• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.719-724
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• 2002

Celgard and Durapore membranes were plasma-treated to enhance the hydrophobicity and durability to amine solution. The plasma gases or vapors used were $CF_4$, Hexafluorobenzene(HFP), Pentafluoropyridine(PFP) and Hexamethyldisiloxane(HMDS). The surface structure of plasma treated membranes was analyzed by FT-IR spectra. The contact angles of plasma treated Celgard and Durapore were dependent of the plasma gases used. $CF_4$ and HMDS plasma increased the contact angles of Celgard and Durapore, while HFB and PFP plasma decreased the contact angles. Durability to monoethanolamine(MEA) solution was enhanced for $CF_4$ plasma-treated Durapore, while the durability was not good for plasma-treated Celgard.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.179-179
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.85-90
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• 2007

This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films for M/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers was carried out by APCVD using HMDS (hexamethyildisilane: $Si_{2}(CH_{3})_{6})$ precursor. Each samples were analyzed by XRD (X-ray diffraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electron diffraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin film were evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMS applications in conjunction with Si fabrication technology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.137-137
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• 2008

In-situ doped polycrystalline 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS(hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and 0 ~ 100 sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in polycrystalline 3C-SiC thin films grown on $SiO_2$/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of polycrystalline 3C-SiC thin films decreased from 8.35 $\Omega{\cdot}cm$ with $N_2$ of 0 sccm to 0.014 $\Omega{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to 29.299 $cm^2/V{\cdot}S$, respectively.

• Korean Journal of Materials Research
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• v.7 no.9
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• pp.811-823
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• 1997

차세대 반도체 배선분야에서, Cu박막은 현재의 AI을 대체할 물질로서 대두되고 있으며 CVD에 의한 선택적 증착은 Cu의 patterning과 관련하여 상당한 관심을 일으키고 있다. 본 연구에서는 (hfac)Cu(VTMS)의 유기원료를 사용하여, CVD공정변수, 운반기체, 표면 처리 공정에 따른 SiO$_{2}$, TiN, AI기판에 대한 선택성을조사하였다. 선택성은 저온(15$0^{\circ}C$), 저합(0.3Torr)에서 향상될 수 있었으며, 특히, HMDS in-situ-predosing공정에 의해 더욱 향상될 수 있었다. 모든 경우에 대해, H$_{2}$운반기체가 Ar 보다 짧은 incubation time과 높은 증착 속도가 얻어졌으며, Cu입자들의 크기가 작고 연결상태가 보다 양호하였다. 이는 H$_{2}$경우에 기판표면에 원료가 흡착되어 핵을 형성시키는 위치 (-OH)가 보다 많이 제공되기 때문으로 여겨진다. 이러한 미세구조의 차이는 H$_{2}$경우에 보다 낮은 비저항을 얻게 했다. HMDS in-situ predosing공정에 의한 Cu박막내 불순물 차이는 없었으며 뚜렷한 비저항의 차이도 나타나지 않았다.

• Journal of Powder Materials
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• v.18 no.3
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• pp.269-276
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• 2011

The synthesis behavior of nanoporous silica aerogel in the macroporous ceramic structure was observed using TEOS as a source material and glycerol as a dry control chemical additive (DCCA). Silica aerogel in the macroporous ceramic structure was synthesized via sono-gel process using hexamethyldiazane (HMDS) as a modification agent and n-hexane as a main solvent. The wet gel with a modified surface was dried at $105^{\circ}C$ under ambient pressure. The addition of glycerol appears to give the wet gel a more homogeneous microstructure. However, glycerol also retarded the rate of surface modification and solvent exchange. Silica aerogel completely filled the macroporous ceramic structure without defect in the condition of surface modification (20% HMDS/nhexane at 36hr).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.35-45
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• 2023

In this study, the sludge formation in the wastewater drain from the advanced packaging process mechanisms are revealed as well as the key factors, materials, and sludge prevention methods using surfactant. Compared with that of conventional packaging process, advanced packaging process employ similar process to the semiconductor fabrication process, and thus many processes may generate wastewater. In specific, a large amount of wastewater may generate during the carrier wafer bonding, photo, development, and carrier wafer debonding processes. In order to identify the key factors for the formation of sludge during the advanced packaging process, six types of chemicals including bonding glue, HMDS, photoresist (PR), PR developer, debonding cleaner, and water are utilized and mixing evaluation is assessed. As a result, it is confirmed that the black solid sludge is formed, which is originated by the sludge seed formation by hydrolysis/dehydration reaction of HMDS and sludge growth via hydrophobic-hydrophobic binding with sludge seed and PR. For the sludge prevention investigation, three surfactants of CTAB, PEG, and shampoo are mixed with the key materials of sludge, and it is confirmed that the sludge formations are successfully suppressed. The underlying mechanism behind the sludge formation is that the carbon tails of the surfactant bind to PR with hydrophobic-hydrophobic interaction and inhibit the reaction with HMDS-based slurry seeds to prevent the sludge formation. In this regard, it is expected that various problems like clogging in drains and pipes during the advanced packaging process may effectively solve by the injection of surfactants into the drains.