Sup;Lee, Won-Hong;Choi, Jeong-Woo
    • Journal of Microbiology and Biotechnology
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    • v.14 no.5
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    • pp.1043-1046
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    • 2004
  • The stability and electrochemical properties of a self-assembled layer of spinach ferredoxin on a quartz substrate and on a highly oriented pyrolytic graphite electrode were investigated. To fabricate the ferredoxin self-assembly layer, dimyristoylphosphatidylcholine was first deposited onto a substrate for ferredoxin immobilization. Surface analysis of the ferredoxin layer was carried out by atomic force microscopy to verify the ferredoxin immobilization. To verify ferredoxin immobilization on the lipid layer and to confirm the maintenance of redox activity, absorption spectrum measurement was carried out. Finally, cyclic-voltammetry measurements were performed on the ferredoxin layers and the redox potentials were obtained. The redox potential of immobilized ferredoxin had a formal potential value of -540 mV. It is suggested that the redox-potential measurement of self-assembled ferredoxin molecules could be used to construct a biosensor and biodevice.

Direct Measurement of Spindle Motion Error Using a Regular Crystalline Lattice and a Scanning Tunneling Microscope

  • Chaikool, Patamaporn;Aketagawa, Masato;Okuyama, Eiki
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.4
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    • pp.11-15
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    • 2008
  • Metrology tools with the ability to measure spindle motion error on the order of a nanometer are required due to recent advances in nanotechnology. We propose a direct measurement method for the radial motion error of a precision spindle using a regular crystalline lattice and a scanning tunneling microscope (STM). A highly oriented pyrolytic graphite (HOPG) crystal combined with an STM is used as a two-dimensional reference scale. The measurement principle and the preliminary experimental results are discussed in this article. The preliminary experimental results demonstrated that the proposed method has the capability to incorporate a two-dimensional encoder to measure the spindle motion error.

Nano Patterning on Graphite by Ion-Beam Sputtering

  • Yoon, Sun Mi;Kim, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.214-214
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    • 2013
  • Ion beam sputtering (IBS) by collision of energetic ions at surfaces is one of the representative methods for physical self-assembly. It is in spotlight as an easy tool to make nano structures in various sizes and shapes by controlling physical variablesWe investigate nano patterning on graphite. We found well-ordered nano ripple patterns after sputtering under the oblique angle and mean wavelengths of these ripples could be controlled as ion fluence increases from sub-10 nm to 80 nm. Each nano ripple is terminated by nano buds, which look like a cotton bud. We also examined the formation of various patterns on graphite by sputtering during swinging the sample at a constant angular velocity that have been never reported.

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Experiment of Graphene Etching by Using $O_2$ Plasma Ashing ($O_2$ plasma ashing을 이용한 그라핀 식각 실험)

  • Oh, Se-Man;Kim, Eun-Ho;Park, Jae-Min;Cho, Won-Ju;Jung, Jong-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.424-424
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    • 2009
  • 그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

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