• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Journal of ILASS-Korea
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• v.18 no.2
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• pp.81-86
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• 2013

To comply with the regulation of the reinforcing Clean Air Conservation Act, it is necessary for the semiconductor manufacturers to develop effective low-concentration acid gas abatement system to treat the flue gas. The low-concentration acid gas was found to be harder to deal with than the high-concentration one. In this study, the effect of various potential treatments such as air-assist nozzle spraying, magnetizing the scrubbing water, and adding surfactants to spraying and scrubbing water were investigate through the application of the statistical ANCOVA method, which was proved to be very useful tool when the inlet concentration of acid gas could not be controlled precisely and it affected the removal efficiency of the abatement system.

• Analytical Science and Technology
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• v.30 no.4
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• pp.174-181
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• 2017

Bio-liquid is a liquid by-product of the hydrothermal carbonization (HTC) reaction, converting wet biomass into solid hydrochar, bio-liquid, and bio-gas. Since bio-liquid contains various compounds, it requires efficient sampling method to extract the target compounds from bio-liquid. In this research, fatty acid methyl ester (FAME) in bio-liquid was extracted based on hollow fiber supported liquid phase microextraction (HF-LPME) and determined by Gas Chromatography-Flame Ionization Detector (GC-FID) and Gas Chromatography/Mass Spectrometry (GC/MS). The well-known major components of biodiesel, including methyl myristate, palmitate, methyl palmitoleate, methyl stearate, methyl oleate, and methyl linoleate had been selected as standard materials for FAME analysis using HF-LPME. Physicochemical properties of bio-liquid was measured that the acidity was 3.30 (${\pm}0.01$) and the moisture content was 100.84 (${\pm}3.02$)%. The optimization of HF-LPME method had been investigated by varying the experimental parameters such as extraction solvent, extraction time, stirring speed, and the length of HF at the fixed concentration of NaCl salt. As a result, optimal conditions of HF-LPME for FAMEs were; n-octanol for extraction solvent, 30 min for extraction time, 1200 rpm for stirring speed, 20 mm for the HF length, and 0.5 w/v% for the concentration of NaCl. Validation of HF-LPME was performed with limit of detection (LOD), limit of quantitation (LOQ), dynamic range, reproducibility, and recovery. The results obtained from this study indicated that HF-LPME was suitable for the preconcentration method and the quantitative analysis to characterize FAMEs in bio-liquid generated from food waste via HTC reaction.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.853-858
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• 2003

The reaction mechanism of the pyrolysis of sulphonyl oximes ($CH_3-C_6H_4-S(O)_2O-N=C(H)-C_6H_4Y$), in the gas phase is studied theoretically at HF/3-21G, ONIOM (B3LYP/6-31G**:HF/3-21G) and ONIOM (MP2/6- 31G**:HF/3-21G) levels. All the calculations show that the thermal decomposition of sulphonyl oximes is a concerted asynchronous process via a six-membered cyclic transition state. The activation energies (Ea) predicted by ONIOM (B3LYP/6-31G**: HF/3-21G) method are in good agreement with the experimental results for a series of tosyl arenecarboxaldoximes. Five para substituents, Y = $OCH_3$, $CH_3$, H, Cl, and $NO_2$, are employed to investigate the substituent effect on the elimination reaction. Linear Hammett correlations are obtained in all calculations in contrast to the experimental finding.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Journal of Surface Science and Engineering
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• v.36 no.6
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• pp.480-490
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• 2003

Effects of plasma-nitriding on the pitting corrosion of Fe-30at%Al-5at%Cr alloy containing Ti, Hf, and Zr were investigated using potentiostat in 0.1M HCl. The specimen was casted by the vacuum arc melting. The subsequent homogenization was carried out in Ar gas atmosphere at $1000^{\circ}C$ for 7days and phase stabilizing heat treatment was carried out in Ar gas atmosphere at $500^{\circ}C$ for 5 days. The specimen was nitrided in the $N_2$, and $H_2$, (1:1) mixed gas of $10^{-4}$ torr at $480^{\circ}C$ for 10 hrs. After the corrosion tests, the surface of the tested specimens were observed by the optical microscopy and scanning electron microscopy(SEM). For Fe-30at%Al-5Cr alloy, the addition of Hf has equi-axied structure and addition of Zr showed dendritic structure. For Fe-30at%Al-5Cr alloy containing Ti, plasma nitriding proved beneficial to decrease the pitting corrosion attack by increasing pitting potential due to formation of TiN film. Addition of Hf and Zr resulted in a higher activation current density and also a lower pitting potential. These results indicated the role of dendritic structure in decreasing the pitting corrosion resistance of Fe-30Al-5Cr alloy. Ti addition to Fe-30Al-5Cr decreased the number and size of pits. In the case of Zr and Hf addition, the pits nucleated remarkably at dendritic branches.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.287-291
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• 2005

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.12-15
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• 2008

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.223-224
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• 2005

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.