• Title/Summary/Keyword: H.N.C

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The Crystal and Molecular Structure of Piperidinothiosemicarbazide (Piperidinothiosemicarbazide의 結晶 및 分子構造)

  • Koo, Chung Hoe;Kim Hoon Sup;Chang Chong Hwan
    • Journal of the Korean Chemical Society
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    • v.19 no.2
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    • pp.85-91
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    • 1975
  • The crystal structure of piperidinothiosemicarbazide, $C_6H_{13}N_3S$, has been determined by single crystal X-ray analysis. The space group is P21/c with four molecules in the unit cell of dimensions $a=14.68{\pm}0.04,\;b=4.59{\pm}0.02,\;c=12.92{\pm}0.04{\AA}\;and\;{\beta}=109.4{\pm}0.2^{\circ}$. Three-dimensional photographic intensities were estimated visually. The structure has been solved by an interpretation of a Patterson synthesis and refined by block-diagonal least-squares methods to give a final R value of 0.14 for 378 observed independent reflections. There are two independent hydrogen bonds in the structure. One of them is of the type N-H${\ldots}$S with the length 3.28 and $3.39{\AA}$, and another is of the type N-H${\ldots}$N with the length $3.03{\AA}$. Apart from the hydrogen bonding system the molecules are held together in the crystal by van der Waals forces.

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Study on Formation and Properties of Dioxomolybdenum Complexes (디옥소몰리브덴 착물의 합성과 그 성질에 대한 연구)

  • Sang-Oh Oh;Bon-Kweon Koo
    • Journal of the Korean Chemical Society
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    • v.30 no.5
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    • pp.441-448
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    • 1986
  • Dioxobis(sub.-salicylaldiminato) molybdenum (VI) complexes, $MoO_2\;(X-sal-N-R)_2,\;(X=H,\;5-CH_3,\;R=C_6H_5,\;p-F-C_6H_4,\;m-Cl-C_6H_4,p-I-C_6H_4\;and\;p-C_2H_5-C_6H_4)$, have been prepared by reactions of dioxobis(sub.-salicylaldehydato) molybdenum (VI), $MoO_2(X-sal)_2$ with primary amines, in which $MoO_2(X-sal)_2$ complexes were obtained by acidification of a mixture solution of ammonium paramolybdate in water and appropriate salicylaldehyde in methanol. All these complexes show two strong Mo=O stretching imodes in the 900-940$cm^{-1}$ and p.m.r. spectra exhibited only one signal for the azomethine group. These results confirmed that the complexes are six-coordinated octahedron with a $cis-MoO_2$ group and the geometrical configurations of the complexes possess a C2 axis of symmetry. From the mass analyses of the complexes, it found that the composition ratios of $MoO_2$ : ligand are 1 : 2. The charge transfer transition corresponding to N-Mo, and O-Mo occured at 29,000$cm^{-1}$ and 32,000$cm^{-1}$ respectively. Where, the complexes were found to be non-ionic materials by conductivity measurements in dimethylformamide.

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SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes (PECVD와 NO 어닐링 공정을 이용하여 제작한 N-based 4H-SiC MOS Capacitor의 SiC/SiO2 계면 특성)

  • Song, Gwan-Hoon;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.447-455
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    • 2014
  • In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

The Crystal and Molecular Structure of P-Aminobenzaldehyde Cyclohexylthiosemicarbazone (P-Aminobenzaldehyde Cyclohexylthiosemicarbazone의 결정 및 분자구조)

  • Chung Hoe Koo;Chong Hee Kim;Young Ja Park
    • Journal of the Korean Chemical Society
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    • v.25 no.6
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    • pp.343-350
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    • 1981
  • The crystal and molecular structure of P-aminobenzaldehyde cyclohexylthiosemicarbazone, C14H20N4S, has been determined from 2712 integrated intensities measured on a computer controlled four circle diffractometer with monochromated $CuK_{\alpha}$, X-ray radiation. The crystals are monoclinic, space group C2/c with eight molecules in a unit cell of dimensions, a = 12.488(2), b = 12.276(4), c = 19.997(6)${\AA}$ and ${\beta}=103.55(3)^{\circ}$. The structure was solved by Patterson and Fourier method and refined by a full-matrix least squares method to a final R value of 0.058 for all reflections. The C(8)-S bond is trans to N(2)-N(3) and C(8)-N(1) is cis to N(2)-N(3) bond. The cyclohexane ring has chair conformation and makes an angle of $40.7^{\circ}$ with the benzene ring. The molecules are linked by N(2)H…S hydrogen bonds into dimer-like units which are held together by $N-H{\ldots}N$ hydrogen bonds. Sulfur accepts second rather weak hydrogen bond from N(4). An intramolecular hydrogen bond exists between N(1) and N(3) atoms.

