• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• 대한화학회지
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• 제51권6호
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• pp.499-505
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• 2007

세자리 비스(이미노)알릴 (N,C,N-집게발) 리간드를 가진 단핵 Ni(II) 착물을 발표하고자 한다. 새로운 착물(2,6-(ArN=CH)2C6H3)NiBr (Ar=2,6-dimethylphenyl (1), 2,6-diisopropylphenyl (2))은 산화성 첨가반응에 의해 Ni(COD)2 (COD=1,5-cyclooctadiene)와 1,3-(ArN=CH)2C6H3Br (bis(N-Ar)-2-bromoisophthalaldimine: Ar=Ph-2,6-Me2, Ph-2,6-iPr2) 으로부터 높은 수율로 합성하였다. 리간드와 니켈 착물에 대한 개선된 합성경로에 대하여 설명하고자 한다. 니켈(II) 착물 1, 2는 적외선 분광학, 수소-핵자기공명, 그리고 원소분석에 의해 구조를 밝혔다. 합성한 니켈 착물을 촉매로 사용하여 에틸렌 중합반응을 시도하였으나 목적하는 에틸렌고분자는 얻어지지 않고 소량의 올리고머가 형성되었다. 본 연구에서 합성한 니켈 착물이 에틸렌고분자 촉매반응에 활성을 보이지 않는 이유는 아마도 집게발 착물의 높은 경직성과 리간드의 비치환성 때문에 반응에 필요한 적합한 조건을 제공하지 못 했다고 사료된다.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.894-898
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• 2011

The first example of lead compound from $Pb(NO_3)_2$ and $H_3L$ N-heterocyclic ligand $(H_3L\;=\;(HO_2C)_2(C_3N_2)(C_3H_7)CH_2(C_6H_4)(C_6H_3)CO_2H)$, $[Pb_4(L')_4]{\cdot}5H_2O$ 1 (L' = OOC$(C_3H_7)(C_3N_2)CH_2(C_6H_4)(C_6H_3)COO)$, has been obtained under hydrothermal condition by decarboxylation, and characterized by elemental analysis, IR, TGDTA, and single-crystal X-ray diffraction. Compound 1 possesses a rare two-dimensional upper-lower offset terrace-like layer structure. In 1, crystallographic distinct Pb(II) ion adopts five-coordination geometry, and two lattice water molecules occupy the voids between 2-D layers. Results of solid state fluorescence measurement indicate that the emission band 458 nm may be assigned to $\pi^*-n$ and $\pi^*-\pi$ electronic transitions within the aromatic systems of the ligand L', however, the emission bands centred at 555 nm, 600 nm and 719 nm may be derived from phosphorescent emission ($\lambda_{excitation}$ = 390 nm).

• 대한의생명과학회지
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• 제11권3호
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• pp.259-266
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• 2005

Mast cells and goblet cells have been known to protect the host against parasites. In this study, we examined the response of the mast cells and goblet cells over a period of 6 weeks in the duodenum, jejunum and ileum of C3H/HeN and C57BL/6 mice infected with Echinostoma hortense (E. hortense). In addition, we investigated whether the worm recovery rate of uninfected mice (the control group) or E. hortense-infected mice (the experimental group) was associated with the number of mast cells and goblet cells. The worm recovery rate was higher in the C3H/HeN mice than in the C57BL/6 mice. The number of goblet cells significantly increased in the experimental group of the C3H/HeN and C57BL/6 mice compared with the control group of both strains (P<0.005). Worm recovery peaked 3 weeks after the infection of the C57BL/6 mice and at 2 weeks after the infection of the C3H/HeN mice, and it was higher in the duodenum than in the jejunum and ileum. However, the infected site in the intestine had no relation with worm expulsion. In the C3H/HeN and C57BL/6 mice, the number of goblet cells in the experimental group was significantly higher than that in the control group (P<0.005). The number reached a peak 2 weeks after the infection and it even increased in duodenum, jejunum and ileum. The increased number of goblet cells was retained 6 weeks after infection. The number of goblet cells was higher in the C3H/HeN mice than in the C57BL/6 mice (P<0.01). These results indicate that goblet cells are related with the worm expulsion. Furthermore, immunohistostaining of the antral intestinal walls for lectin showed the significant increase of the number of goblet cells in the experimental group (P<0.001). The high infection rate in the duodenum was found during the early infection. An increased infection rate in the jejunum and ileum was found 3 weeks after infection and the infection rate was higher in the C3H/HeN mice than in the C57BL/6 mice. Taken together, the present study indicates that goblet cells, rather than mast cells, may play critical roles in parasite expulsion.

