• 제목/요약/키워드: Graphene-Metal contact

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Nonlinear low-velocity impact response of graphene platelets reinforced metal foams doubly curved shells

  • Hao-Xuan Ding;Yi-Wen Zhang;Yin-Ping Li;Gui-Lin She
    • Steel and Composite Structures
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    • 제49권3호
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    • pp.281-291
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    • 2023
  • Due to the fact that the nonlinear low-velocity impact response of graphene platelets reinforced metal foams (GPLRMF) doubly curved shells have not been investigated in the existing works, this paper aims to solve this issue. Using Reddy's high-order shear deformation theory (HSDT), the nonlinear governing equations of GPLRMF doubly curved shells are obtained by Euler-Lagrange method, discretized by Galerkin principle, and solved by the fourth-order Runge-Kutta method to obtain the impact force and central deflection. The nonlinear Hertz contact law is applied to determine the contact force. Finally, the impacts of graphene platelets (GPLs) distribution pattern, porosity distribution form, porosity coefficient, damping coefficient, impact parameters (radius and initial velocity), GPLs weight fraction, pre-stressing force and different shell types on the low-velocity impact curves are analyzed. It can be found that, among the four shell structures, the impact resistance of spherical shell is the best, while that of cylindrical shell is the worst.

Schottky Barrier Free Contacts in Graphene/MoS2 Field-Effect-Transistor

  • Qiu, Dongri;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.209.2-209.2
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    • 2015
  • Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

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하이드라진으로 환원시킨 그래핀을 코팅한 오스테나이트와 마르텐사이트 스테인리스 강 고체고분자형 연료전지 금속 분리판의 전기화학적 특성 평가 (Evaluation of Electrochemical Characteristics on Graphene Coated Austenitic and Martensitic Stainless Steels for Metallic Bipolar Plates in PEMFC Fabricated with Hydrazine Reduction Methods)

  • 차성윤;이재봉
    • Corrosion Science and Technology
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    • 제15권2호
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    • pp.92-107
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    • 2016
  • Graphene was coated on austenitic and martensitic stainless steels to simulate the metallic bipolar plate of proton exchange membrane fuel cell (PEMFC). Graphene oxide (GO) was synthesized and was reduced to reduced graphene oxide (rGO) via a hydrazine process. rGO was confirmed by FE-SEM, Raman spectroscopy and XPS. Interfacial contact resistance (ICR) between the bipolar plate and the gas diffusion layer (GDL) was measured to confirm the electrical conductivity. Both ICR and corrosion current density decreased on graphene coated stainless steels. Corrosion resistance was also improved with immersion time in cathodic environments and satisfied the criteria of the Department of Energy (DOE), USA. The total concentrations of metal ions dissolved from graphene coated stainless steels were reduced. Furthermore hydrophobicity was improved by increasing the contact angle.

A State-of-the-Art Review of Graphene-Based Corrosion Resistant Coatings for Metal Protection

  • Zade, Ganesh S.;Patil, Kiran D.
    • Corrosion Science and Technology
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    • 제21권5호
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    • pp.390-411
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    • 2022
  • Any design engineer or coating formulator's primary objective is to protect metals. Large investments in terms of money, time, labour, and other resources are necessary for constructing large-scale machinery and structures. In terms of economy, the structure's lifespan should be as long as feasible to create revenue. It is becoming essential to protect metal substrates from corrosion to prolong the lifespan of such huge structures. One of the most exciting, durable, useful, and effective methods to protect metals from corrosion is the application of corrosion-resistant coating. Graphene is a novel material with a wide range of applications because of its extraordinary features. The use of graphene in coating creates an obstacle and complicates the path for corrosive medium to reach the metal. As the path to the metal elongates, the corrosion medium takes longer to reach the metal. Thus, metal corrosion can be avoided. In this paper, the importance of graphene in coating formulation is discussed, including chemical modifications of graphene, the effect of graphene concentration on corrosion inhibition, and the contact angle of coating. This review also highlights the significance of water-based corrosion-resistant coating for preventing environmental damage.

