• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1027-1032
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• 1995

SiC had been widely applied for mechanical sealing as a sealing material. SiC sintering is commonly made of reaction sintering, presureless sintering, and hot isostatic pressing (HIP) sintering. In this investigation, however, clay bonded sintering was used to avoide any complications of the special sintering methods as mentioned above. In order to prevent harmful SiC oxidation in the clay bonded sintering, clay and frit were used to form the SiC oxidation protecting layer and graphite was added to provide high solid lubricity. As a result, the material with 6% clay (clay 5.4% and frit 0.6%) and 2~4% graphite (45 mesh) sintered at 140$0^{\circ}C$ for 3 hours, showed the following physical properties; porosity 6%, static friction coefficient 0.15, kinematic coefficient 0.1,. and specific wear rate 4.8$\times$10-8 $\textrm{mm}^2$kgf-1. On the other hand, the flexural strength was 900kgf/$\textrm{cm}^2$. This tribological characteristic properties were similar to those of the reaction sintered SiC except the flexural strength.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1243-1251
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• 2020

Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He⁺ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.

• Journal of Mechanical Science and Technology
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• v.14 no.8
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• pp.823-829
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• 2000

[ $Nb/MoSi_2$ ]laminate composites have been successfully fabricated by hot pressing in a graphite mould. Lamination of Nb foil and $MoSi_2$ layer showed a sufficient improvement in the absorbed impact energy compared to that of monolithic $MoSi_2$ material. The impact value of $Nb/MoSi_2$ laminate composites obviously is reduced when sintered at temperatures higher than 1523K, even if the composite density contributing to impact load increased along with fabricating temperatures. Impact value of laminate composites was also drastically decreased with the growth of reaction layer after the heat treatment. However, it was effective to increase the pressure at the same sintering temperature for the improvement of the impact value.

• Journal of the Korean Institute of Navigation
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• v.19 no.4
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• pp.83-92
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• 1995

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${\pm}0.006^{\circ}C$ at $800^{\circ}C$, temperature uniformity for graphite boat around was within ${\pm}0.15^{\circ}C$ at $650^{\circ}C$, and cooling rate was controllable from $2.2^{\circ}C$/min to $0.05^{\circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.89-95
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• 2022

In this study, glassy carbon coating was performed on the graphite using a phenolic resin and a curing agent was mixed with ethylene glycol as an additive to form the uniform surface. The phenolic resin was dried and cured under the environments of hot air, then converted into a glassy carbon layer by pyrolysis at 500~1,500℃. FTIR, XRD, SEM analysis, and density/porosity/contact angle measurement were performed for characterization of glassy carbon. The pyrolysis temperature for high-quality glassy carbon was optimized to be about 1,000℃. As the content of the additive increased, the effect of reducing surface defects on the coated surface, reduction of porosity, increase of contact angle, and increase of density were investigated in this study. The method of forming a glassy carbon coating layer through an additive is expected to be applicable to graphite coating and other fields.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.25-29
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• 1998

Sliding wear test and surface characterization techniques such as micro-Raman spectroscopy were employed to determine the effect of whisker content and orientation on the friction and wear behavior of SiC whisker reinforced alumina. Composites containing unidirectionally oriented whiskers were fabricated by novel technique Addition of SiC whiskers up to 20 vol.% lowered the friction and improved wear resistance. The results of this study indicated that highly disordered graphite and size of the layer behind the whiskers were responsible for variation of wear rate and friction coefficient.