• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.256-259
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• 2013

We investigate co-doping effects of conjugated P-N B-N with increasing of N concentration in the graphene sheets using a first principles based on the density functional theory. N doping sites of the graphene consider two possible sites (pyridinic and porphyrin-like). Energy calculation shows that additional doping of B atom in the porphyrin-like N doped graphene ($V+B-N_x$) is hard to form. At the low chemical potential of N, one N atom with additional doping in the graphene ($V+P-N_1$, $P/B-N_1$) has low formation energy on the other hand at high chemical potential of N, high concentration of N ($V+P-N_4$, $P/B-N_3$) in the graphene is governing conformation. From the results of electronic band structure calculation, it is found that $V+P-N_4$ and $P/B-N_3$ cases change the Fermi energy therefore type change is occurred. On the other hand, the cases of $V+P-N_1$ and N+B recover the electronic structure of pristine graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.485-487
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• 2014

Nitrogen이 도핑된 graphene에서의 hydrogen evolution에 대한 촉매효과에 대해서 연구를 진행하였다. Reaction free energy를 계산하기 위해서 많은 N-doped graphene 모델을 계산하였으며 pH 조건, silicon cathode의 영향 그리고 zero point energy의 효과를 고려하였다. Volcano plot에 의하면 "pyrol" like model과 N-doped armchair graphene model (aGNR-N1)이 좋은 촉매효과를 가짐을 밝혔다. 또한 free energy diagram을 통하여 "pyrol"과 "aGNR-N1"이 좋은 active site가 될 수 있음을 확인하였고 pH가 증가함에 따라 $H^+$의 에너지가 증가함에 따라 촉매 효과가 줄어듬을 확인하였다.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.257-266
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• 2018

Here, a controlled green synthesis route involving hydrothermal pre-carbonization cum pyrolysis is reported that converts cucumber into graphene-like carbon nanosheets for supercapacitor application. Transmission electron microscopy analysis reveals the formation of ultra-thin carbon nanosheets with distributed pores. This cucumber derived carbon exhibits high specific capacitance of $143F\;g^{-1}$ in aqueous electrolyte. The two-electrode symmetric cell exhibits a specific capacitance of $58F\;g^{-1}$ at high current density, and high capacitance retention of 97% after 1000 cycles. This simple low-cost process involving widely available cucumber as biomass precursor is a promising, commercially viable approach for developing high-performance supercapacitors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.612-612
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Carbon letters
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• v.13 no.2
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• pp.130-132
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• 2012

In this study, cobalt oxide ($Co_3O_4$)/graphene composites were synthesized through a simple chemical method at various calcination temperatures. We controlled the crystallinity, particle size and morphology of cobalt oxide on graphene materials by changing the annealing temperatures (200, 300, $400^{\circ}C$). The nanostructured $Co_3O_4$/graphene hybrid materials were studied to measure the electrochemical performance through cyclic voltammetry. The $Co_3O_4$/graphene sample obtained at $200^{\circ}C$ showed the highest capacitance of 396 $Fg^{-1}$ at 5 $mVs^{-1}$. The morphological structures of composites were also examined by scanning electron microscopy and transmission electron microscopy (TEM). Annealing $Co_3O_4$/graphene samples in air at different temperatures significantly changed the morphology of the composites. The flower-like cobalt oxides with higher crystallinity and larger particle size were generated on graphene according to the increase of calcination temperature. A TEM analysis of the composites at $200^{\circ}C$ revealed that nanoscale $Co_3O_4$ (~7 nm) particles were deposited on the surface of the graphene. The improved electrochemical performance was attributed to a combination effect of graphene and pseudocapacitive effect of $Co_3O_4$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.647-647
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.56-60
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• 2014

The polyimide composite membranes were prepared with polyimide composite solutions including graphenes by using the phase inversion method. The morphologies of these membranes were significantly changed according to the graphene loadings in composite solutions and the solvent systems of the composite solutions. The finger-like macro-voids were formed in the hollow fiber membranes which were prepared in the NMP solvent system with a small amount of ethanol. As increasing the content of the viscous alcohols such as glycerol or 1,3-propanediol in the composite solution, however, the morphologies of the hollow fiber membranes were changed to sponge-like types. In case of flat membranes, the increase of graphene content in polyimide composites causes that their membranes change from the finger-like macro-porous to sponge-like morphologies.