• 대한전자공학회논문지
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• 제27권4호
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• pp.527-533
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• 1990

Zone-melting recrystallization (ZMR) system using two graphite heaters(a stationary sheet and a narrow movable bar) was constructed and implemented in recrystallization op Si films on insulating layers. The recystallized Si films were examined by Nomarski contrast optical microscopy after Dash etching, transmission electron diffraction pattern, and x-ray diffraction. With optimum conditions of process parameters(input powers of the bottom and upper heater, scanning speed of the upper heater, and the gap between sample and upper heater), the recrystallized Si layer has a (100) texture, but contains many subboundaries. The subgrains are misoriented by < 0.5\ulcorner and the average spacing between subboundaries is about 25\ulcorner.

• 한국세라믹학회지
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• 제32권9호
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• pp.1027-1032
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• 1995

SiC had been widely applied for mechanical sealing as a sealing material. SiC sintering is commonly made of reaction sintering, presureless sintering, and hot isostatic pressing (HIP) sintering. In this investigation, however, clay bonded sintering was used to avoide any complications of the special sintering methods as mentioned above. In order to prevent harmful SiC oxidation in the clay bonded sintering, clay and frit were used to form the SiC oxidation protecting layer and graphite was added to provide high solid lubricity. As a result, the material with 6% clay (clay 5.4% and frit 0.6%) and 2~4% graphite (45 mesh) sintered at 140$0^{\circ}C$ for 3 hours, showed the following physical properties; porosity 6%, static friction coefficient 0.15, kinematic coefficient 0.1,. and specific wear rate 4.8$\times$10-8 $\textrm{mm}^2$kgf-1. On the other hand, the flexural strength was 900kgf/$\textrm{cm}^2$. This tribological characteristic properties were similar to those of the reaction sintered SiC except the flexural strength.

• Nuclear Engineering and Technology
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• 제52권6호
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• pp.1243-1251
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• 2020

Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He⁺ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• 한국세라믹학회지
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• 제31권3호
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.

• Journal of Mechanical Science and Technology
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• 제14권8호
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• pp.823-829
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• 2000

[ $Nb/MoSi_2$ ]laminate composites have been successfully fabricated by hot pressing in a graphite mould. Lamination of Nb foil and $MoSi_2$ layer showed a sufficient improvement in the absorbed impact energy compared to that of monolithic $MoSi_2$ material. The impact value of $Nb/MoSi_2$ laminate composites obviously is reduced when sintered at temperatures higher than 1523K, even if the composite density contributing to impact load increased along with fabricating temperatures. Impact value of laminate composites was also drastically decreased with the growth of reaction layer after the heat treatment. However, it was effective to increase the pressure at the same sintering temperature for the improvement of the impact value.

• 한국항해학회지
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• 제19권4호
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• pp.83-92
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• 1995

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${\pm}0.006^{\circ}C$ at $800^{\circ}C$, temperature uniformity for graphite boat around was within ${\pm}0.15^{\circ}C$ at $650^{\circ}C$, and cooling rate was controllable from $2.2^{\circ}C$/min to $0.05^{\circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• 한국표면공학회지
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• 제52권6호
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• 한국결정성장학회지
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• 제32권3호
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• pp.89-95
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• 2022

본 연구에서는 페놀수지를 사용하여 흑연표면에 유리질 카본 코팅을 진행하였다. 코팅액은 균일한 표면을 가지는 유리질 카본 코팅층 형성을 위해 페놀수지와 경화제, 희석제, 첨가제 등을 혼합하였다. 코팅된 페놀수지는 25~60℃에서 건조 100~200℃에서 경화 500~1,500℃에서 열처리하여 유리질 카본으로 전환하였다. 유리질 카본의 특성 분석을 위해 FTIR, XRD, SEM 분석, 밀도/기공율/접촉각 측정을 진행하였다. 유리질 카본 형성에 있어 최적 온도는 약 1,000℃로 확인되었다. 그리고 첨가제의 함량이 높아질수록 코팅 표면의 결함감소, 기공율 감소, 접촉각 증가, 밀도 증가 등의 효과를 보였다. 첨가제를 통한 유리질 카본 코팅층 형성 방법은 흑연 코팅 및 다른 분야에 적용이 가능할 것으로 기대된다.