• Journal of Life Science
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• v.8 no.5
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• pp.509-519
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• 1998

The effect of N-Nitrosodimethylamine(NDMA) on the glycoconjugates of rat lingual salivary gland was examined by prelectin histochemical methods. Sprague-Dawley rats weighing about 250-300g were divided into control and experimental groups. Each rat of experimental groups was administrated NDMA(17mg/kg) orally and sacrificed in 3, 6, 12, 24, 48, 72, 96 and 120 hours after NDMA administration. The regional differences and change of glycoco-njugates were elucidated by prelectin histochemical methods, such as periodic acid Schiff's(PAS) reaction, alcian blue (AB) pH 2.5, AB pH 0.4, AB pH 2.5-PAS, aldehyde fuchsin(AF) pH 1.7-AB pH 2.5 and high iron diamine(HID)-AB pH 2.5 staining. The major morphological changes in the von Ebner’s gland of NDMA administrated groups were withering and des-truction of serous acini, diminution and disappearance of cytoplasmic granules and vacuolation in cytoplasm of serous cells, and mucinous changes of duct epithelial cells. These changes were noted in NDMA administrated groups for 12 to 72 hours. In the lingual mucous gland of NDMA administrated groups, the major morphological changes were enlargement, fusion and destruction of mucous acini, loss of cytoplasmic granules and vacuolated generation in cytop-lasm of mucous cells, and mucinous change of duct epithelial cells. These changes were severe in NDMA administra-ted groups for 12 to 72 hours. In NDMA administrated groups of lingual von Ebner's gland for 12 and 72 hours, the neutral glycoconjugates be-come diminished remarkably compared to the control group. The decreased amount of neutral glycoconjugates tended to be gradually recovered from 96 hours group. The acidic glycoconjugates which were not detected in control group were found in a few serous cells of these gland of NDMA administrated groups for 6 to 48 hours and 120 ho-urs. The remarkable decrease of neutral and acidic glycoconjugates was observed in the lingual mucous glands 3, 24 and 48 hours after NDMA administration, and the striking decrease of acidic glycoconjugates was found in 72 hours groups. Among acidic glycoconjugates, sulfated glycoconjugates tended to decrease in NDMA administrated groups for 72 hours, while sialic glycoconjugates were increased in NDMA administrated groups for 3, 12 and 48 hours.

• Journal of Navigation and Port Research
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• v.29 no.6 s.102
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• pp.481-485
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• 2005

The port entry system of the inner harbor in Pyeongtaek${\cdot}$Dangjin was planned as lock-gate in 'Master plan project on port planning in Asan industry base(1990)‘, but was changed to tidal harbor in 'Project maintaining Master plan for comprehensive development of Pyeongtaek${\cdot}$Dangjin port(2001)'. Accordingly, southern sea bank constructed under the lower part of Seohae-bridge will be removed so that inbound/outbound vessels for the inner harbor can navigate at all times. However, in the view of the safety on passing through the lower of Seohae-bridge, navigating conditions for the inner harbor will be restricted in the single-way of 50,000 DWT vessel and the two-way of vessel less than 30,000 DWT Therefore, this study carried out the estimation of traffic congestion arising from these vessels with above restrictions q[ter supposing annual inbound/outbound vessel's numbers for loading and unloading cargo surveyed on the inner harbor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.29 no.1
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• pp.191-195
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• 2005

The port entry system of the inner harbor in Pyeongtaek (Asan) was planned as lock-gate in 'Master plan project on port planning in Asan industry base(1990)', but was changed to tidal harbor in 'Project maintaining Master Plan for comprehensive development of Pyeongtaek (Asan) port(2001)'. Accordingly, southern sea bank constructed under the lower part of Seohae-bridge will be removed so that inbound/outbound vessels for the inner harbor can navigate at all times. However, in the view of the safety on passing through the lower of Seohae-bridge, navigating conditions for the inner harbor will be restricted in the single-way of 50,000 DWT vessel and the two-day of vessel less than 30,000 DWT. Therefore, this study carried out the estimation of traffic congestion arising from these vessels with above restrictions after supposing annual inbound/outboubd vessel's numbers for loading and unloading cargo surveyed on the inner harbor.