• 대한화학회지
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• 제59권1호
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• pp.9-17
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• 2015

풀러렌(fullerene)의 내부에 캡슐화될 수 있는 물 분자의 수와 물 분자들이 증가함에 따라 풀러렌의 안정적인 구조에 미치는 영향을 조사하기 위해 밀도 범함수 이론(density functional theory, DFT)을 이용하여 풀러렌-물 클러스터$(H_2O)_n@C_{60}$, (n=1-10)의 구조 변화에 따른 열역학적 안정성 및 결합에너지를 계산하였다. 각각의 구조들에 대해서 여러 이론 수준에서 최적화하였으며 진동주파수를 계산하여 가장 안정한 구조를 조사하고 IR 스펙트럼을 예측하였다. 또한 풀러렌 내의 물 분자 수가 증가함에 따른 수소결합의 세기 변화를 순수한 물 클러스터$(H_2O)_n$, (n=1-6)의 수소결합과 비교 분석하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.87-87
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• 2018

다이아몬드 상 탄소(diamond-like carbon, DLC)는 상당량의 $sp^3$ 결합을 가지는 비정질 탄소(a-C) 또는 수소화 비정질 탄소(a-C:H)로 이루어진 준안정 형태의 탄소이다. DLC는 전기 저항과 굴절률이 높고 화학적으로 다른 물질과 반응하지 않으며, 마찰계수가 낮고 경도가 높아 자기 디스크, 광학 소자 등의 다양한 분야에서 적용되고 있다[1,2]. 또한 다이아몬드에 비해 상온에서 성장이 가능할 정도로 합성온도가 낮아 적용 기판의 제한이 거의 없고, 증착 방법과 조건에 따라 탄소 결합의 다양성과 비정질성이 변화하기 때문에 넓은 범위의 특성을 얻을 수 있는 장점이 있다. 지금까지 DLC 박막의 광학적 특성, 특히 굴절률, 광학적인 에너지 밴드 갭, 자외선과 적외선 투과성에 대해서는 많은 연구가 진행되었으나 가시광선의 투과성에 대한 연구는 제한적이며[4], 가시광선 투과도 개선에 대한 연구는 전무하다. 본 연구에서는 ITO 기판 위에 DLC를 합성하고 기계적 특성과 가시광선 영역 투과도를 조사하였다. RF-PECVD(radio frequency plasma enhanced chemical vapor deposition) 방법에 의해서 $C_2H_2+Ar$ 혼합 가스 비율과 $C_2H_2+N_2$ 혼합 가스 비율을 변화시켜 ITO 기판 위에 DLC 박막을 합성하였다. 공정 압력과 rf-power, 증착시간, 기판온도는 0.2 torr, 40 W, 5 분, $50^{\circ}C$로 고정하고, 공정 가스는 $C_2H_2+Ar$과 $C_2H_2+N_2$가 200 sccm이 되도록 비율을 변화하였다. $C_2H_2:Ar$과 $C_2H_2:N_2$의 비율은 180 : 20, 160 : 40, 140 : 60, 120 : 80, 100 : 100이 되도록 가스의 유량을 조절하였다. 투과도는 가시광선(380 ~ 780 nm) 범위에서 측정하였고 두께와 표면조도는 AFM으로 측정하였다. 투과도는 $C_2H_2+Ar$의 Ar 가스 비율이 증가할수록 증가해 140 : 60일 때 최댓값을 나타낸 후 다시 감소하였다. $C_2H_2+N_2$ 투과도는 $N_2$ 가스 비율이 증가할수록 감소하는 경향을 나타내었다. 표면 거칠기는 $C_2H_2+Ar$ 혼합 가스를 사용한 경우의 Ar의 가스 비율이 증가할수록 증가하였다. 그러나 $C_2H_2+N_2$ 혼합 가스를 사용한 경우에는 $N_2$ 가스의 혼합 비율이 증가할수록 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 추계학술대회 논문집
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• pp.178-181
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• 2005

