• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.234-235
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1231-1234
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• 2012

A one-pot efficient procedure for the synthesis of 2,4,5-triaryl-1H-imidazole derivatives in good to excellent yields by reaction between hexamethyldisilazane and arylaldehydes, benzyl alcohols, benzyl halides in the presence of molecular iodine has been developed. The remarkable advantages of this method are the simple workup procedure, high yields of products, and the availability of reagents.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.171-171
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• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.341-342
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• 2012

일반적으로 낮은 표면에너지는 표면조도 및 표면 화학구조에 의하여 제어된다. 이 실험에서는 $SiO_x$ 박막의 표면에너지를 낮추기 위하여 인가전력을 제어하였으며, 동시에 표면 조도를 변화하였다. 인가전력의 의한 표면 조도 및 화학구조를 AFM과 FT-IR로 분석을 하였다. 더하여, 표면에너지의 변화를 접촉각 측정기로 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.113-113
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• 2016

반도체 산업이 발전하고 기술이 향상됨에 따라 미세화되고 복잡한 구조의 소자가 개발되고 있으며, 2차원 소재 등 다양하고 새로운 소재들이 발견 및 연구되고 있다. 새로운 소재 또는 기술을 이용한 고품질 소자를 개발하기 위해서는 우수한 특성(높은 순도, 우수한 분해 및 반응 특성)을 지닌 증착소재의 개발 및 평가가 선행되어야 한다. 기존의 증착소재의 기본 물성을 측정하는 방법인 단순 기상 Fourier transform infrared spectroscopy(FT-IR) 분석법은 실제 공정에서의 증착경향을 대변하기 어렵다는 단점이 있다. 이러한 단점을 보완하기 위해 개조된 attenuated total reflection (ATR) 액세서리를 이용하여 실제 공정에서의 증착경향을 대변하고자 하였다. 본 연구에서는 반도체 증착소재의 분해 및 표면 흡착 특성을 분석하기 위해 ATR-FTIR 분석법을 이용하여 수행하였으며, 분산안정도에 따른 nanoparticle을 ATR의 크리스탈 표면에 분포시켜 hexamethyldisilazane(HMDS) source의 흡착 효율을 향상시키는 연구를 수행하였다. Nanoparticle의 분산안정도를 높이기 위하여 suspension 상태에서 pH, sonication, 분산제를 이용하였으며, nanoparticle을 ATR crystal 표면에 분포하여 분석한 결과, 분산안정도에 따라 HMDS의 흡착효율이 달라짐을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.210.2-210.2
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• 2015

유기 박막 트랜지스터(Organic Thin Film Transistor, OTFT)기반의 바이오센서는 저비용 제작 및 플렉서블 소자 제작이 가능하여 많은 주목을 받아오고 있다. 본 연구에서는, hexamethyldisilazane (HMDS) 표면 처리된 $Si/SiO_2$ 기판 위에 진공 증착 공정을 이용하여 pentacene 기반의 OTFT를 제작한 후, 수용성 매체에 대한 안정성을 향상시키기 위하여 저분자 물질인 tetratetracontane (TTC)를 진공 증착 공정을 이용하여 증착하였으며, cyclized perfluoropolymer (CYTOP)을 용액 공정으로 코팅하여 bilayer의 passivation 층을 형성하였다. 실제 제작된 OTFT의 수용성 매체에 대한 안정성을 테스트하기 위하여 소자에 수용성 phosphate buffered saline (PBS)용액을 투하하여 10분에 걸쳐 1분 간격으로 transistor의 transfer 특성을 측정하였다. 또한 측정된 $I_d-V_g$ 곡선 데이터를 이용하여 시간에 따른 드레인 전류, 이동도, 문턱 전압, 점멸비 등의 수치를 산출하였다. 그리고, 그 $I_d-V_g$ 곡선 데이터와 산출된 데이터들을 증류수가 투하된 OTFT 소자의 $I_d-V_g$ 곡선 데이터와 산출된 데이터들과 비교하였다. 결론적으로, TTC/Cytop bilayer passivation 층이 형성된 OTFT 소자는 인체 내 혈액의 pH와 유사한 PBS 용액 하에서도 안정적인 구동 성능을 보여 바이오센서로 응용될 수 있는 가능성이 있다는 결론을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.