• Animal cells and systems
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• v.6 no.3
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• pp.271-275
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• 2002

Rph1 and Gisl are damage-responsive repressors involved in PHR1 expression. They have two $C_{2}$H/ sub 2/ zinc finger motifs as putative DNA binding domains and N-terminal conserved domain with unknown function. They are also found in the human retinoblastoma binding protein 2 and the mouse jumonji- encoded protein. The repressors are able to bind to A $G_{4}$ sequence within a 39-bp sequence called upstream repressing sequence of PHR1 promoter (UR $S_{PHR1}$) responsible for the damage-response of PHR1. We report here that Rph1 is predominantly localized in the nucleus as examined by fluorescence microscopic analysis with GFP-Rph1 fusion protein. On the basis of the fact that the A $G_{4}$ sequence that is recognized by Rph1 and Gisl is also recognized by Msn2 and Msn4 in a process of stress response, we a1so tried to examine the in vivo function of A $G_{4}$ and the role of Msn2 and Msn4 in PHR1 expression. Our results demonstrate that Msn2 and Msn4 are actually required for the basal transcription of PHR1 expression but not for its damage induction. When A $G_{4}$ sequence was inserted into the minimal promoter of the cyc1-LacZ reporter, the increased LacZ expression was observed indicating its involvement in transcriptional activation. The data suggest that the A $G_{4}$ is primarily required for basal transcriptional activation of PHR1 or CYC1 promoter through the possible involvement of Msn2 and Msn4. However, since the A $G_{4}$ is also involved in the repression of PHR1 via Rphl and Gisl, it is proposed that A $G_{4}$ functions as either URS or upstream activating sequence (UAS) depending on the promoter context.t.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.599-602
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• 2005

In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.380-380
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• 2013

본 논문에서는 외기 환경 요인 중에서 H2O와 O2의 영향으로 성능이 저하되는 유기박막트랜지스터(OTFT)의 수명시간 향상을 위하여 필요한 passivation layer의 효과에 대하여 알아 보았다. OTFT에 기존의 액상 공정이나 증착 공정으로 단일 passivation layer또는 다층 passivation layer를 형성하는 방식과는 다르게 향후에 산업 전반에 적용이 기대되는 것을 고려하여 제작 공정의 간편성을 위하여 film 형태로 되어 있는 열경화성 epoxy resin film으로 passivation layer를 구현하는 방법을 사용하여 OTFT의 storage stability를 평가하였다. passivation layer가 없는 OTFT와 열경화성 epoxy resin film으로 passivation된 OTFT의 전기적 특성이 서로 비교 평가되었으며 또한 30일 동안 온도 $25^{\circ}C$ 상대습도 40%의 환경을 갖는 Desicator 안에서 소자를 보관하여 시간에 따른 전기적 특성 변화를 검증하여 epoxy resin film의 passivation layer으로의 적용가능성을 검증하였다. 결과적으로 30일 후의 passivation layer가 없는 OTFT의 전기적 특성은 매우 낮게 떨어진 반면에 epoxy resin film으로 passivation layer가 구현된 OTFT의 mobility는 $0.060cm^2$/Vs, VT는 -0.18 V, on/off ratio는 $3.7{\times}10^3$으로 초기의 소자 특성이 잘 유지되는 결과를 얻었다. OTFT는 Flexible한 polyethersulfone (PES)기판에 게이트 전극이 하부에 있는 Bottom gate 구조로 제작되었고 채널 형성을 위한 유기반도체 재료로 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene이 사용되었고 spin coating된 Poly-4-vinylphenol (PVP)가 게이트 절연체로 사용되었다. 이때 Au전극은 Shadow mask를 이용하여 증착하였다. 또한 OTFT의 채널 길이 $100{\mu}m$, 채널 폭 $300{\mu}m$의 영역에 Drop casting법을 사용하여 채널을 형성하였다. 물리적 특성은 scanning electron microscopy (SEM), scanning probe microscopy (SPM), x-ray diffraction (XRD)를 사용하여 분석하였고, 전기적 특성은 Keithley-4200을 사용하여 추출하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.