• 전기의세계
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• v.28 no.9
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• pp.43-50
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• 1979

Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• Journal of the Korean Magnetics Society
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• v.7 no.4
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• pp.191-195
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• 1997

$Co_{84}Hf_{16}$ (1300$\AA$, 2150$\AA$) thin films were prepared by dc magnetron sputtering method. To investigate the uniaxial anisotrpy of the sample, the saturation and effective magnetization of the thin films were measured by VSM and FMR, respectively. The spectroscopic splitting g factor were estimated from the ferromagnetic resonance curves. For 1300$\AA$, 2150$\AA$, the effective magnetization was measured at the temperatures from T=77K to T=300K. The results were analyzed in terms of Bloch's law $M_s(T)=M_s(0)(1BT^{3/2}CT^{5/2}$. The Bloch coefficient B and C were determined by fitting. $M_{eff}(0)$ was obtained by extrapolating $M_{eff}$ to 0 K. From this result, the spinwave stiffness constants D was also determined and the exchange stiffness constants $A_{eff}$ were calculated by Kittel's resonance conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.100-100
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• 2011

Nanomaterial architecture with highly ordered, vertically oriented $TiO_2$ nanotube arrays shows a good promise for diverse technological applications. As inspired from the literature reports that Nickel modification can improve the photocatalytic activity of $TiO_2$, it was planned to coat Ni into the $TiO_2$ matrix. In this study, first $TiO_2$ nanotubes(TiNTs) were prepared by anodization (60V,3min) in HF-free aqueous electrolyte on ultrasonically cleaned polished titanium sheet substrates ($1{\times}7cm^2$). The typical thickness of the sintered TiNT ($500^{\circ}C$for10min) was ~1 micronas confirmed from the FESEM study. In the next part, as-anodized and sintered TiNT/Ti photoanodes were used to coat Ni by AC electrodeposition from aqueous 0.1M nickel sulphate solution. During AC electrodeposition, conditions such as 1V DC offset voltage, 9V amplitude (peak-to-peak) and 750 Hz frequency were fixed constant and the deposition time was varied as 0.5 min, 1 min, 2 min and 10 min. The photoelectrochemical performance of pristine and Ni modified TiNT/Ti photoanodes was measured in 1N NaOH electrolyte under 1 SUN illumination in the potential range of -1V and 1.2V versus Ag/AgCl reference electrode. The photocurrent performance of TiNT/Ti photoanode decreased upon Ni modification and the results were confirmed after repeated experiments. This suggests us that Ni modification inhibits the photoelectrochemical performance of $TiO_2$ nanotubes.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2002.11a
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• pp.502-511
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• 2002

컴퓨터의 기술적 발전은 사회 여러 분야에 막대한 영향을 끼쳤다. 그중 악보 인식분야에도 커다란 영향을 주었다 그러나, On-line 상에서 그린 악보를 실시간으로 정형화된 악보형태로 변환하는 처리에 대한 연구가 미흡하여 이에 대한 연구가 필요하다. 본 논문에서는 실시간으로 악보를 인식하고, 사용자의 편의를 도모하기 위해 DP(Dynamic Programming) 매칭법을 이용한 On-Line 악보인식에 관한 방법을 제안하였다. 본 연구에서는 실시간으로 입력되는 악상기호를 인식하기 위해, 가장 유효한 정보인 악상 기호내의 방향, x, y 좌표를 이용하여 벡터형태로 추출한 후 음표와 비음표(쉼표, 기타기호)의 두개의 그룹으로 나누어진 표준패턴과의 DP매칭을 통해 인식한다. 먼저 tablet을 통해 실시간으로 악상 기호를 입력할 때 생기는 x, y좌표를 이용하여, 펜의 움직임에 대한 16방향 부호화를 수행한다. 음표와 비음표를 구분하기 위한 시간을 줄이고자 16방향 부호화를 적용하치 않고 사사분면부호화를 적용한다. 음표를 약식으로 그릴 경우 음표 머리에 해당하는 부분의 좌표는 삼사분면에 분포하고, 폐곡선의 음표일 경우에는 좌표가 사사분면에 고르게 나타난다. 폐곡선을 제외한 음표의 머리는 폐곡선과 같은 조건이면서 입력받은 y좌표값들 중에서 최소값과 최대값을 구한 다음 2로 나눈 값을 지나는 y좌표의 개수가 임의의 임계값 이상이면 음표로 판단한다. 위 조건을 만족하지 않을 경우 비음표로 취급한다. 음표와 비음표를 결정한 다음, 입력패턴과 표준패턴과의 DP매칭을 통하여 벌점을 구한다. 그리고 경로탐색을 통해 벌점에 대한 각각의 합계를 구해 최소값을 악상기호로 인식 하였다. 실험결과, 표준패턴을 음표와 비음표의 두개의 그룹으로 나누어 인식함으로써 DP 매칭의 처리 속도를 개선시켰고, 국소적인 변형이 있는 패턴과 특징의 수가 다른 패턴의 경우에도 좋은 인식률을 얻었다.r interferon alfa concentrated solution can be established according to the monograph of EP suggesting the revision of Minimum requirements for biological productss of e-procurement, e-placement, e-payment are also investigated.. monocytogenes, E. coli 및 S. enteritidis에 대한 키토산의 최소저해농도는 각각 0.1461 mg/mL, 0.2419 mg/mL, 0.0980 mg/mL 및 0.0490 mg/mL로 측정되었다. 또한 2%(v/v) 초산 자체의 최소저해농도를 측정한 결과, B. cereus, L. mosocytogenes, E. eoli에 대해서는 control과 비교시 유의적인 항균효과는 나타나지 않았다. 반면에 S. enteritidis의 경우는 배양시간 4시간까지는 항균활성을 나타내었지만, 8시간 이후부터는 S. enteritidis의 성장이 control 보다 높아져 배양시간 20시간에서는 control 보다 약 2배 이상 균주의 성장을 촉진시켰다.차에 따른 개별화 학습을 가능하게 할 뿐만 아니라 능동적인 참여를 유도하여 학습효율을 높일 수 있을 것으로 기대된다.향은 패션마케팅의 정의와 적용범위를 축소시킬 수 있는 위험을 내재한 것으로 보여진다. 그런가 하면, 많이 다루어진 주제라 할지라도 개념이나 용어가 통일되지 않고 사용되며 검증되어 통용되는 측정도구의 부재로 인하여 연구결과의 축적이 미비한 상태이다. 따라서, 이에 대한 재고와 새로운 방향 모색이 필요하다고 사료된다.로 사료되며, 임신관련 cytokine에 대한 다양한 연구가 요구되고 있다.₂/Hf(Variable)/Si 계에서 HfO₂ 박막이 Si 기판위에 직접 증착되면, 순수 HfO₂ 박막의

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.833-836
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• 2005

Nano-gap trench is fabricated by the novel electrochemical etching technique using forward biased PN junction formed at the backside of the wafer. PN junction is formed using boron nitride wafer and the concentration of the boron doping is the high value of $1{\times}10^{19}$ $cm^{-3}$. The electro-chemical etching is performed in the 5% HF solution under the forward bias voltage of $1{\sim}2V$. The relationship between the etch rate of the trench and the voltage of the forward bias is investigated and the dependence of the gap for the voltage also examined. The etch rate increase from 0.027 ${\mu}m/min$ to 0.031 ${\mu}m/min$ as the value of the applied voltage increase from 1V to 2V, but the the gap is kept constant value of 40 nm.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.146-150
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• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.