• Transactions on Electrical and Electronic Materials
• /
• 제10권1호
• /
• pp.1-4
• /
• 2009

Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using $Cl_2/HBr$ inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the $HBr/Cl_2$ plasma was analyzed.

• 한국진공학회지
• /
• 제6권4호
• /
• pp.364-371
• /
• 1997

MERIE 플라즈마 장비를 사용하여 실리콘의 트렌치 식각을 HBr, He-$O_2,SiF_4,CF_4$ 등의 가스를 주입하여 수행하였으며 식각 속도, 식각 프로파일 변화, 잔류물 생성 및 표면 상태 등을 관찰하였다. HBr만을 이용한 플라즈마 식각시에는 트렌치 하부 영역에 상당한 횡방향 식각이 일어나 항아리 모양의 식각 프로파일이 관찰되었으며, HBr에 He-$O_2$가스와 $SiF_4$나 $CF_4$등의 주입량을 변화시켜 벽면 기울기와 횡방향 식각의 정도를 제어할 수 있었다. 표면 잔류물 특성 및 표면 거칠기(roughness)등은 HBr/He-$O_2$/$SiF_4$가스를 동시에 주입하여 식각하였을 때 가장 양호한 식각 특성을 나타내었으며, 첨가 가스로 $SiF_4$를 이용함으로써 기존의 C-F계 플라즈마를 이용한 트렌치 식각 특성들보다 우수한 공정 결과를 얻었다. 또 한 $SiF_4$를 이용함으로써 $CF_4$ 첨가시보다 C의 잔류물을 크게 줄이고 표면 손상을 개선할 수 잇음을 X-선 광전자 분석과 주사전자현미경(scanning electron microscopy) 및 AFM(atomic force microscopy)의 결과로써 확인하였다.

• 한국세라믹학회지
• /
• 제40권9호
• /
• pp.886-890
• /
• 2003

단결정 LiNbO$_3$를 helicon wave plasma 방법으로 식각시 bias power와 CF$_4$, HBr, SR$_{6}$가 혼합된 gas 유량에 따른 식각 속도와 rms roughness 값의 특성을 관찰하였다. 식각된 깊이는 surface profiler로 관찰하였으며 rms roughness 값은 Atomic Force Microscopy (AFM)으로 측정하였다. Bias power 증가함에 따라 500W에서 가장 높은 식각 속도와 가장 평탄한 표면형상을 얻을 수 있었으며, CF$_4$, HBr, SF$_{6}$ gas 유량을 각각 10～30 sccm으로 증가시킴에 따라 식각 속도는 CF$_4$, HBr, SF$_{6}$ gas 유량이 10 sccm, 30 sccm, 10 sccm에서 가장 높게 나타났으며, rms roughness 값은 CF$_4$, HBr, SF$_{6}$ gas 유량이 30 sccm, 10 sccm, 30 sccm에서 가장 낮은 표면 조도를 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제23권12호
• /
• pp.915-918
• /
• 2010

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
• /
• pp.10-13
• /
• 2000

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

• 한국전기전자재료학회논문지
• /
• 제13권8호
• /
• pp.651-657
• /
• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Korean Chemical Engineering Research
• /
• 제47권1호
• /
• pp.79-83
• /
• 2009

본 연구에서 고밀도 플라즈마 식각 장치를 사용한 비정질 실리콘 막의 게이트 전극선 형성공정에서 여러 가지 식각 변수가 치수 제어와 식각 속도 및 식각 선택비 등 식각 특성에 미치는 영향을 분석하였다. $Cl_2/HBr/O_2$로 구성된 식각 기체의 전체 유량을 증가시키면 비정질 실리콘의 식각 속도가 증가하나 식각 전후의 형상치수는 변화없이 거의 일정하였다. 전체 유량을 고정시키고 $Cl_2$와 HBr 간의 유량비를 변화시키면 HBr의 유량이 커질수록 비정질 실리콘의 식각 속도가 감소하였다. $O_2$의 유량을 증가시키면 산화막의 식각 속도가 상대적으로 낮아져 식각 선택비를 증가시켜 식각 공정의 안정성을 높이나 게이트 전극선을 경사지게 하는 특성을 보인다. Source power의 증가는 비정질 실리콘 식각 속도의 증가와 더불어 형상치수의 증가를 가져오며, bias power의 증가는 비정질 실리콘과 산화막의 식각 속도를 증가시키나 식각 선택비를 크게 감소시키는 경향을 보였다.

• Transactions on Electrical and Electronic Materials
• /
• 제1권3호
• /
• pp.14-17
• /
• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• 한국전기전자재료학회논문지
• /
• 제17권1호
• /
• pp.1-6
• /
• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 D
• /
• pp.1294-1296
• /
• 1998

Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.