• Journal of Ocean Engineering and Technology
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• v.14 no.4
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• pp.73-78
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• 2000

Presented are the estimation of the probability distribution of fatigue crack growth life and reliability assessment of structures by simulating material resistance to fatigue crack growth along a crack path. The material resistance is treated as a Weibull stochastic process. A non-Gaussian stochastic fields simulation method proposed by shimozuka, et al is applied with the statistical data obtained experimentally. Test results are obtained for $\delta K$ constant amplitude load in tension with stress ratio of R=0.2 and three specimen thicknesses of 6,12 and 18mm. This simulation method is useful to estimate the probability distribution of fatigue crack growth life and the smallest life.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.10a
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• pp.90-94
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• 2002

In this paper, Compression in the case where dissimilar blocks are twinned variously are carried out in the condition of lubricated interface. The degree of growth is experimentally investigated. Moreover, numerical simulations are carried out by the elastic-plastic FEM for the case of the dissimilar blocks with the initial sawtooth angle of 60。. The dissimilar blocks are twinned, larger difference between material properties leads smaller growth, and the degreased interface leads smaller growth than that in the lubricated one. Furthermore, by the simulation of compression where dissimilar blocks are twinned, it is confirmed that the tendency of the general deformation pattern is very similar to the experiment.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.70-71
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• 2006

Growth behavior and kinetics of grains in a liquid matrix has been studied by computer simulation for various physical and processing conditions. The kinetics of growing and dissolving grains were considered to follow those of single crystals in a matrix. Depending on the shape of crystals, rounded or faceted, different kinetic equations were adopted for growing grains and an identical equation for dissolving grains. Effects of such critical parameters as step free energy, temperature, and liquid volume fraction were evaluated.

• Journal of the Korea Institute of Military Science and Technology
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• v.23 no.2
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• pp.168-175
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• 2020

Failure of essential avionic equipments have a significant impact on the operations and safety of P-3 maritime patrol aircraft. Therefore, avionic equipments of P-3 are required to have higher reliability. Based on the field failure data, this paper studies the reliability growth of essential avionic equipments in P-3 using Duane model. Additionally, a simulation model is built and implemented for identifying the operational availability according to the field failure data of avionic equipments.

• Proceedings of the Korean Society of Crop Science Conference
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• 2004.04a
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• pp.100-101
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• 2004

[ $\bigcirc$ ] In the growth simulation using genetic coefficients calculated with fooled data under various condition, WAGT was not higher and LAI, WLVG, WSO were higher, but WST was similar before grain-filling stage after the became lower because of higher translocation of carbohydrates than in the growth simulation using genetic coefficients calculated with data under high nitrogen applicated condition. $\bigcirc$ Genetic coefficients should be calculated with data showing potential in ORYZA2000, but under 180 kg and 240 kg N condition in 2003, plants were infected by panicle blast and also yield was not higher than under 120 kg N condition showing not potential condition and therefore not appropriate for genetic coefficients estimation compared with pooled data from various condition.

• Proceedings of the Korean Society of Crop Science Conference
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• 2004.04a
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• pp.104-105
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• 2004

[ $\bigcirc$ ] In the phenology model of ORYZA2000, the effect of photoperiod on the developmental rate was a little ignored because most crop parameters were measured with IRRI varieties which are insensitive to photoperiod, therefore it is very difficult to apply this phenology model directly to Korean varieties which are usually sensitive to photoperiod. $\bigcirc$ After introducing PPFAC and PPSE to improve the phenology model, the precision of heading date prediction was improved but not satisfied. $\bigcirc$ In the growth simulation using data from several regions, yield tended to be overestimated under high nitrogen applicated condition. $\bigcirc$ The precision of yield was much improved by introducing nitrogen use efficiency, but still different between regions because of different soil fertility or property of irrigation water between regions

• The Plant Pathology Journal
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• v.15 no.4
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• pp.210-216
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• 1999

TREGRO, a computer simulation model of individual tree growth, was applied to estimate ozone ($\textrm{O}_3$) effects on aspen(Populus tremuloides) growth under ambient and 1.7 times ambient $\textrm{O}_3$ of Seoul in 1996. The three highest $\textrm{O}_3$ (Kuui-dong, Ssangmun-dong, Sungsoo-dong) and the two lowest $\textrm{O}_3$ sites (Mapo-dong, Namgajwa-dong) were evaluated. The current ambient $\textrm{O}_3$ did not affect aspen growth compared to simulation without $\textrm{O}_3$. The only effect was 6.6 percent of total assimilated carbonloss at Ssangmun-dong where the level of $\textrm{O}_3$ was greatest among the 21 sites examined. Decrease as much as 50 percent of total carbon gain was calculated at 1.7 times ambient $\textrm{O}_3$ of the three highest sites. The carbon loss by $\textrm{O}_3$ came from biomass of tissues and total nonstructural cabron (TNC) such as starch and sugar. The most sensitive fraction was TNC and the next was root biomass. Foliage mass was not affected by $\textrm{O}_3$. Structural biomass loss was at best 1 to 3 percent at 1.7 times ambient $\textrm{O}_3$ at the two lowest sites. The daily carbon simulation was affected by $\textrm{O}_3$ mainly during Growth Period 4 (Jul. 21-Oct. 26). Correlations between site, dose, and the simulated responses of aspen (tissue biomass, TNC, respiration, and senescence) ranged from -0.703 to -0.973 depending on the plant responses. The ozone effects on poplar in Seoul are not severe currently, but are probably measurable at Ssangmun-dong. However, severe $\textrm{O}_3$ effects on biomass would occur if $\textrm{O}_3$ levels increase to 1.7 times ambient $\textrm{O}_3$ in Seoul. In addition, v could weaken the trees thus increasing susceptibility to pathogens or insects.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.410-420
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• 2006

The dynamic effects, such as the steering and the screening effects during deposition on an epitaxial growth is studied by kinetic Monte Carlo simulation. In the simulation, we incorporates molecular dynamic simulation to rigorously take the interaction of the deposited atom with the substrate atoms into account, We find three characteristic features of the surface morphology developed by grazing angle deposition: (1) enhanced surface roughness, (2) asymmetric mound, and (3) asymmetric slopes of mound sides, Regarding their dependence on both deposition angle and substrate temperature, a reasonable agreement of the simulated results with the previous experimental ones is found. The characteristic growth features by grazing angle deposition are mainly caused by the inhomogeneous deposition flux due to the steering and screening effects, where the steering effects play the major role rather than the screening effects. Newly observed in the present simulation is that the side of mound in each direction is composed of various facets instead of all being in one selected mound angle even if the slope selection is attained, and that the slope selection does not necessarily mean the facet selection.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.388-395
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• 1998

This paper reports on a thermodynamic analysis for the GaN thick film growth by vapor phase epitaxy method. The thermodynamic calculation was performed using a chemical stoichiometric algorism. The simulation variables include the growth temperature in a range 400~1500 K, the gas ratios $(GaCl_3)/(GaCl_3+NH_3)$ and $(N_2)/(GaCl_3+NH_3)$. The theoretical calculation predicts that the growth temperature of GaN be in the lower range of 450~750 K than the experimental results. The difference in the growth temperature between the simulation and the experiments indicates that the vapor phase epitaxy of GaN is kinetically limited, presumably, due to the high activation energy of thin film growth.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.