A Computational Study for Designing Electrical Contacts to MoS2 Monolayers

  • 김휘수;하현우
    • EDISON SW 활용 경진대회 논문집
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    • 제3회(2014년)
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    • pp.478-482
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    • 2014
  • Graphene have renewed considerable interest in inorganic, two-dimensional materials for future electronics. However, graphene does not have a bandgap, it is limited to apply directly to transistors and logic devices. Hence, other layered materials such as molybdenum disulphide ($MoS_2$) have been investigated to address this challenge. Here, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of $MoS_2$/metal contacts, we perform density functional theory electronic structure calculations based on linear combination of atomic for the geometry, bonding, binding energy, PDOS, LDOS and electronic structure. We choose Au as a contact metal because it is the most common contact metal. In this paper, we demonstrate $MoS_2$/Au contacts have a more promising potential in flexible nanoelectronics than $MoS_2$ itself.

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Nanocomposites for microelectronic packaging

  • 이상현
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.99.1-99.1
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    • 2016
  • The materials for an electronic packaging provide diverse important functions including electrical contact to transfer signals from devices, isolation to protect from the environment and a path for heat conduction away from the devices. The packaging materials composed of metals, ceramics, polymers or combinations are crucial to the device operating properly and reliably. The demand of effective charge and heat transfer continuous to be challenge for the high-speed and high-power devices. Nanomaterials including graphene, carbon nanotube and boron nitride, have been designed for the purpose of exploiting the high thermal, electrical and mechanical properties by combining in the matrix of metal or polymer. In addition, considering the inherent electrical and surface properties of graphene, it is expected that graphene would be a good candidate for the surface layer of a template in the electroforming process. In this talk, I will present recent our on-going works in nanomaterials for microelectronic packaging: 1) porous graphene/Cu for heat dissipations, 2) carbon-metal composites for interconnects and 3) nanomaterials-epoxy composites as a thermal interface materials for electronic packaging.

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Fabrication of top gate Graphene Transistor with Atomic Layer Deposited $Al_2O_3$

  • ;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.212-212
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    • 2013
  • We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

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Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.642-642
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    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

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Nonlinear dynamic response of axially moving GPLRMF plates with initial geometric imperfection in thermal environment under low-velocity impact

  • G.L. She;J.P. Song
    • Structural Engineering and Mechanics
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    • 제90권4호
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    • pp.357-370
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    • 2024
  • Due to the fact that the mechanism of the effects of temperature and initial geometric imperfection on low-velocity impact problem of axially moving plates is not yet clear, the present paper is to fill the gap. In the present paper, the nonlinear dynamic behavior of axially moving imperfect graphene platelet reinforced metal foams (GPLRMF) plates subjected to lowvelocity impact in thermal environment is analyzed. The equivalent physical parameters of GPLRMF plates are estimated based on the Halpin-Tsai equation and the mixing rule. Combining Kirchhoff plate theory and the modified nonlinear Hertz contact theory, the nonlinear governing equations of GPLRMF plates are derived. Under the condition of simply supported boundary, the nonlinear control equation is discretized with the help of Gallekin method. The correctness of the proposed model is verified by comparison with the existing results. Finally, the time history curves of contact force and transverse center displacement are obtained by using the fourth order Runge-Kutta method. Through detailed parameter research, the effects of graphene platelet (GPL) distribution mode, foam distribution mode, GPL weight fraction, foam coefficient, axial moving speed, prestressing force, temperature changes, damping coefficient, initial geometric defect, radius and initial velocity of the impactor on the nonlinear impact problem are explored. The results indicate that temperature changes and initial geometric imperfections have significant impacts.

유연전자소자를 위한 차세대 유연 투명전극의 개발 동향 (Technology of Flexible Transparent Conductive Electrode for Flexible Electronic Devices)

  • 김주현;천민우;좌성훈
    • 마이크로전자및패키징학회지
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    • 제21권2호
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    • pp.1-11
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    • 2014
  • Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.