• 한국전기화학회:학술대회논문집
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• 2001.10a
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• pp.19-19
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• 2001

• The Korean Journal of Nuclear Medicine
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• v.7 no.1
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• pp.45-50
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• 1973

The changes of plasma renin activity, aldosterone concentration, serum sodium-, and potassium levels were studied before and after the water loading followed by diuretics injection. The materials were: 13 non-, 11 normal-, and 11 toxemic pregnancy cases. The plasma renin activity and aldosterone concentration of the cord and postpartum blood were also measured. Following were the results: 1. The plasma renin activity was elevated significantly in normal pregnancy, and slightly in toxemic pregnancy. The serum sodium levels were decreased in pregnancy. 2. The plasma aldosterone concentration was slightly decreased in normal pregnancy, and slightly increased in toxemic pregnancy, however, statistically insignificant. 3. The plasma renin activity of the cord and postpartum blood were lower than those of pregnancy cases. 4. The changes of plasma renin activity after the diuretic administration showed an initial increase, which recovered within 2 hours. These changes were the least in normal pregnancy, and the most in toxemic pregnancy. 5. The changes of plasma aldosterone concentration after the diuretic administration were similar to those of plasma renin activity, although the variations were not so wide.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.1-6
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• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.416-420
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• 1999

The effects of GOD and yeast on glucose content and pH of broiler and porcine blood plasma were investigated. The initial glucose concentration of broiler and porcine blood plasma were $150mg/100cm^{3}\;and\;143mg/100cm^{3}$, respectively. Addition of GOD and yeast decreased glucose contents in broiler and porcine plasma. As expected, plasma glucose content decreased as incubation time increased. While 1080 and 1110 min were required to remove glucose from both broiler and porcine plasma at GOD 5 units/g and 480 and 1020 min were required at GOD 10 units/g, respectively; both required 240 min at 0.3% yeast (w/w). The Maillard reaction can be prevented by desugarization. During the removal of glucose, pH of the plasma decreased. As glucose content in plasma leveled off, the pH value of plasma increased. Therefore, pH may be used as an index of desugarization.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.459-461
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• 1995

An omegatron mass spectrometer was designed and fabricated. Experiments have been performed to demonstrate the instrument's operation in the ECR plasma device. By using this analyzer, mass spectra have been obtained in hydrogen plasmas, and typical results are presented. In the plasma omegatron, downstreaming plasma generated by ECR are entering the analyzer through a smsll floating aperture. We employ a biasing technique to reduce the ion velocity along the magnetic field and to keep the ions from drifting to the side pintos, and thus achieved improved ion collection and sensitivity. Mass spectra obtained show that main positive ion components are $H_3{^+}$ and $H_2{^+}$ with the density ratio of $H_2{^+}$ to $H_3{^+}$ $\simeq$ 0.2.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.327-334
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• 2004

Spectroscopic and electrostatic probe measurements were made to examine plasma characteristics with or without a metal plate for a 10-㎾-class direct-current arcjet Heat fluxes into the plate from the plasma were also evaluated with a Nickel slug and thermocouple arrangement. Ammonia and mixtures of nitrogen and hydrogen were used. The NH$_3$ and $N_2$+3H$_2$ plasmas in the nozzle and in the downstream plume without a plate were in thermodynamical nonequilibrium states. As a result, the H-atom electronic excitation temperature and the $N_2$ molecule-rotational excitation temperature intensively decreased downstream in the nozzle although the NH molecule-rotational excitation temperature did not show an axial decrease. Each temperature was kept in a small range in the plume without a plate except for the NH rotational temperature for NH$_3$ gas. On the other hand, as approaching the plate, the thermodynamical nonequilibrium plasma came to be a temperature-equilibrium one because the plasma flow tended to stagnate in front of the plate. The electron temperature had a small radial variation near the plate. Both the electron number density and the heat flux decreased radially outward, and an increase in H$_2$ mole fraction raised them at a constant radial position. In cases with NH$_3$ and $N_2$+3H$_2$ a large number of NH radical with a radially wide distribution was considered to cause a large amount of energy loss, i.e., frozen flow loss, for arcjet thrusters.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.209-209
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• 2008