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Technological Trends of C-/X-/Ku-band GaN Monolithic Microwave Integrated Circuit for Next-Generation Radar Applications (차세대 레이더용 C-/X-/Ku-대역 GaN 집적회로 기술 동향)

  • Ahn, H.K.;Lee, S.H.;Kim, S.I.;Noh, Y.S.;Chang, S.J.;Jung, H.U.;Lim, J.W.
    • Electronics and Telecommunications Trends
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    • v.37 no.5
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    • pp.11-21
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    • 2022
  • GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method (반응성 RF 마그네트론 스퍼터링 법을 이용한 AIN/SiC 구조의 제작 및 특성)

  • Kim, Yong-Seong;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.977-982
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    • 2005
  • Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

Effects of iron atom, substrate on two-dimensional C2N crystals

  • Noh, Min Jong;Kim, Yong Hoon
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.288-291
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    • 2016
  • Recently, there has been a lot of researches related to two-dimensional (2D) materials due to their new properties and applications emerging upon 2D confinement. A new type of graphene like two-dimensional layer material, nitrogenated holey two-dimensional structure C2N-h2D, that is possession of evenly distributed holes and nitrogen atoms with proper bandgap has been synthesized. Previous calculation studies already have shown that the variance of the orbital interaction, band structure of few-layer C2N-h2D suggests that interlayer coupling does play an important role in its electronic properties. In this point, using first-principles density functional theory calculation, we here explore the effect of porous embedded iron atom and iron substrate on encapsulated few layer C2N-h2D. We show the atomic structures and the corresponding electronic structures of Fe@C2N to elucidate the effect of iron. Finally, this study demonstrates that embedded iron C2N has AA-stacking as most favorable stacked structure in contrast to pure C2N. In addition, iron substrate modifies its encapsulated C2N from semi-metallic states to metallic state.

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COMPOSITION OPERATORS ON THE PRIVALOV SPACES OF THE UNIT BALL OF ℂn

  • UEKI SEI-ICHIRO
    • Journal of the Korean Mathematical Society
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    • v.42 no.1
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    • pp.111-127
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    • 2005
  • Let B and S be the unit ball and the unit sphere in $\mathbb{C}^n$, respectively. Let ${\sigma}$ be the normalized Lebesgue measure on S. Define the Privalov spaces $N^P(B)\;(1\;<\;p\;<\;{\infty})$ by $$N^P(B)\;=\;\{\;f\;{\in}\;H(B) : \sup_{0 where H(B) is the space of all holomorphic functions in B. Let ${\varphi}$ be a holomorphic self-map of B. Let ${\mu}$ denote the pull-back measure ${\sigma}o({\varphi}^{\ast})^{-1}$. In this paper, we prove that the composition operator $C_{\varphi}$ is metrically bounded on $N^P$(B) if and only if ${\mu}(S(\zeta,\delta)){\le}C{\delta}^n$ for some constant C and $C_{\varphi}$ is metrically compact on $N^P(B)$ if and only if ${\mu}(S(\zeta,\delta))=o({\delta}^n)$ as ${\delta}\;{\downarrow}\;0$ uniformly in ${\zeta}\;\in\;S. Our results are an analogous results for Mac Cluer's Carleson-measure criterion for the boundedness or compactness of $C_{\varphi}$ on the Hardy spaces $H^P(B)$.

The Complexes of Iodine with Ortho-Substituted Anilines in Carbon Tetrachloride (오르토 치환 아닐린과 요오드 사이의 착물에 관한 연구)

  • Bu Yong Lee;Sang Up Choi
    • Journal of the Korean Chemical Society
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    • v.15 no.6
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    • pp.312-317
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    • 1971
  • The interactions of aniline, o-toluidine, o-ethylaniline and o-chloroaniline with iodine in carbon tetrachloride solution have been examined through spectrophotometric measurements. The results indicate that both aniline and the o-substituted anilines examined form one-to-one complexes with I2in solution. The formation constants of the complexes measured at room temperature are 12.8, 9.31, 3.15 and 0.576 l $mole^{-1}$, respectively. Comparison of these results with previous experimental results indicates that the relative stabilities of the $I_2$-amine complexes decrease in the following order: $C_6H_5N(C_2H_5)_2 >C_6H_5N(CH_3)_2 >C_6H_5NH_2 >o-CH_3C_6H_4NH_2 >o-C_2H_5C_6H_4NH_2 >o-ClC_6H_4NH_2$. This may support the conclusion that the relative stabilities of these complexes are explained by the inductive effect and steric hindrance of the substituents.

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Two-dimensional Zinc Coordination Polymer Based Paddle-Wheel Type Secondary Building Units of $Zn_2(CO_2R)_4$: [Zn(ATP)(DMF)] $(ATP=2-aminoterephthalate,\;H_2N-C_6H_3-1,4-(COO)_2;\;DMF\;=\;N,\;N-dimethylformamide)$ (Paddle-wheel유형의 2차 쌓음 단위 $Zn_2(CO_2R)_4$에 기초한 2차원 아연 배위 고분자: [Zn(ATP)(DMF)] $(ATP=2-aminoterephthalate,\;H_2N-C_6H_3-1,4-(COO)_2;\;DMF\;=\;N,\;N-dimethylformamide)$)

  • Min Dongwon;Lee Hee K.;Lee Soon W.
    • Korean Journal of Crystallography
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    • v.15 no.2
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    • pp.78-82
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    • 2004
  • The solvothermal reaction of zinc(H) nitrate $(Zn(NO_3)_2\;{\cdot}\;6H_2O)$ with $ATP(2-aminoterephthalate,\;H_2N-C_6H_3-1,4-(COO)_2)$ in a mixture of solvents of DMF and ethanol, in the presence of benzene, gave a 2 dimensional zinc polymer [Zn(ATP) (DMF)] (1). X-ray structure determination revealed that two zinc metals and four ATP ligands form the paddle-wheel SBUs, which are linked by the ATP ligands to give a 2-D square-grid network. Each square grid has approximate dimensions of $11.1\times11.1\;{\AA}$ based on Zn metals. Benzene was required to produce high-quality crystals of polymer 1.