• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.582-587
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• 2006

Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.404-408
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• 2003

SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.

• Journal of Electrochemical Science and Technology
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• v.11 no.3
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• pp.291-309
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• 2020

Chromium was electrodeposited from deep eutectic solvents-based Cr³⁺ electrolytes on HB-pencil graphite electrode. Factors influencing the electrochemical behavior and the processes of Cr nucleation and growth were explored using cyclic voltammetry and chronoamperometry techniques, respectively. Cr³⁺ reduction was found to occur through an irreversible diffusion-controlled step followed by another irreversible one of impure diffusional behaviour. The reduction behavior was found to be greatly affected by Cr³⁺ concentration, temperature, and type of hydrogen bond donor used in deep eutectic solvents (DESs) preparation. A more comprehensive model was suggested and successfully applied to extract a consistent data relevant to Cr nucleation kinetics from the experimental current density transients. The potential, the temperature, and the hydrogen bond donor type were estimated to be critical factors controlling Cr nucleation. The nucleation and growth processes of Cr from either choline chloride/ethylene glycol (EG-DES) or choline chloride/urea (U-DES) deep eutectic solvents were evaluated at 70℃ to be three-dimensional (3D) instantaneous and diffusion-controlled, respectively. However, the kinetics of Cr nucleation from EG-DES was found to be faster than that from U-DES. Cr nucleation was tending to be instantaneous at higher temperature, potential, and Cr³⁺ concentration. Cr nuclei electrodeposited from EG-DES were characterized at different conditions using scanning electron microscope (SEM). SEM images show that high number density of fine spherical nuclei of almost same sizes was nearly obtained at higher temperature and more negative potential. Energy dispersive spectroscopy (EDS) analysis confirms that Cr deposits were obtained.

• Journal of Biosystems Engineering
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• v.34 no.3
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• pp.190-196
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• 2009

The temperature of root zone is known as an important factor for the growth of crops and reduction of energy in greenhouse. The purpose of this study was to design the solar energy supply system to keep the optimum condition of root zone by soil warming. As a result of this study, soil warming compared with no warming changed on a large scale temperature rise effect by depth of soil. The greenhouse's inner temperature have an effect on the temperature of surface up to 15 cm, rised to about 1 hour after warming. In case of the temperature fluctuation, soil temperature was about $12^{\circ}C$ up to 15${\sim}$25 cm and it was $13.4^{\circ}C$ at greater depths. This results showed that the position of root zone was very different after 3 weeks of growth.

• Journal of Bio-Environment Control
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• v.21 no.1
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• pp.33-38
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• 2012

Growth response of 'Sambokkul' watermelon grafted onto different rootstocks including 4 $Citrullus$ rootstocks and 3 other cucurbitaceous rootstocks was evaluated at two different temperature regimes. Significant reduction in plant growth rate was observed in plants grown at low temperatures (LT) as compared to those grown at normal or optimal temperatures. Relative growth reduction were 40~47% for vine length, 39~51% for total leaf area, 38~59% for shoot fresh weight, and 57~87% for plant dry weight, respectively. Watermelon rootstock PI 482322 showed comparable plant growth as the most popular rootstock 'Shintozwa' even at LT. 'Sambokkul' watermelon grafted onto watermelon hybrids, 'PI 271969 ${\times}$ PI 296341' and 'PI 271769 ${\times}$ Calhoun Gray', showed comparable plant growth as 'FR Dantos' bottle gourd rootstock. Index of growth ability at LT, which was calculated on the basis of reduced rate of vine length, dry weight and leaf area, was significantly high in $C.$ $martinezii$, 'Shintozwa', PI 482322, and 'PI 271769 ${\times}$ PI 296341' rootstocks (50% or higher) and low in own-rooted 'Sambokkul' or in watermelon plants on 'Knight' rootstock. Watermelon hybrids, 'PI 271969 ${\times}$ PI 296341' and 'PI 271769 ${\times}$ Calhoun Gray', showed better or at least comparable growth at low temperatures as compared to 'FR Dantos', confirming the feasibility of using watermelon rootstocks even in low temperature conditions.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.51-67
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• 1999

The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.65 no.4
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• pp.339-345
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• 2020

Recently, abnormal weather conditions, such as extreme high temperatures and droughts, have increased in frequency due to climate change, there has accordingly been growing concern regarding the detrimental effects on field crop, including soybean. Therefore, this study was conducted to examine the effects of increased temperatures on soybean growth and yield using a temperature gradient chamber (TGC). Two major types of soybean cultivar, a medium- seed cultivar such as Daepung-2 and a large-seed cultivar such as Daechan, were used and four temperature treatments, aT+1℃ (ambient temperature+1℃), aT+2℃ (ambient temperature+2℃), aT+3℃ (ambient temperature+3℃) and aT+4℃ (ambient temperature+4℃) were established to examine the growth response and seed yield of each cultivar. Seed yield showed a higher correlation with seed weight (r=0.713***) and an increase in temperature affected seed yield by reducing the single seed weight. In particular, the seed growth rate of the large-seed cultivar (Daechan) increased at high temperature, resulting in a reduction in the number of days for full maturity. Our results accordingly indicate that large-seed cultivar, such as Daechan, is potentially vulnerable to high temperature stress. The results of this study can be used as basic data in the development of cultivation technology to reduce the damage caused by elevated temperatures. Also, further research is required to evaluate the response of each process contributing to seed yield production under high temperatures.

• Applied Science and Convergence Technology
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• v.24 no.1
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• pp.22-26
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• 2015

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.360-364
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• 1999

The growth of crystals with high melting point$t_{fus}$$\geq$$1600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with$t_{fus}$$1600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, many oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure${po}_{2}$. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and wasy to forecast theri behavior under growth conditions.