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http://dx.doi.org/10.4313/TEEM.2009.10.1.001

Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma  

Kim, Sung-Ihl (Department of IT Electronics Engineering, Daejon University)
Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.10, no.1, 2009 , pp. 1-4 More about this Journal
Abstract
Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using $Cl_2/HBr$ inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the $HBr/Cl_2$ plasma was analyzed.
Keywords
$Cl_2/HBr$; ICP; ITO; QMS; Langmuir probe system;
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