Quaternary Ti-Si-C-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating (AIP) and sputtering techniques using Ti and Si targets, in an $Ar/N_2/CH_4$ gaseous mixture. The crystallinity, bending status, and microstructure of the Ti-Si-C-N coatings were measured by X-ray diffractometer (XRD) and X-ray photoelectron spectroscope (XPS), The micro-hardness of Ti(C,N) and Ti-Si-N coatings were about 30 and 40 GPa, respectively. As the Si was incorporated into Ti(C,N) coatings, the Ti-Si-C-N coatings having Si content of $8.9\;at.\%$ showed the maximum hardness value of about 55 GPa. In this work, the microstructure and mechanical properties of Ti-Si-C-N coatings were systematically investigated.

• 열처리공학회지
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• 제8권4호
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• pp.289-301
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• 1995

The effect of Air/$C_3H_8$ gas addition on the compound layer growth of steels nitrocarburised in $NH_3+Air+C_3H_8$ mixed gas atmospheres was investigated. It is considered that amount of residual $NH_3$ was varied according to alternation of Air/$C_3H_8$ mixing ratio and volume content. The compound layer formed from nitrocarburising was composed of ${\varepsilon}-Fe_{2-3}$(C, N) and ${\gamma}^{\prime}-Fe_4$(C, N). According as Air/$C_3H_8$ mixing ratio increased, the superficial content of ${\gamma}^{\prime}-Fe_4$(C, N) within the compound layer was increased, at the same time the growth rate of compound layer and porous layer was increased. In the case of alloy steel at the fixed gas composition, the growth rate of compound layer and porous layer was worse than carbon steel and compound layer phase composition structure primarily consisted of E phase. As the carbon content of materials was increasing in the given gas atmospheres, the growth rate of compound layer and porous layer was increased and the superficial content of ${\varepsilon}-Fe_{2-3}$(C, N) within the compound layer was increased.

• 대한수학회보
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• 제48권4호
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• pp.673-688
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• 2011

Let $n{\geq}2$ be an even integer. We investigate that if an odd mapping f : X ${\rightarrow}$ Y satisfies the following equation $2_{n-2}C_{\frac{n}{2}-1}rf\(\sum\limits^n_{j=1}{\frac{x_j}{r}}\)\;+\;{\sum\limits_{i_k{\in}\{0,1\} \atop {{\sum}^n_{k=1}\;i_k={\frac{n}{2}}}}\;rf\(\sum\limits^n_{i=1}(-1)^{i_k}{\frac{x_i}{r}}\)=2_{n-2}C_{{\frac{n}{2}}-1}\sum\limits^n_{i=1}f(x_i),$ then f : X ${\rightarrow}$ Y is additive, where $r{\in}R$. We also prove the stability in normed group by using shadowing property and the Hyers-Ulam stability of the functional equation in Banach spaces and in Banach modules over unital C-algebras. As an application, we show that every almost linear bijection h : A ${\rightarrow}$ B of unital $C^*$-algebras A and B is a $C^*$-algebra isomorphism when $h(\frac{2^s}{r^s}uy)=h(\frac{2^s}{r^s}u)h(y)$ for all unitaries u ${\in}$ A, all y ${\in}$ A, and s = 0, 1, 2,....