• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.471-482
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• 2015

In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.1-8
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• 2007

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• Journal of Korea Society of Digital Industry and Information Management
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• v.4 no.4
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.1-6
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• 2009

We fabricated Gunn diodes with a double heat sink which has anode heat sink as well as cathode heat sink for efficient heat dissipation. We compared the DC characteristics of a double heat sink diode with a conventional cathode heat sink Gunn diode. It was shown that the Gunn diode with a single heat sink has the threshold voltage of 3 V, the peak current of 744 mA and the breakdown voltage of 4.8 V. Also, the Gunn diode with a double heat sink showed the threshold voltage of 2.5 V, the peak current of 778 mA and the breakdown voltage over 5 V.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.45-54
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• 2014

In this paper, We have designed and fabricated 20 InP Gunn diodes using a current limiting epitaxial structure by MINT's optimized fabrication processes. We have also packaged the fabricated InP Gunn diodes using our optimized packaging method, and then designed and fabricated a W-band waveguide FTO to measure characteristics of the packaged InP Gunn diodes. The packaged InP Gunn diode have a ceramic ring, a Au plated stud and a lid, and a Maltese cross. The fabricated InP Gunn diodes have good RF characteristics such as high output powers (11.8~17 dBm) and limiting low currents (less than 400 mA) between 92.9 and 94.78 GHz.

• Journal of the Korea Institute of Military Science and Technology
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• v.8 no.3 s.22
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• pp.64-72
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• 2005

In this paper, we propose a design method of the millimeter-wave(W-Band) waveguide cavity harmonic voltage controlled oscillator(VCO) using a Gunn diode for the armor sensor. Using the 3-dimensional simulation tool(Ansoft $HFSS^{TM}$), we were able to find the impedance matching point between waveguide and Gunn diode and estimate the oscillation frequency. A varactor diode is used for the frequency tuning, and we find out the equation for the calculation of the tunable frequency range. The designed VCO shows good performances; 17dBm output power at 94GHz center frequency, 520MHz frequency tuning range similar to the estimated value(480MHz).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.92-101
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• 2005

In this paper, the Gunn diode mount is experimentally designed for use in a W-band waveguide voltage controlled oscillator(VCO). The role of the Gunn diode mount is to match the low impedance of the Gunn diode to the high impedance of waveguide. Computer simulations of VCO characteristics such as center frequency, frequency tuning range, and output power are carried out for various values of disc diameter, disc height, post diameter, and utilized in the experimental optimization of the Gunn diode mount. The designed VCO shows excellent characteristics; 93.9 GHz center fiequency, 600 MHz frequency tuning range with $2{\%}$ linearity, 16 dBm output power.

• Journal of the Institute of Convergence Signal Processing
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• v.2 no.2
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• pp.75-82
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• 2001

In this paper, a transmitter and a receiver using a Gunn diode and SBD was designed and fabricated in X-band. This system detects Doppler shift signal reflected by moving target through the homodyne detection, which is Doppler radar sensor for the measurement of the velocity of moving target. By the experimental results, the oscillating condition of the transmitter was satisfied at about the half wavelength between the supporting post of the Gunn diode in the waveguide and the waveguide short. And using the fabricated Doppler radar sensor, the velocity measurement deviation of moving target was 1.24%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.4A
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• pp.214-218
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• 2012

In this paper, we reported on a high performance waveguide VCO(voltage controlled oscillator) for FMCW applications. The waveguide VCO consists of a GaAs Gunn diode, a varactor diode, and two bias posts with low pass filter(LPF). The cavity is designed for fundamental mode at 47 GHz and operated at second harmonic of 94 GHz center frequency. The developed waveguide VCO has 1.095 GHz bandwidth, 590 MHz linearity with 1.69% and output power from 14.86 to 15.93 dBm. The phase noise is under -95 dBc/Hz at 1 MHz offset.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1035-1039
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• 2012

In this paper, we developed a 94 GHz waveguide VCO(voltage controlled oscillator) using a GaAs-based Gunn diode and a varactor diode. The cavity is designed for fundamental mode at 47 GHz and operated at second harmonic of 94 GHz. Bias posts for diodes operate as LPF(low pass filter) and resonator. The fabricated waveguide VCO achieves an oscillation bandwidth of 760 MHz. Output power is from 12.61 to 15.26 dBm and phase noise is -101.13 dBc/Hz at 1 MHz offset frequency from the carrier.